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ECE 425 VLSI Circuit Design

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2-2, 2-5, 2-6, 2-7, 2-8, 2-9, 2-12, 2-13, 2-20. Problem 2-13 hints: ... (e.g. AMI, Agilent, IBM, TSMC) Packages chips & ships back to designers ... – PowerPoint PPT presentation

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Title: ECE 425 VLSI Circuit Design


1
ECE 425 - VLSI Circuit Design
  • Lecture 5 - More about Layout
  • Spring 2005

Prof. John NestorECE DepartmentLafayette
CollegeEaston, Pennsylvania 18042nestorj_at_lafayet
te.edu
2
Announcements
  • Homework due Friday 2/18
  • 2-2, 2-5, 2-6, 2-7, 2-8, 2-9, 2-12, 2-13, 2-20
  • Problem 2-13 hints
  • Assume VDD / p-transistors in top half,
  • Gnd / n-transistors in bottom half
  • Entrance Exam due Friday 2/18
  • Reading
  • Wolf 2.1-2.6, 3.1-3.4
  • Engineering Recruiting Day Fri. 4/1 in
    Philadelphia
  • Submit resumes to Career Services by Feburary 25

3
Where we are...
  • Last time
  • Latchup
  • Stick Diagrams
  • Today
  • More about design rules (Lecture 4 notes)
  • More about Magic (Lecture 4 notes)
  • Hierarchical Stick Diagrams
  • Cell Connection Schemes, Example
  • Scaling
  • The ITRS

4
Aside - About MOSIS
  • MOSIS - MOS Implementation Service
  • Rapid-prototyping for small chips
  • Multi-project chip idea - several designs on the
    same wafer
  • Reduced mask costs per design
  • Accepts layout designs via email
  • Brokers fabrication by foundries (e.g. AMI,
    Agilent, IBM, TSMC)
  • Packages chips ships back to designers
  • Our designs will use AMI 1.5µm process (more
    about this later)

5
Aside - About MOSIS
  • Some Typical MOSIS Prices (from www.mosis.org)
  • AMI 1.5µm Tiny Chip (2.2mm X 2.2mm) 1,130
  • AMI 1.5µm 9.4mm X 9.7mm 18,880
  • AMI 0.5µm 0-5mm2 6,500
  • TSMC 0.25µm 0-10mm2 18,600
  • TSMC 0.18µm 0-7mm2 30,000
  • IBM 0.13µm 0-10mm2 57,000
  • MOSIS Educational Program (what we use)
  • AMI 1.5µm Tiny Chip (2.2mm X 2.2mm) FREE
  • AMI 0.5mm Tiny Chip (1.5mm X 1.5mm) FREE

sponsored by MOSIS, AMIS, Inc., and IBM
6
Layout Considerations
  • Break layout into interconnected cells
  • Use hierarchy to control complexity
  • Connect cells by
  • Abutment
  • Added wires
  • Key goals
  • Minimize size of overall layout
  • Meet performance constraints
  • Meet design time deadlines

7
Hierarchy in Layout
  • Chips are constructed as a hierarchy of cells
  • Leaf cells - bottom of hierarchy
  • Root cells - contains overall cell
  • Example - hypothetical UART
  • Pad frame - ring that contains I/O pads
  • Core - contains logic organized as subcells
  • Shift register
  • FSM
  • Other cells

8
Hierarchy Example
  • Root Cell UART

9
Hierarchical Stick Diagrams
  • Define cells by outlines use in a hierarchy to
    build more complex cells

10
Cell Connection Schemes
  • External connection - wire cells together
  • Abutment - design cells to connect when adjacent
  • Reflection, mirroring - use to make abutment
    possible

11
Example 2-input multiplexer
  • First cut

12
Refined Mux Design
  • Use NAND cell as black box
  • Arrange easy power connections
  • Vertical connections for allow multiple bits

13
Multiple-Bit Mux
14
Cell Mirroring, Overlap
  • Use mirroring, overlap to save area

15
Scaling Design Rules
  • Effects of scaling down are positive
  • See book, p. 78-79 - if everything scales,
    scaling circuit by 1/x increases performance by x
  • Problem not everything scales proportionally
  • Dielectric thickness tox
  • Power supply VDD
  • Interconnect
  • International Technology Roadmap for
    Semiconductors (ITRS) - see www.itrs.net

16
Scaling Transistors
  • What is the impact of scaling transistor
    dimensions by a factor of 1/x?
  • Constant field scaling (book, from Dennard 74)
  • Scale all dimensions by 1/x
  • Scale doping concentrations by 1/x
  • Scale supply voltage, threshold voltages by 1/x

17
Constant-Field Scaling (contd)
  • Effect on drain current in saturation
  • Effect on gate capacitance
  • Effect on circuit speed (time constant CV/I)

Bottom line speedup of 1/x!
18
Transistor Scaling
  • See Handout Transistor Scaling Section (4.9.1)
    ofN. Weste and D. Harris, CMOS VLSI Design, 3rd.
    Ed.
  • Alternative scaling Lateral scaling or Gate
    shrink
  • Summary - see WH table 4.15

19
Scaling Interconnect
  • See Handout Scaling Sections (4.9.2) fromN.
    Weste and D. Harris, CMOS VLSI Design, 3rd. Ed.
  • Types of scaling constant-field vs. constant
    thickness
  • Summary - see WH table 4.16
  • Bottom line interconnect delay gets worse with
    scaling

20
Coming Up
  • The ITRS Roadmap
  • Overview - VLSI Design Flow Tools
  • ASIC Layout Styles Economics
  • More about CMOS Gate Design
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