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Microelectronics Circuit Analysis and Design

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Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 5 The Bipolar Junction Transistor In this chapter, we will: Discuss the physical structure and ... – PowerPoint PPT presentation

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Title: Microelectronics Circuit Analysis and Design


1
Microelectronics Circuit Analysis and Design
  • Donald A. Neamen
  • Chapter 5
  • The Bipolar Junction Transistor

2
In this chapter, we will
  • Discuss the physical structure and operation of
    the bipolar junction transistor.
  • Understand the dc analysis and design techniques
    of bipolar transistor circuits.
  • Examine three basic applications of bipolar
    transistor circuits.
  • Investigate various dc biasing schemes of bipolar
    transistor circuits, including integrated circuit
    biasing.
  • Consider the dc biasing of multistage or
    multi-transistor circuits.

3
Cross Section of Integrated Circuit npn
Transistor
4
Modes of Operation
  • Forward-Active
  • B-E junction is forward biased
  • B-C junction is reverse biased
  • Saturation
  • B-E and B-C junctions are forward biased
  • Cut-Off
  • B-E and B-C junctions are reverse biased
  • Inverse-Active (or Reverse-Active)
  • B-E junction is reverse biased
  • B-C junction is forward biased

5
npn BJT in Forward-Active
6
Electrons and Holes in npn BJT
7
Electrons and Holes in pnp BJT
8
Circuit Symbols and Current Conventions
9
Current Relationships
10
Common-Emitter Configurations
11
Common-Base Configuration
12
Current-Voltage Characteristics of a Common-Base
Circuit
13
Current-Voltage Characteristics of a
Common-Emitter Circuit
14
Early Voltage/Finite Output Resistance
15
Effects of Leakage Currents on I-V
Characteristics
16
Effect of Collector-Base Breakdown on Common Base
I-V Characteristics
17
Effect of Collector-Base Breakdown on Common
Emitter I-V Characteristics
18
DC Equivalent Circuit for npn Common Emitter
19
DC Equivalent Circuit for pnp Common Emitter
20
Load Line
21
Problem-Solving TechniqueBipolar DC Analysis
  • Assume that the transistor is biased in forward
    active mode
  • VBE VBE(on), IB gt 0, IC bIB
  • Analyze linear circuit.
  • Evaluate the resulting state of transistor.
  • If VCE gt VCE(sat), assumption is correct
  • If IB lt 0, transistor likely in cutoff
  • If VCE lt 0, transistor likely in saturation
  • If initial assumption is incorrect, make new
    assumption and return to Step 2.

22
Voltage Transfer Characteristic for npn Circuit
23
Voltage Transfer Characteristic for pnp Circuit
24
Digital Logic
Inverter
NOR gate
25
Bipolar Inverter as Amplifier
26
Effect of Improper Biasing on Amplified Signal
Waveform
27
Single Base Resistor Biasing
28
Common Emitter with Voltage Divider Biasing and
Emitter Resistor
29
Integrated Circuit Biasing
30
Multistage Cascade Transistor Circuit
31
Multistage Cascode Transistor Circuit
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