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Speed/Convergence Comparison. Test Environment. SmartSpice 64bit, Version 3.3.0B ... Speed/Convergence Comparison. Test Results. Circuit 7. 32-bit Parity ...
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... RF-NMOS transistors of various gate widths, gate lengths and number of fingers. Data was y22 taken up to 20GHz on a 65nm CMOS process. RBODYMOD=2, ...
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Circuit Simulation with PSP. MCNC CircuitSim90 mos2_large test suite ... compared to BSIM4, PSP takes: 1.03x more timesteps. 0.99x more iterations per timestep ...
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Now we must remove extraction documentation from BSIM4 manual and put into a ... equations for gates with right angles; still need exact equations for 45 degree gates. ...
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Nexxim. Latest version: 3.5.1. 1.0. R2. 1.0. MOSVAR. LRM 2.2 (full) ... Latest Version. 504.7. MEXTRAM. BSIMSOI. 4.6.0. BSIM4. BSIM3. Future Version(s) Model ...
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COM BTS TD DIF CM. Wolfgang Richter. TITAN Group, Qimonda. Joachim Assenmacher. IFAG COM BTS TD DIF CM. PSP102 Performance. 12/06/2006. Page 2 ...
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Title: PowerPoint Presentation Last modified by: k-mori Created Date: 1/1/1601 12:00:00 AM Document presentation format: Other titles
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... are distributed online as pre-compiled, pre-linked, pre-tested binary models ... immediate and reliable access to the most up-to-date high performance SPICE models ...
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Halo adjustment term similar to Lpe0. CMC. To Model Asymmetry. Well Edge. Gate. Isolation ... main 1 2 3 4 nfet w=w l=l sca=sca scb=scb scc=scc ...
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CADENCE CONFIDENTIAL. PSP and HiSIM2 Model Evaluation. Yutao Ma, Min-Chie ... CADENCE CONFIDENTIAL. Discontinuity issue in Hsim2 caused by small size effect ...
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CADENCE CONFIDENTIAL. Hicum Model in Spectre. Diana Moncoqut, R&D manager. June 4, 2004 ... made by Cadence. Update to version 2.1 in 2001 made by Cadence ...
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Fast Circuit Simulation on Graphics Processing Units Kanupriya Gulati John F. Croix Sunil P. Khatri Rahm Shastry Texas A&M University, College Station, TX
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Band-to-band tunneling (BBT) induced leakage current enhancement in irradiated ... Mechanisms of enhanced radiation-induced degradation due to excess molecular ...
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Flicker Noise due to scaling. Scaling Thinner gate oxide Gate leakage ... Flicker noise increasing of SiON gate insulator is problems for performance. ...
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Modeling flow and models improvement for I3T ON Semiconductor technologies Petr Betak, Petr Zavrel, Lenka Sochova, Jan Plojhar
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CMC June 30, 2005. HiSIM-2 Bug Fixes, Pending Problems. Summary of recent bug fixes ... CMC June 30, 2005. HiSIM-2: Bug fix in GISL/GIDL Currents ...
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RF and mmWave Research
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Should extraction be conditional on device width? Does default value of 20 for SC make sense? ... and document the specification on the layout extraction side. ...
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Developing and Releasing Compact Models Using Verilog-A ... Common 'idiom' for collapsible nodes: if(Rc 0.0) I(c, ci) V(c, ci)/Rc; else ...
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RF MICRO DEVICES THE TOTAL RADIO (TM) SOLUTION. 1. 05/08/2006. Some Observations Regarding ... process published on the CMC web site with modifications of the ...
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Schwerpunkt Mikroelektronik. Migration zu 0,13 m. AMS: MOS Transistor Modelling ... F r moderne CMOS-Prozesse werden immer genauere Transistormodelle erforderlich ...
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Working with Berkeley to add abbreviated Chapter 14 to BSIM documentation ... layers, into the channel region during the fabrication of the devices. ...
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The tangent field can be taken to be proportional to VG VTO. The text suggest the equation: ... to fit data and IDO is picked to provide current continuity. ...
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(i.e. absolute permittivity of oxide eox = e0 eSiO2 is pinned to SiO2 in the model) ... (i.e. set PSP TOX parameter to the calculated TOXEOT value: Cox = eox / TOX ) ...
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Advances in 1/f noise modeling: 1/f gate tunneling current noise model of ultrathin Oxide MOSFETs F. MARTINEZ, M.VALENZA Institut d lectronique du Sud CEM2 ...
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Correct: LG = WE. Will be fixed in next PSP release. Documentation ... If NP is very large, the PD effect is (almost) negligible ...
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Introduction to Nano-Device Research in HKUST Mansun Chan Professor, Dept. of ECE, HKUST Major Projects Active Projects Nano-Transistor Fabrication and Modeling ...
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equations for ... Drift-diffusion equations based on surface potential. s Continuous model ... sustain oscillation lower gm equates to less noise, lower ...
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MOS-AK/ESSDERC/ESSCIRC Workshop (Montreux 2006) ... flicker = strongInversionNoiseEval(vds, temp); Compiler/Simulator MUST do this optimization ...
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Good weak-strong inversion transition. Transconductance when VDS is small ... Device geometries from SPICE (table, graph); may require iteration (e.g. CGS) Sweep V1 ...
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Electrical Engineering and Computer Science. University of Michigan ... Electrical Engineering and Computer Science. OBD HSPICE Model. Post-breakdown leakage modeling ...
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... and Measurements at 60 GHz. Chinh H. Doan. Timo Karttaavi. Robert W. Brodersen. January 13, 2005. Outline ... Holistic noise model for short-channel and ...
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Motivated by symmetry test/ IM3 modeling (Freescale, Jazz, IBM) Improved ... Zeros no longer occur in parameter names, to avoid confusion between zeros and ' ...
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Supply voltage affects both active and leakage energy ... Sync. Slice. Up Smp. Register. FIFO. DPRAM. ROM. RAM. Accum. CMult. AddSub. Inverter. Logical ...
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C4 is the capacitance between the channel and the bulk. ... If we include the flicker noise source, how would that affect the computation? ...
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Today 18 members fabless, IDM, Foundry, EDA and Back-end Supplier ... Tracks versions of foundry documents, EDA tools, SPICE models ...
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Regular and restricted design rule (RDR) logic fabrics ... 2/3rd Annular. s = 0.75. Pileggi 6. www.c2s2.org. Example: Gridded M1 Patterns. Pattern B ...
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Cypress Confidential. AGENDA (ACRONYM TEST) BSIM BASICS, NEW FEATURES ... Cypress Confidential. NWELL IMPLANT EFFECTS CMOS. HIGH ENERGY ATOMS BOUNCE OFF PHOTORESIST ...
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