???????????%20??????TEG

1
?????????????????TEG

• ????????? ??????
• ???????? ???????
• ?? ?? ??? ????? ?
• 2013/3/4

2
??

• 1.?????????????????TEG
• 1.1 ??
• 1.2 ???TEG??????TEG??
• 1.3 ?????????????
• 1.4 ?????????????
• 1.5 ???
• ????

3
1.1 ??

• (1)SPICE????3?????BSIM????????L???W???????????????
  ??????????????
• (2)(1)??????????????????????????????Binning???????
  ???????????
• (3)BSIM3v3?BSIM4??????????????????????????????????
  ???????????????????
• (4)RF?????????R?L?C?????????????????????????

4
1.2 ???TEG??????TEG??

• 1.2.1 ???DC TEG
• 1.2.2 ???????DC TEG
• 1.2.3 ?????TEG
• 1.2.4 ?????????TEG

5
1.2.1 ???DC TEG
???????????OFF??
???????????ON??
(LRDB)
?4 DUT??????? DUT???????????
?????????????? LRDB?????
?1 ????????
6
1.2.2 ???????DC TEG
AND33
???????????? (VGF?VGS?VGL?VSF?VS
S?VBF?VBS)
????????????????????????????????
????????????(VDF?VDS?VDL)
??????????
?????????
UNIT_CELL???????
7
1.2.3 ?????TEG(1)
James C. Chen, Bruce W. McGaughy, Dennis
Sylvester, and Chenming Hu An On-Chip, Attofarad
Interconnect Charge-Based Capacitance Measurement
(CBCM) Technique IEDM 1996
Open?Short??
????
????
????
0.01fF10aF????
??????Pch Tr?Nch Tr???????????
8
1.2.3 ?????TEG(2)
Yao-Wen Chang, Hsing-Wen Chang, Tao-Cheng Lu,
Ya-Chin King, Wenchi Ting, Yen-Hui Joseph Ku, and
Chih-Yuan Lu Charge-Based Capacitance
Measurement for Bias-Dependent Capacitance IEEE
ELECTRON DEVICE LETTERS, VOL. 27, NO. 5, MAY 2006

????
????
?1? 2?????CIEF CBCM??????????????MOSFET???????????
??????? ???????????????????????VCC??1??PAD??GND?
???????????
9
1.2.3 ?????TEG(3)
?4? ????????/????????/?????????????
????MOSFET?????????????????????
10
1.2.4 ?????????TEG
???????????????????
?????????????????????
????????????CBCM???????
11
1.3 ?????????????

• 1.3.1 ??????????TEG??
• 1.3.2 ???????????????
• 1.3.3 RD?RS?????
• RDRS?????????
• 1.3.4 WD?LD?????
• 1.3.5 VTO?????
• 1.3.6 UO?????
• 1.3.7 THETA?????
• 1.3.8 VMAX?????

12
1.3.1 ??????????TEG??
13
1.3.2 ???????????????
(2)WD???
(5)UO???
????
????
(6)THETA???
(7)VMAX???
(2)LD???
(1)RDRS???
(4)VTO???
14
1.3.3 RD?RS?????

• Rout-VDS??

15
1.3.3 RD?RS????????
I-V???R-V??????
????
????
????
I
I
I


I-V??
V
V
V
R
R
R
R-V??


16
RDRS?????????
Influence of RDS in VTH
With series resistance
Intrinsic device
17
1.3.4 WD?LD?????

• IDS-W??

18
1.3.5 VTO?????(????)
? ???
19
1.3.6 UO?????(???)
??? ???
20
1.3.7 THETA?????(????)
ß
ß-VGS??
VBS0V VDS0.05V,0.1V
ß1
ß2
VGS
VGS1
VGS2
21
1.3.8 VMAX?????(????)
22
1.4 ?????????????

• 1.4.1 ???????????
• 1.4.2 ???????LDD???????
• LEVEL3???????
• ???????LDD???????
• 1.4.3 ??????????
• 1µm???Rout??????????
• 1.4.4 Cgb-Vgb??
• Cgb-Vgb????????????

23
1.4.1 ???????????
????
????
24
1.4.2 ???????LDD???????
????????????2??LDMOS?????Ids-Vgs???Ids-Vds????????
??????
25
LEVEL3??????????????LDD???????
??????LDD??????
26
1.4.3 ??????????
????????
???????????????????????????????
27
1µm???Rout??????????
Rout
L
1µm
28
1.4.4 Cgb-Vgb??
29
Cgb-Vgb????????????
A Simple Model for the Overlap Capacitance of a
VLSI MOS Device
Region AB gate oxide capacitance
parallel-plate overlap component the
fringing components
Region CD parallel-plate overlap component
the fringing components
Region DE inversion capacitace the fringing
components
30
1.5 ???

• (1) ??????????????????????????????????????????DC
  TEG???????????????
• (2) ??????????????????????????????????????????TEG?
  ??????????????
• (3) (1)(2)?TEG????????????????????????????????????
  ?DC TEG???TEG?????????????????????????????????????
  ???

31
????

• ???????????????
• ????