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Negative Bias Temperature Instability NBTI in pMOSFETs: Characterization, Modeling PowerPoint PPT Presentation
Negative Bias Temperature Instability NBTI in pMOSFETs: Characterization, Modeling - time. Stress. Extrapolation to operating condition. Operation. Extrapolation to end of life. Lifetime ... Accurate lifetime projection for each technology node ...
time. Stress. Extrapolation to operating condition. Operation. Extrapolation to end of life. Lifetime ... Accurate lifetime projection for each technology node ...
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Multisubband Monte Carlo simulations for pMOSFETs PowerPoint PPT Presentation
Multisubband Monte Carlo simulations for pMOSFETs - Carrier velocity and maximum attainable current IBL ... (far from equilibr. transport) Provide sound interpretation to characterization ...
Carrier velocity and maximum attainable current IBL ... (far from equilibr. transport) Provide sound interpretation to characterization ...
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Substrate Bias Effect on Ge pMOSFETs with and without Halo PowerPoint PPT Presentation
Substrate Bias Effect on Ge pMOSFETs with and without Halo - profile which is much higher than what is obtained. from TSUPREM simulations. ... Sentaurus amorphous (Taurus.MC): 10k ions, 10 sec ...
profile which is much higher than what is obtained. from TSUPREM simulations. ... Sentaurus amorphous (Taurus.MC): 10k ions, 10 sec ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1 Bias-Temperature Stress Measurement Clarification ...
Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: Structure and operation Reading: Chapter 17.1 Bias-Temperature Stress Measurement Clarification ...
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ANNOUNCEMENTS PowerPoint PPT Presentation
ANNOUNCEMENTS - The CMOS inverter (cont'd) CMOS logic gates. The body effect. Reading (Rabaey et al. ... no static power dissipation. Lecture 19, Slide 3. EECS40, Fall 2004 ...
The CMOS inverter (cont'd) CMOS logic gates. The body effect. Reading (Rabaey et al. ... no static power dissipation. Lecture 19, Slide 3. EECS40, Fall 2004 ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture 19 OUTLINE The MOSFET: Structure and operation Qualitative theory of operation Field-effect mobility Body bias effect Reading: Pierret 17.1, 18.3.4; Hu 6.1-6.5
Lecture 19 OUTLINE The MOSFET: Structure and operation Qualitative theory of operation Field-effect mobility Body bias effect Reading: Pierret 17.1, 18.3.4; Hu 6.1-6.5
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Small Feature Reproducibility Measuring, Understanding and Controlling Variability in Sub-quarter micron patterning PowerPoint PPT Presentation
Small Feature Reproducibility Measuring, Understanding and Controlling Variability in Sub-quarter micron patterning - Determine if ion implantation damages have any transient effect on diffusion in Ge. Characterization of Si1-xGex formed with Ge/Si intermixing process ...
Determine if ion implantation damages have any transient effect on diffusion in Ge. Characterization of Si1-xGex formed with Ge/Si intermixing process ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture 17 ANNOUNCEMENTS Wed. discussion section moved (again) to 6-7PM in 293 Cory OUTLINE NMOSFET in ON state (cont d) Body effect Channel-length modulation
Lecture 17 ANNOUNCEMENTS Wed. discussion section moved (again) to 6-7PM in 293 Cory OUTLINE NMOSFET in ON state (cont d) Body effect Channel-length modulation
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Dopant and Self-Diffusion in Silicon and Silicon Germanium PowerPoint PPT Presentation
Dopant and Self-Diffusion in Silicon and Silicon Germanium - Dopant and Self-Diffusion in Silicon and Silicon Germanium Eugene Haller, Hughes Silvestri, and Chris Liao MS&E, UCB and LBNL FLCC Tutorial 4/18/05
Dopant and Self-Diffusion in Silicon and Silicon Germanium Eugene Haller, Hughes Silvestri, and Chris Liao MS&E, UCB and LBNL FLCC Tutorial 4/18/05
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Presentazione di PowerPoint PowerPoint PPT Presentation
Presentazione di PowerPoint - CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments V. Rea,c, L. Gaionib,c, M. Manghisonia,c, L. Rattib,c, V ...
CMOS technologies in the 100 nm range for rad-hard front-end electronics in future collider experiments V. Rea,c, L. Gaionib,c, M. Manghisonia,c, L. Rattib,c, V ...
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Hot Carrier Effects in Deep Submicron CMOS PowerPoint PPT Presentation
Hot Carrier Effects in Deep Submicron CMOS - Hot Carrier Effect in Low temperature. How we can suppress this effect ... Hot-Electron and Hole-Emission Effects in Short n-Channel MOSFET s - KARL R. ...
Hot Carrier Effect in Low temperature. How we can suppress this effect ... Hot-Electron and Hole-Emission Effects in Short n-Channel MOSFET s - KARL R. ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture 17 ANNOUNCEMENTS Wed. discussion section moved (again) to 6-7PM in 293 Cory OUTLINE NMOSFET in ON state (cont d) Body effect Channel-length modulation
Lecture 17 ANNOUNCEMENTS Wed. discussion section moved (again) to 6-7PM in 293 Cory OUTLINE NMOSFET in ON state (cont d) Body effect Channel-length modulation
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OUTLINE PowerPoint PPT Presentation
OUTLINE - One solution is to replace the resistor with an NMOSFET that is always on. ... The output is always connected to VDD or GND in steady state ...
One solution is to replace the resistor with an NMOSFET that is always on. ... The output is always connected to VDD or GND in steady state ...
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Week 14a PowerPoint PPT Presentation
Week 14a - Week 14a Propagation delay of logic gates CMOS (complementary MOS) logic gates Pull-down and pull-up The basic CMOS inverter Current flow and power dissipation in ...
Week 14a Propagation delay of logic gates CMOS (complementary MOS) logic gates Pull-down and pull-up The basic CMOS inverter Current flow and power dissipation in ...
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Lecture 13 Partially Reversible Logic and QuasiAdiabatic Memories PowerPoint PPT Presentation
Lecture 13 Partially Reversible Logic and QuasiAdiabatic Memories - Lecture 13 Partially Reversible Logic and QuasiAdiabatic Memories
Lecture 13 Partially Reversible Logic and QuasiAdiabatic Memories
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Body effect parameter Channel length modulation parameter PMOSFET I-V ... Problem with the Square Law Theory Ignores variation in depletion width with ...
Body effect parameter Channel length modulation parameter PMOSFET I-V ... Problem with the Square Law Theory Ignores variation in depletion width with ...
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3%20%20Process%20and%20Device%20Physics PowerPoint PPT Presentation
3%20%20Process%20and%20Device%20Physics - Title: Author: Vlsisystems Last modified by: Created Date: 3/16/1998 1:46:28 PM Document presentation format:
Title: Author: Vlsisystems Last modified by: Created Date: 3/16/1998 1:46:28 PM Document presentation format:
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Microelectronics PowerPoint PPT Presentation
Microelectronics - Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 McGraw-Hill
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 McGraw-Hill
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ECE 875: Electronic Devices PowerPoint PPT Presentation
ECE 875: Electronic Devices - ECE 875: Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu
ECE 875: Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture 21 OUTLINE The MOSFET (cont d) P-channel MOSFET CMOS inverter analysis Sub-threshold current Small signal model Reading: Pierret 17.3; Hu 6.7, 7.2
Lecture 21 OUTLINE The MOSFET (cont d) P-channel MOSFET CMOS inverter analysis Sub-threshold current Small signal model Reading: Pierret 17.3; Hu 6.7, 7.2
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Note: HW#14 was updated this morning. (There are only 4 problems!) Lecture #42 OUTLINE IC technology MOSFET fabrication process CMOS latch-up Reading: Chapter 4
Note: HW#14 was updated this morning. (There are only 4 problems!) Lecture #42 OUTLINE IC technology MOSFET fabrication process CMOS latch-up Reading: Chapter 4
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Numerical Boltzmann/Spherical Harmonic Device CAD Overview and Goals PowerPoint PPT Presentation
Numerical Boltzmann/Spherical Harmonic Device CAD Overview and Goals - Numerical Boltzmann/Spherical Harmonic Device CAD Overview and Goals Overview: Further develop and apply the Numerical Boltzmann/Spherical Harmonic method of advanced ...
Numerical Boltzmann/Spherical Harmonic Device CAD Overview and Goals Overview: Further develop and apply the Numerical Boltzmann/Spherical Harmonic method of advanced ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Lecture #42 OUTLINE IC technology MOSFET fabrication process CMOS latch-up Reading: Chapter 4 Die photo of Intel Penryn processor (Intel CoreTM2 family)
Lecture #42 OUTLINE IC technology MOSFET fabrication process CMOS latch-up Reading: Chapter 4 Die photo of Intel Penryn processor (Intel CoreTM2 family)
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EGE535 Low Power VLSI Design PowerPoint PPT Presentation
EGE535 Low Power VLSI Design - EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics
EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics
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EECS 40 PowerPoint PPT Presentation
EECS 40 - Depth of Focus Large Dz is desirable. depth of focus Dz : Etching Remove material that you don t want Etching: Ion vs. Wet better etch selectivity better ...
Depth of Focus Large Dz is desirable. depth of focus Dz : Etching Remove material that you don t want Etching: Ion vs. Wet better etch selectivity better ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Velocity saturation limits IDSsat in modern MOSFETS. Simple model: ... projectile-like motion ('ballistic transport') The average velocity of carriers exceeds vsat ...
Velocity saturation limits IDSsat in modern MOSFETS. Simple model: ... projectile-like motion ('ballistic transport') The average velocity of carriers exceeds vsat ...
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Lecture 18 Physical Design and Layout of Diodes and Transistors PowerPoint PPT Presentation
Lecture 18 Physical Design and Layout of Diodes and Transistors - Title: Testing in the Fourth Dimension Author: pagrawal Last modified by: ress Created Date: 11/3/2000 2:09:08 AM Document presentation format: On-screen Show
Title: Testing in the Fourth Dimension Author: pagrawal Last modified by: ress Created Date: 11/3/2000 2:09:08 AM Document presentation format: On-screen Show
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MOS Field-Effect PowerPoint PPT Presentation
MOS Field-Effect - ... with emitter degeneration : Input Resistance Figure 6.49 A CE amplifier with emitter degeneration to determine Avo. ... Known as Inversion Layer .
... with emitter degeneration : Input Resistance Figure 6.49 A CE amplifier with emitter degeneration to determine Avo. ... Known as Inversion Layer .
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Onchip Negative Bias Temperature Instability Sensor using Slew Rate Monitoring Circuitry PowerPoint PPT Presentation
Onchip Negative Bias Temperature Instability Sensor using Slew Rate Monitoring Circuitry - On-chip Negative Bias Temperature Instability Sensor using Slew ... Causes dissociation of Hydrogen. More traps at the interface make the transistor slower ...
On-chip Negative Bias Temperature Instability Sensor using Slew ... Causes dissociation of Hydrogen. More traps at the interface make the transistor slower ...
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Radiation Effects in Strained MOSFET PowerPoint PPT Presentation
Radiation Effects in Strained MOSFET - Radiation Effects in Strained MOSFET
Radiation Effects in Strained MOSFET
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Reliability Degradation Characteristics of PowerPoint PPT Presentation
Reliability Degradation Characteristics of - High-K/metal gate stacks will be required in sub 45nm nodes technology. ... Two mechanisms were proposed for TDDB. Interfacial layer initiated breakdown ...
High-K/metal gate stacks will be required in sub 45nm nodes technology. ... Two mechanisms were proposed for TDDB. Interfacial layer initiated breakdown ...
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Reliability Degradation Characteristics of PowerPoint PPT Presentation
Reliability Degradation Characteristics of - High temperature RTA ( 900oC) is effective to reduce the preexisting charge ... However, high temperature RTA usually causes significant EOT increase (C.S. Kang, ...
High temperature RTA ( 900oC) is effective to reduce the preexisting charge ... However, high temperature RTA usually causes significant EOT increase (C.S. Kang, ...
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Chapter 5' Bipolar Junction Transistors BJTs PowerPoint PPT Presentation
Chapter 5' Bipolar Junction Transistors BJTs - Invented in 1948 at Bell Telephone Laboratories. Dominant ... the same way PMOSFET works ... The transistor performs as a voltage controlled current source ...
Invented in 1948 at Bell Telephone Laboratories. Dominant ... the same way PMOSFET works ... The transistor performs as a voltage controlled current source ...
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332:578 Deep Submicron VLSI Design Lecture 1 CMOS Transistor Theory PowerPoint PPT Presentation
332:578 Deep Submicron VLSI Design Lecture 1 CMOS Transistor Theory - 332:578 Deep Submicron VLSI Design Lecture 1 CMOS Transistor Theory
332:578 Deep Submicron VLSI Design Lecture 1 CMOS Transistor Theory
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Pinch-off and current saturation. Channel-length modulation. Velocity saturation in a short-channel MOSFET. MOSFET ID vs. VGS characteristic ...
Pinch-off and current saturation. Channel-length modulation. Velocity saturation in a short-channel MOSFET. MOSFET ID vs. VGS characteristic ...
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The Tyranny of Roadmap: New CMOS Gate Dielectrics with Reliability Promises and Challenges PowerPoint PPT Presentation
The Tyranny of Roadmap: New CMOS Gate Dielectrics with Reliability Promises and Challenges - Raised, low-resistance source-drains. Lower parasitic on ... hot-carrier reliability is at least comparable to that of SiO2 (- Polishchuk, et al., IRPS 01) ...
Raised, low-resistance source-drains. Lower parasitic on ... hot-carrier reliability is at least comparable to that of SiO2 (- Polishchuk, et al., IRPS 01) ...
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Lecture 18 Physical Design and Layout of Diodes and Transistors PowerPoint PPT Presentation
Lecture 18 Physical Design and Layout of Diodes and Transistors - Lecture 18 Physical Design and Layout of Diodes and Transistors
Lecture 18 Physical Design and Layout of Diodes and Transistors
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332:578 Deep Submicron VLSI Design Lecture 22 Power Distribution and PhaseLocked Loop Clocking PowerPoint PPT Presentation
332:578 Deep Submicron VLSI Design Lecture 22 Power Distribution and PhaseLocked Loop Clocking - 332:578 Deep Submicron VLSI Design Lecture 22 Power Distribution and PhaseLocked Loop Clocking
332:578 Deep Submicron VLSI Design Lecture 22 Power Distribution and PhaseLocked Loop Clocking
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OUTLINE PowerPoint PPT Presentation
OUTLINE - (4): transistor biased in 'resistive' or 'triode' region. Goal: ... 'LINEAR mode' or 'TRIODE mode' ... 'LINEAR' or 'TRIODE' vDS. iD. 0. vGS VT. vDS = vGS VT ...
(4): transistor biased in 'resistive' or 'triode' region. Goal: ... 'LINEAR mode' or 'TRIODE mode' ... 'LINEAR' or 'TRIODE' vDS. iD. 0. vGS VT. vDS = vGS VT ...
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Semiconductor Manufacturing Technology PowerPoint PPT Presentation
Semiconductor Manufacturing Technology - Michael Quirk & Julian Serda. 7 - 2. EE-452 USNA. Active Component Structures ... 0 1 2 3 4 5 6. Drain-Source Voltage, VDS (volts) Drain Current, IDS (ma) ...
Michael Quirk & Julian Serda. 7 - 2. EE-452 USNA. Active Component Structures ... 0 1 2 3 4 5 6. Drain-Source Voltage, VDS (volts) Drain Current, IDS (ma) ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - Title: 1.1 Silicon Crystal Structure Author: Blyang Last modified by: tking Created Date: 3/28/2000 4:44:02 PM Document presentation format: On-screen Show
Title: 1.1 Silicon Crystal Structure Author: Blyang Last modified by: tking Created Date: 3/28/2000 4:44:02 PM Document presentation format: On-screen Show
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MOS technology and Advanced MOS device physics (Jaeger 9, Campbell Ch. 16) PowerPoint PPT Presentation
MOS technology and Advanced MOS device physics (Jaeger 9, Campbell Ch. 16) - As the name implies it uses metal gate (essentially aluminium gate) ... before the gate is deposited by aluminium evaporation. ... Aluminium mask. MOS1. 6 ...
As the name implies it uses metal gate (essentially aluminium gate) ... before the gate is deposited by aluminium evaporation. ... Aluminium mask. MOS1. 6 ...
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OUTLINE PowerPoint PPT Presentation
OUTLINE - A SiO2 film can be formed by one of two methods: ... A method of 'developing' the photoresist, that is selectively removing it from ...
A SiO2 film can be formed by one of two methods: ... A method of 'developing' the photoresist, that is selectively removing it from ...
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Studying the Effect of Molecular Hydrogen on Silicon Device Radiation Response Using Gated Bipolar T PowerPoint PPT Presentation
Studying the Effect of Molecular Hydrogen on Silicon Device Radiation Response Using Gated Bipolar T - MOSFETS exposed to 10Mrad and 1Mrad 10KeV x-rays. ... De-seal lids at least 3 days prior to soaking. 10-5 torr vacuum before filling of H2 ...
MOSFETS exposed to 10Mrad and 1Mrad 10KeV x-rays. ... De-seal lids at least 3 days prior to soaking. 10-5 torr vacuum before filling of H2 ...
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