Title: OUTLINE
1Lecture 38
- OUTLINE
- The MOSFET
- Bulk-charge theory
- Body effect parameter
- Channel length modulation parameter
- PMOSFET I-V
- Small-signal model
- Reading Finish Chapter 17, 18.3.4
2Problem with the Square Law Theory
- Ignores variation in depletion width with
distance y
3Modified (Bulk-Charge) Model
4MOSFET Threshold Voltage, VT
The expression that was previously derived for VT
is the gate voltage referenced to the body
voltage that is required reach the threshold
condition
Usually, the terminal voltages for a MOSFET are
all referenced to the source voltage. In this
case, and the equations for IDS are
5The Body Effect
Note that VT is a function of VSB
where g is the body effect parameter When the
source-body pn junction is reverse-biased, VT
is increased. Usually, we want to minimize g so
that IDsat will be the same for all transistors
in a circuit
6MOSFET VT Measurement
- VT can be determined by plotting IDS vs. VGS,
using a low value of VDS
IDS
VGS
7Channel Length Modulation Parameter, l
- Recall that as VDS is increased above VDsat, the
width DL of the depletion region between the
pinch-off point and the drain increases, i.e. the
inversion layer length decreases.
8P-Channel MOSFET
- The PMOSFET turns on when VGS lt VTp
- Holes flow from SOURCE to DRAIN
- ? DRAIN is biased at a lower potential than the
SOURCE - In CMOS technology, the threshold voltages are
usually symmetric VTp -VTn
VG
- VDS lt 0
- IDS lt 0
- IDS increases with
- VGS - VTp
- VDS (linear region)
VS
VD
GATE
IDS
P
P
N
VB
9PMOSFET I-V
- Linear region
- Saturation region
m 1 (3Toxe/WT) is the bulk-charge factor
10Small Signal Model
11Inclusion of Additional Parasitics
12Cutoff Frequency
- fmax is the frequency where the MOSFET is no
longer amplifying the input signal - Obtained by considering the small-signal model
with the output terminals short-circuited, and
finding the frequency where iout / iin 1 - Increased MOSFET operating frequencies are
achieved by decreasing the channel length