Detailed agenda

1
Detailed agenda
2
WP10 - FAA4 Single photon emitters
characterization facility
FAA4

• EPFL (Andrea Fiore and Eli Kapon )
• Coordinator Andrea Fiore (EPFL)
• Deputy coordinator Fredrik Karlsson (EPFL)
• EPF Lausanne, INSA Rennes, COM Lyngby, CEA
  Grenoble, CNRS-IOTA Paris, COBRA Eindhoven, Univ.
  St. Andrews, CNR-IFN Rome (affiliate)

3
Research Highlight
FAA4
Single photon emission at 800 nm from
selectively grown quantum dots on MOVPE-grown
pyramids (EPFL-Kapon)
Single photon emission at 1300 nm from
MBE-grown self-organized quantum dots (EPFL-Fiore
et CNR)
State-of-the-art in single-f emission
and?characterisation at both wavelengths
4
Research Highlight
FAA4
Integration of single QDs in Photonic Crystal
membrane microcavities
L3 cavities with displaced holes
Growth EPFL Nanofab CNR Charact. EPFL
Coupling single QDs to cavity
QD
cavity
Q9440
First demo. of coupling of single 1300 nm QDs to
PhC mcavity
5
Research Highlight
FAA4
Photonic crystal membrane microcavity at 1500 nm
on InP
MBE growth INSA Rennes Nanofab St. Andrews
Tests of membrane etch under way
Objective PhC cavity at 1.55 mm with InAs/InP
QDs Difficulty Fabrication on (311) InP (RIE,
wet etch)
6
Research results
FAA4
EBL transfer on SiN mask RIE
Pillar microcavities
2 mm-diameter
Q3000
First demo of Spon. Emission enhancement at 1300
nm
Growth Charact at EPFL - Nanofab at CEA
7
Integration results
FAA4

• Microphotoluminescence and single photon
  measurements facility access to partners microPL
  measurements performed for 4 different partners
• Documentation for access and use of the 2 set-ups
  prepared (ePIXnet website)
• Training for Ph.D. students 6 JREs (12 weeks),
  1 SRE
• Single photon interferometric measurements done
• Fabrication of pillar microcavities 1 batch of
  micropillars fabricated and characterized

Highlights
3 PhD students jointly supervised (EPFL /
CNR) Joint research activity between EPFL and
CEA Joint research activity between INSA, EPFL
and St Andrews
8
Reaction on comments
FAA4

• Reviewers noted that emphasis in the project has
  shifted from setting up the facility to
  developing and studying single photon sources.
  Should be continued with STREP-or IP-type funding
  (no appropriate call at present).
• Reviewers noted good scientific progress, a good
  working facility, and excellent collaboration
  between partners.
• Intellectual property issues to be taken into
  account researchers see no opportunity for a
  single QD emission related IP at this stage
• However, a he possibility for patents on single
  photon detectors is pursued at EPFL.

9
Self assessment
FAA4

• 1 Research quality
• Excellent, 8 journal papers published and 24
  conference presentations, among which 7 invited
  in the two years..
• 2 Research Integration quality
• Very good. Four JREs and one senior exchange
  during the second year. Some of the labs have
  established a long-term collaboration, including
  joint supervision of several PhD theses. 3 The
  degree in which the facility is used by the other
  partners
• Good. Samples from four different partners have
  been measured at EPFL, in most cases associated
  to a JRE
• 4 The degree in which the access is organised and
  documented
• Good. A documentation on the facility has been
  realized and put on the website. The
  specificities of the facility (high sensitivity
  and resolution optical spectroscopy) make it
  difficult to use it without direct supervision of
  the responsible however several PhD students
  have been trained on it and in some cases they
  have been able to make measurements
  independently.
• 8 The degree in which the facility or the
  complementary facilities are unique
• Very good. The facility regroups two optical labs
  with state-of-the-art instrumentation for
  high-sensitivity micro-photoluminescence
  measurements in the visible and 1300-1550 nm
  regions.
• 9 The degree by which the activities lead to a
  stronger industrial position
• Little. Industrial exploitation of these
  technologies is still relatively far ahead.

10
WP14 - JRA3 Quantum dot arrays with engineered
linear and nonlinear optical properties for
selective optical signal processing
JRA3

• Cobra TU-Eindhoven
• Coordinator Richard Nötzel
• Deputy coordinator Sanguan Anantahanasarn
• Cobra TU-Eindhoven, Paul Drude Institute,
  COM-Lyngby, UA Madrid, Max Born Institute

11
Scientific results
JRA3
Micro-PL and time resolved PL of one- and
two-dim. InAs/GaAs QD arrays
SEM (under 36o) of 200 x 200 nm2 hole in Al mask
Power and polarization dependent micro-PL of Al
hole masked linear QD arrays showing distinct
groups of sharp lines indicating electronic
coupling. No pronounced polarization dependence
(UAM)
Time resolved PL of two-dim. QD arrays The
lifetime in the template is very long, probably
due to strain induced electron-hole separation
The QD lifetime is not mono-exponential More
studies follow (COM)
12
Scientific results
JRA3

• Lasing of wavelength tunable (1.55 µm region)
  InAs/InGaAsP/InP (100) QDs

Wavelength tuning of the QDs is achieved by the
insertion of ultra-thin GaAs interlayers,
controlling As/P exchange and QD size TEM and
strain analysis reveal the GaAs interlayer and
InAs QDs (PDI) More laser structures currently
processed at COM for SOA-EA combinations, linear
and mode-locked lasers, and femtosecond pulse
propagation measurements After successful
realization of InAs/InP (100) QDs, extension to
ordered QD arrays
13
Integration results
JRA3

• Excellent use of complementary facilities
• growth at Tue
• microPL at UAM
• SNOM PL at MBI
• high resolution TEM at PDI for structural
  characterization
• First full set of experiments on linear InAs/GaAs
  QD arrays completed
• 2 JREs
• UAM to Cobra Tue - D. Sarkar (Sept 2005 - 2
  weeks)
• UAM to Cobra Tue - E. Gallardo (Aug. 2006 - 3
  weeks)
• 1 SRE
• visit by R. Nötzel to UAM
• Fabrication of Al-hole masks by e-beam
  lithography and etching at Cobra on a series of
  InAs/GaAs linear QD arrays grown at Cobra for
  micro-PL measurements at UAM
• A potentially lasting good collaboration with
  complementary equipment

14
Reaction on comments
JRA3

• Integrating power of this JRA was deemed not to
  be very strong, despite the fact that good
  collaborations between partners are evident and
  good use was made of specialized facilities in
  the different sites.
• Junior exchange program should come up to full
  speed once more samples are available for
  characterization and the experimental measurement
  set-ups are completed (micro-PL and SNOM). Two
  JREs of 2 and 3 weeks duration were completed in
  year 2.

15
Self assessment
JRA3

• 1 Research quality
• Good. Interesting results have been achieved for
  ordered quantum dot arrays.
• 2 Research Integration quality
• Good on the research level. Complementary results
  have been achieved. To be improved on the direct
  researcher exchange level.
• 5 The degree of complementarity of the facilities
  and/or the know-how
• Good. The complementary of the facilities and
  know how is very high. The overlap is small but
  sufficient for a fruitful collaboration.
• 6 The degree of reduction of duplication
• Good. Setting the different research targets
  among the partners strongly reduces duplication.
• 7 The degree in which the access to the different
  parts of the equipment is facilitated
• Good. Samples are being prepared and measured at
  the different locations without barriers.
• 8 The degree in which the facility or the
  complementary facilities are unique
• Good. The full chain from fabrication through
  characterization to device analysis for such
  complicated systems is unique.
• 9 The degree by which the activities lead to a
  stronger industrial position
• For such kind of long term basic research this
  can only be judged at a later stage.

16
JRA3
ContinuationJRA QD arrays
QDarray

• Title
• Quantum dot arrays with engineered linear and
  nonlinear optical properties for selective
  optical signal processing
• Connection to platforms
• Platform on InP based Monolithic Integration
• Research Unchanged with shift on development and
  assessment of ordered InAs/InP QD arrays for 1.55
  µm telecom applications
• Reason Ordering is essential for selective
  optical signal processing providing spatially
  well separated channels within the same active
  region
• INSA Rennes is new partner on modeling of ordered
  QD arrays to enhance the collaboration with JRA4
  on QD lasers, elaborating the complementary
  applications and comparing common device
  structures

17
Workplan Partners
QDarray

• InP platform Processing of waveguide devices
• Role of partners
• eiTT/COBRA MBE/MOVPE growth of ordered QD
  arrays, basic materials characterization by AFM,
  XRD, PL
• PDI Cross-section and plan-view TEM, strain
  mapping using Lattice Distortion Analysis
• COM Nonlinear optical spectroscopy, transient
  four wave mixing, differential transmission of QD
  arrays in waveguides
• UAM Linear optical properties, time resolved PL,
  magneto PL, polarization dependent PL
• MBI SNOM of single QD arrays, PL mapping, time
  resolved SNOM, PL correlation spectroscopy
• INSA Rennes Modeling of ordered QD arrays

18
WP15 - JRA4 High speed transmission based on
chirpless QD laser sources
JRA4

• INSA-Rennes
• Coordinator Slimane Loualiche
• Deputy coordinator Laurent Joulaud
• INSA-RENNES, CNRS-ENNSAT, CAM, COM, CNRS-LPN,
  Bookham

19
Scientific Results
JRA4
RT lasing by optical pumping (double peaked
emission) No lasing under electrical injection
due to presence of InP barrier
Difficulties for technology transfer from mature
(100 substrate to (311)B substrate
20
Scientific Results
JRA4
2nd generation structure (double cap layer)
2 mm 2 mm single mode ridge waveguide Threshold
curent 80 mA (cw), 60 mA (pulsed)
RIN measurements performed (ENSSAT) Mounting of
monomode lasers for RF measurements (COM)
unsuccesful so far
21
Integration results
JRA4

• 2 Series of samples from INSA-Rennes delivered to
  LPN, fabricated and characterized
• Wafer with QD laser structure delivered to
  Alcatel-Thales 3-5 lab for DFB laser fabrication
• 2 JREs (INSA-Rennes to CNRS-LPN), 2 weeks each
  InP (311)B technology
• 1 JRE (INSA-Rennes to EPFL), 1 week QD
  characterization
• Ongoing collaboration INSA-Rennes with Polito
  Turin on modeling

22
Research Integration
JRA4

• use of the single-photon facility at
• EPFL (FAA4) to study low density
• InAs/InP(113)B QDs

- design of two section laser diode for mode
locking (JRA6)
23
Reaction on comments
JRA4

• Reviewers noted that the integration level was
  difficult to assess because most work
  concentrated on design, growth and processing.
  Project vertical in nature with each partner
  having a definite role
• Work priority to be set on improving quality and
  repeatability of growth to allow stable
  processing and mounting of laser diodes
• Start of integrated project Zero Order
  Dimension based Industrial components Applied to
  teleCommunications   (ZODIAC FP6-2004-IST-NMP-2)
  including four partners from ePIXnet is a first
  positive result of the network.

24
Self assessment
JRA4

• 1 Research quality
• Good work has been done on growth of high quality
  InAs quantum dots on InP(311)B substrates and to
  transfer the mature processing steps on InP(100)
  to less stable InP(311)B.
• 2 Research Integration quality
• The integration level is difficult to judge as
  pointed by the reviewers. However the exchanges
  and collaborating work (inside JRA4 and with
  other Epixnet activities) have lead to solve some
  of the encountered difficulties.
• 5 The degree of complementarity of the facilities
  and/or the know-how
• Very good complementarity due to the vertical
  organization of the activity.
• 6 The degree of reduction of duplication
• The vertical organization of activity implies no
  duplication.
• 7 The degree in which the access to the different
  parts of the equipment is facilitated
• Even if the maturation of the processing on
  InP(311)B is not fully done yet, this would not
  have been possible without the collaboration of
  partners inside this activity.
• 8 The degree in which the facility or the
  complementary facilities are unique
• The partners collaborating in this activities
  have developed a unique facility to go from
  material to high speed testing of quantum dot
  devices at 1.55µm on InP(311)B substrates.
• 9 The degree by which the activities lead to a
  stronger industrial position
• Quantum dot devices are very promising for a lot
  of applications including optical
  telecommunications.

25
JRA4
ContinuationJRA InP QD
InP QD

• InP Quantum dot devices
• Based on InAs/InP quantum dot growth at
  INSA-Rennes for 1550 nm quantum dot devices (low
  chirp high speed lasers, semiconductor optical
  amplifiers)
• Research targets
• - QD and QDH laser characterization at 2.5 Gb/s
  under direct modulation
• - Mode locked 2-section laser on InP (100) or InP
  (311)B
• - Semiconductor optical amplifiers
• Partners
• INSA-Rennes (epitaxy), LPN-CNRS (processing),
  ENSSAT (noise measurements), COM (dynamic
  properties), CAM (system measurements), Bookham
  (industry transfer)

26
Detailed agenda
27
FAA1 Access to monolithic integration of InP
active and passive devices
FAA1

• Coordinator Jan Hendrik den Besten
  (j.h.d.besten_at_tue.nl)

28
Research Integration Concept
FAA1
COBRA researcher
Partner researcher
1.
Technology research
Modelling
mask design
2.
chip fabrication
3.
4.
chip measurement
chip measurement
5.
joint papers or chapter of PhD theses
29
Integration Results
FAA1

• 5 partners
• sharing one wafer
• 7 different devices
• flip-flop gt not yet measured
• N-bit XOR-gate gt not yet measured
• Duplexer gt measured,ok
• 2R-regenerator gt too high losses
• XWG gt measured, ok
• WLC gt too high losses
• ring laser gt too high losses

30
Integration Results
FAA1

• 5 partners
• sharing one wafer
• 7 different devices
• Coupled chaos lasers
• WLCs
• low rep-rate MLLs
• MWL-MLLs
• Tunable AWG(L)s
• Optical Cross-Connect
• Flip-flops
• design finished, fabrication scheduled

31
Research HighlightIntegrated Transceiver
FAA1
32
Research HighlightCross Waveguide Grating
FAA1
see also poster session
33
Reaction on comments
FAA1

• Benchmarking difficult because there are no
  really comparable activities, so far.
• Cooperation with POLITO and Bookham
• POLITO 1-year JRE
• Bookham very active partner in JePPIX
• IP-issues presently worked out at the level of
  company jurists at COBRA and Bookham.
• Duration of FAA1 JREs much longer than average.
• Second SRE started Dr. Williams from Cambridge
  three years at COBRA on PICs.

34
Self assessment
FAA1

• 1 Research quality
• Satisfactory, output hampered by problems in
  process stability.
• 2 Research Integration quality
• Excellent COBRA offers access to a process which
  would otherwise be out of reach for almost all
  universities
• 3 The degree in which the facility is used by the
  other partners
• Good, hampered by problems in process stability
• 4 The degree in which the access is organised and
  documented
• Very good, process and design software are
  documented and active design support is provided
• 8 The degree in which the facility or the
  complementary facilities are unique
• Excellent, as far as we know no other university
  offers access to active-passive integration
• 9 The degree by which the activities lead to a
  stronger industrial position
• Very good, the new platform organizes the key
  players in Europe and has the ambition to provide
  Europe with a lead.

35
JRA InP AWG
InPAWG

• Coordinator Pascual Muñoz ( pmunoz_at_gco.upv.es )
• Deputy Coordinator Xaveer Leijtens
  (X.J.M.Leijtens_at_tue.nl)

36
New Research Activity
InPAWG

• Goal
• design, fabrication and characterization of
  Active AWG-based devices
• Result of splitting of FAA1 in platform JRA
• Partners UPV, Politecnico, COBRA

37
Research targets
InPAWG

• Research Targets of the new activity
• Fabrication and characterization of,
• novel integrated optics WDM-TOAD
• multi-wavelength laser
• improved XWG designs
• tunable AWG

38
Integration targets
InPAWG

• Integration Targets of the new activity
• systems to device level feedback/feedforward
  between JRA partners
• user of InP integration technology platform
• part of the design and simulation work to be done
  on the Modeling Platform

39
Partners and structure
InPAWG

• Who will do what in this activity?
• UPVLC coordination, scheduling, XWG and TOAD
  simulation, design and test
• COBRA phase modulator add-on to TOAD, tunable
  AWG, assembling designs
• POLITO multi-? design and testing
• InP Platform fabrication
• Modeling Platform
• support simulation
• recipient for simulation knowledge

40
JRA7 Silicon-on-Insulator (SOI) based optical
board technology for multi-purpose hybrid
integration
JRA7

• Coordinator K. Petermann
• (petermannATtu-berlin.de)
• Deputy Coordinator L. Zimmermann
• (Lars.ZimmermannATtu-berlin.de)

41
Waveguide Technology
JRA7
DPSK-Demodulator
SOI
w 3.5µm
h 2µm
25 x 25mm2
Si
H 4µm
SiO2
42
Soldering Technology
JRA7
High precision flip-chip technology
SOI-board with 4 lasers
Alignment stops
43
Results Most Striking Outcome
JRA7

• state of the art PDF performance
• collaboration within federal project
• setup of new JRA platform

44
Reaction on reviewer comments
JRA7

• Not evident what the industrial partners
  contribute
• The drop out of Hymite caused structural problems
  in the collaboration.
• Core Optics contributed with Simulation
• New affiliate partner NTNU Taipei, conditions
  not clear, reciprocal basis?
• The boundary conditions, under which
  (non-European) affiliated partners can
  participate in the Network, are dealt with by the
  management of ePIXnet.
• Integration not clear
• Drop-out of Hymite and small number of partners
  hapered integration. This activity will be
  broadened to a hybrid integration JRA.

45
Self assessment
JRA7

• 1 Research quality
• Very good State of the art PDF in MZ
  demodulator.
• 2 Research Integration quality
• Satisfactory The integration momentum has been
  weak. The collaboration has led to ongoing
  research in the frame of a national project,
  which shall continue the D(Q)PSK activities.
• 5 The degree of complementarity of the facilities
  and/or the know-how
• High Industrial partners system-testing and
  simulation capabilities, component
  specifications.
• Academic partner low-birefringence SOI-based
  motherboard technology with additional AuSn
  hybrid integration technology.
• 6 The degree of reduction of duplication
• High all partners have complementary know-how,
  technologies and product portfolios.
• 7 The degree in which the access to the different
  parts of the equipment is facilitated
• Satisfactory Test-bed setup for SOI-motherboard
  devices possible, not been used so far.
• 8 The degree in which the facility or the
  complementary facilities are unique
• Satisfactory Unique amongst Silicon waveguide
  technologies Not unique when compared to other
  integrated optics technologies, such as
  Silica-on-Silicon.
• 9 The degree by which the activities lead to a
  stronger industrial position
• Medium Renewed commercial interest in D(Q)PSK.
  Very tight specifications. Commercial use not yet
  clear.

46
ContinuationNew activity JRA Hybrid
JRA7
hybrid
Effort to strengthen hybrid integration within
ePIXnet
JRA Hybrid
A1 Optical interface standardization
A2 Low cost precise Flip-chip technologies
A3 Thermal load limits in photonic integration

• Make use of following platforms
• InP
• CMOS Photonics
• Nano

47
JRA Hybrid
hybrid
A1 Optical interface standardization
Phot. Tech. Pool

• Hybrid integration mode mismatch _at_ optical
  interface
• Detailed interface characterization (mode size,
  mech. features)
• Move toward standardized interface (e.g. SMF 28)
• Demonstrate capability common interface
  technology
• Potential for low cost European technology

48
JRA Hybrid
hybrid
A2 Precise low-cost flip-chip technologies
laser diode
PLC

• study self-aligning flip-chip technologies
• AuSn, AgSn metallurgies
• complementary solder deposition techniques

49
JRA Hybrid
hybrid
A3 Thermal load limits in photonic integration

• SOA-based hybrid integrated devices
• Arrays of 2R MZI Regenerators

50
research targets
hybrid

• Strategy document Toward European modular
  hybrid integration platform (milestone)
• 1 combined test device from sub-activity A1
  (involving 2 technologies)
• Document Evaluation self-aligning flip-chip
  soldering technologies (milestone)
• Document Strategy to evaluate thermal limits in
  photonic integration (milestone)

51
partners and structure
hybrid
A1 Optical interface standardization (CIP,
IHT, IMEC, IZM, MESA, StA, TUB, TUe, Bookham,
LioniX)
A2 Investigation of low cost approaches to
precise flip-chip assembly (HHI, IZM, TUB)
A2 Thermal load limits in photonic integration
(CIP, HHI, IZM, TUB)
52
Detailed agenda
53
FAA3 Nanophotonic circuits in SOI with
CMOS-compatible technology
FAA3

• Coordinator Wim Bogaerts(wim.bogaerts_at_intec.ugen
  t.be)

54
FAA3
Design

• shared masks
• design library

Fabrication

• DUV lithography
• comparison with
• other techniques

Measurements

• compare measurements
• share facilities (JRE)

55
Research Highlights
FAA3

• Imaging of a Photonic Crystal resonance pattern
  by AFM (UT-MESA)
• Photonic Crystal waveguides 29dB/cm!!
  (St-Andrews)
• SOI Microring sensor for salt concentration
  (IMEC)
• 16-channel AWG, 200GHz

56
Research result
FAA3

• EPIX1 wafers fabricated August 2005
• EPIX2 wafers fabricated Febrary 2006
• EPIX3 wafers fabricated August 2006
• EPIX4 Call launched July 2006

57
Integration results
FAA3
?
?
?
?
?

• 7 Junior Researcher Exchanges done
• Addition of partner in Y1 AMO (nanoimprint)
• Facility Access used by 8 partners
• Innovative uses of DUV fabricated SOI!!!

?
?
58
Integration result
FAA3

• Vertical fiber couplers available for everyone
• Simple design rules Standard waveguide ends

59
Integration results
FAA3

• Standardisation of mask layout One cell size
• Maximum use of mask area
• Reuse of fiber couplers
• Standard alignment and wafer layout
• Reduction of overhead and errors

second mask
the third maskset
first mask
60
Integration result
FAA3

• Process comparison, a Joint FAA3 JRA1
  initiative

61
Reaction on comments
FAA3

• More efficient design cycle In the second year
  of FAA3, efforts to improve the
  design-fabrication cycle.
• Design library It proved very difficult to
  establish a design library in FAA3, mainly
  because of the variety of design software tools
  at the partners. For the Silicon Photonics
  Platform, we aim for a solution
• Process comparison The process comparison, set
  up by FAA3 and JRA1, has been slow to start up,
  but is being continued in year 3
• JREs The nature of the core activity of FAA3
  (fabrication of SOI circuits in IMEC) did not
  necessitate many exchanges. Still, Most JRE that
  took place in FAA3 proved useful.

62
Self assessment
FAA3

• 1 Research quality
• Good The devices fabricated in the context of
  FAA3 have generated a large amount of novel
  results, which is reflected in the number of
  publications. However, a considerable number of
  contributed designs did not yield any results.
• 2 Research Integration quality
• Very Good The facility access for fabrication of
  SOI components (and its associated cost-sharing
  model) makes it possible for many groups to have
  their designs made on a larger scale than would
  normally be possible with e-beam lithography.
• 3 The degree in which the facility is used by the
  other partners
• Very Good In the course of FAA3, 3
  design-fabrication cycles were completed, and a
  fourth is still ongoing. 7 partners made a total
  of 14 ePIXnet-contribution in the first 3 cycles,
  with 4 non-IMEC contributions in the fourth. This
  has led to 6 joint journal publications.
• 4 The degree in which the access is organised and
  documented
• Good With each call for designs, a document with
  guidelines and design rules was distributed. This
  document was regularly updated to reflect the new
  processing that was available to the contributors
  (e.g. requirements for compatibility with
  vertical fiber couplers). A useable design
  library compatible with the various design
  software used by partners did not materialize,
  but we provided additional designs for building
  blocks on request (e.g. how to design a good 3dB
  splitter).
• 8 The degree in which the facility or the
  complementary facilities are unique
• Very good IMEC has one of the few
  research-oriented high-end CMOS facilities in
  Europe, while having a strong research programme
  in photonics. Also, the cost model of operating a
  fab with industrial tools makes a facility access
  activity especially worthwhile. By joining forces
  with CEA-LETI, which has similar strengths as
  IMEC, the Silicon Photonics Platform will
  strengthen this activity even further.
• 9 The degree by which the activities lead to a
  stronger industrial position
• Very good The concept of FAA3 revolved around
  the fabrication of SOI photonic circuits with
  industrial tools. From an industrial point of
  view, Silicon Photonics is extremely attractive
  because of the possible compatibility with
  large-scale CMOS fabrication facilities.

63
Future Prospects 193nm lithography
FAA3

• 193nm lithography (under development)
• Better resolution, larger process windows

400nm pitch 200nm diameter no observable
proximity effects
350nm pitch 120nm diameter impossible with
248nm litho
64
Continuation
FAA3

• FAA3 will continue as
• The start of the Silicon Photonics Platform
• continue to provide facility access to CMOS
  facilities
• improve the processes
• Several new JRAs will use the Silicon Photonics
  Platform

65
JRA SOI modulator Route to develop high
performance compact silicon modulators
SOImod

• Coordinator
• Universidad Politécnica de Valencia
• Nanophotonics Technology Center (UPVLC-NTC)
• Pablo Sanchis (pabsanki_at_ntc.upv.es)

66
New Activity
SOImod

• Objective
• Development and comparison of different types of
  silicon modulators
• Define the optimum route to introduce high
  performance modulators in SOI circuits

67
Types of modulators
SOImod
All-Si multi-layer stack integrated in a
reverse-biased PIN diode (IEF, CEA-Leti)
Si-modulator based on the depletion of a pn
juntion (U. Surrey)
Si modulator based on strain (COMDTU)
68
Research targets
SOImod

• Development of optimum patterning processes
• E-beam
• Deep-UV lithography
• Development of electrode deposition processes
• Report of the optimum route to introduce high
  performance modulators in SOI circuits
• Insertion losses from fiber to fiber lower than
  15 dB
• Speed operation up to 26 GHz

Integration targets

• Junior/senior researchers exchanges
• Inter-JRA exchanges
• Joint publications

69
Workplan Partners
SOImod
70
JRA SOI-Passive Passive nano- and
micro-photonic SOI circuits
SOIpassive

• Coordinator Peter I. Borel (pib_at_com.dtu.dk)
• Group COM/Hvam

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New activity
SOIpassive
Relations to JRA1 and FAA3
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Research targets
SOIpassive

• Push the performance limits for passive SOI
  structures
• Ultra low-loss PhCWs and photonic wire structures
• PhC structures with low loss in the slow-light
  regime
• High-Q cavities
• Compact wavelength selective components PhC/PW
• Photonic structures with non-regular/chirped unit
  cells,
• Waveguide transitions and injectors,
• PhC structures with high filling factors for TM
  PBG
• PW Bragg grating structures including coupled
  cavity formats with slowing for the group
  velocity
• Sidewall roughness estimation

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Research targets
SOIpassive
Benchmark EBL, DUV, NIL and FIB
NIL structures fabricated at MIC and COMDTU
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Integration Targets
SOIpassive

• Joint design, modelling, fabrication and
  characterisation efforts
• Synergy and eliminate double efforts
• Junior and senior exchanges
• Inter-JRA exchanges
• Compare, document and share optimised fabrication
  procedures
• Joint publications
• Future collaborations

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Partners structure
SOIpassive

• COMDTU/Hvam FDTD, TopOpt, Proxecco, EBL, ICP,
  SEM, AFM, end fire, PhC, PW, slow light
• IMEC DUV, design library, fibre couplers, end
  fire, PW, AWG
• StA EBL, Si and SiO2 etch, PhC membranes, slow
  light
• UPVLC-NTC FDTD, PWE, EBL, etch, AFM, PhC, PW,
  slow light, high Q
• ETHZ NanoPECS, EBL, end fire, TM PBG
• AMO Proxecco, EBL, supercritical resist drying,
  ICP, NIL, PW, PhC
• KTH FDTD, AOI, PECVD, EBL, dry etching, end
  fire, PhC, PW, slow light, high Q
• GLASGHU Proxecco, EBL, resist treatment, dry
  etching, smoothing
• Platform connections
• Silicon Platform
• Nano Platform
• Modelling Platform
• Inter-JRA connections
• JRA NIL
• JRA FIB
• JRA PhC infiltration
• JRA SOI-Modulator

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FAA5 Access to characterizationfacilities for
ultrafast photonicswitches
FAA5

• Coordinator Michael Först(foerst_at_iht.rwth-aachen
  .de)

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Research Highlights
FAA5

• Sub-ps cross phase modulation (XPM) in SOI
  waveguide
• Ultrafast intensity modulation by wavelength
  filtering
• Organic hybridization of trenched SOI microrings
  for Kerr-induced resonance switching
• Carrier-based all-optical modulation in
  ion-implanted SOI microring resonators

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Research Results
FAA5

• Scientific results
• Sub-ps cross-phase modulation (XPM) in straight
  SOI waveguides and sub-ps all-optical modulation
  if combined with microring resonator as
  wavelength filters
• gt5 Gbit/scarrier-induced all-optical switching in
  ion-implanted SOI microring resonators
• Organically hybridized slot-ring resonators
• Modelling at partners for analysis
• Nonlinear pulse propagation in bus and ring
  guides

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Integration Results
FAA5

• Devices fabricated by partners
• Microring resonator as wavelength filters
  (UT-MESA, AMO)
• Trenched microring resonators (AMO, RWTH)
  hybridized with organic nonlinear material (CNR
  Bologna)
• Ion-implanted SOI microring resonators (AMO,
  RWTH)
• Modelling at partners
• Publications
• 6 Journal papers (2 joint)
• 16 Conference / Workshop contributions (9 joint)
• Junior Researcher Exchanges (year 2)
• Two JREs from UT-MESA and IREE joint publication
• Durable JRE between AMO and RWTH for device
  fabrication and measurements

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Most valuable outcome
FAA5

• Strong networking between European partners
• Collaboration between FAA5 partners established
  in first two years
• CNR-ISMN Bologna will join ePIXnet in years 34
• AMO and RWTH will strengthen research on active
  SOI resonators in the frame of FP6-STREP project
  (starting in Sept. 2006), also joined by new
  ePIXnet member University of Surrey
• Future activities within ePIXnet
• UT-MESA will coordinate additional JRA Compact
  integrated optical sensors
• AMO will coordinate additional JRA Nanoimprint
  lithography
• Scientific result
• Ultrafast SOI microring all-optical switch based
  on plasma dispersion effect ??scalable to higher
  speeds

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Reaction on comments
FAA5

• The number of partners using this facility is
  (still) rather small.
• There might have been a misunderstanding between
  the statement given within the activity
  presentation and the Reviewers. In fact, partners
  within the FAA5 activity have been frequently
  using the femtosecond characterization facilities
  at RWTH Aachen. Measurements have been realized
  within JREs. Besides a variety of samples, which
  were designed in collaboration with all FAA5
  partners, were fabricated at AMO and RWTH and
  then measured at the facility outside of a JRE
  note here the close distance between the two
  partners.
• However, it is fact that the facility has not
  been used by members of the ePIXnet consortium,
  which are outside the FAA5 activity. To tackle
  this issue, the facility description was
  published on the ePIXnet website easily
  accessible by all partners. Beyond, RWTH Aachen
  will join the IT platform High speed
  characterization platform in the second stage of
  the ePIXnet NoE.
• Do the tested devices have the agreed complexity
  and sub-picosecond performance?
• In the first year of the activity, a lot of
  efforts have been taken for preliminary work.
  Although the RWTH Aachen facility has strong
  expertise in femtosecond spectroscopy (gained
  within more than ten years), it is a challenging
  task to carry out these experiments on a Silicon
  chip. Therefore, rather simple device structures
  were investigated in the period M1-M12.
• In the second year, the complexity of the devices
  was drastically increased. Hybridized microring
  resonators were fabricated and analyzed,
  microring resonators were ion-implanted to reduce
  free carrier lifetimes, and even sub-picosecond
  switching was observed in a combined
  waveguide-microring device. For details, we refer
  to Deliverable 11.2.
• Who developed the simulation tool to solve the
  nonlinear Schrödinger equation?
• This simulation tool was developed in a
  collaboration between partners at UT-MESA and
  IREE. UT-MESA focussed on the propagation of
  short optical pulses in a straight waveguide,
  while IREE developed a numerical model for
  nonlinear propagation of an optical pulse in a
  microring resonator coupled to one or two bus
  guides. For details we refer to the poster
  presentation provided at the 2nd Annual Meeting.
• No SREs are scheduled
• Unfortunately, this issue could not be solved in
  the second year of the activity. Although there
  were a very few visits between senior researchers
  (M. Först visited UT-MESA for preparation of a
  paper manuscript, all senior researchers involved
  met durin g an activity meeting in Aacehn), no
  SRE of longer duration could be realized.
• The new JRA SOI nonlinear where all FAA5
  partners will be involved, will have to find a
  solution to facilitate SREs. SREs are planned
  within this JRA also in collaboration with other
  activities (see Description of Work).

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Self assessment
FAA5

• 1 Research quality
• Very good sub-picosecond all-optical switching
  could be demonstrated on a silicon chip,
  all-optical switching could be demonstrated in
  ion-implanted microring resonators (which is a
  novel approach not demonstrated in literature),
  hybridized photonic devices were realized
  (inorganic photonic structure combined with
  highly nonlinear optical materials)
• 2 Research Integration quality
• Very good the activity benefits from the
  involvement of partners with complementary
  know-how in the fields of modelling, fabrication
  and characterization
• 3 The degree in which the facility is used by the
  other partners
• Satisfactory the facility has been frequently
  used by partners within the activity, however no
  ePIXnet partners outside FAA5 were interested in
  sub-picosecond analysis of devices
• 4 The degree in which the access is organised and
  documented
• Good available femtosecond laser sources and
  measurement techniques are published on the
  ePIXnet website, more detailed presentations have
  been given at activity meetings in the 1st and
  2nd year facility was readily prepared for JREs
  and measurement batches yielding very good
  scientific results
• 8 The degree in which the facility or the
  complementary facilities are unique
• Very good the facility provides experimental
  setups to carry out femtosecond spectroscopy on a
  silicon chip ? very unique
• 9 The degree by which the activities lead to a
  stronger industrial position
• Satisfactory the research goals targeted within
  the activity are characterized as a high-risk
  approach (hybridization, implantation) the work
  carried out is of a rather exploratory character
  relevant for future applications in optical
  networks nontheless a STREP project could be
  created involving two partners of the FAA5 and,
  among others, two further European companies

83
Continuation New activity
FAA5
SOINonLin

• Nonlinear integrated SOI nanophotonic devices
• Objective
• Improvement of device performances
• beyond the state-of-the-art

84
Research targets
SOINonLin

• Exploitation of nonlinear effects in Silicon
  nanophotonic waveguide devices
• Fundamental aspects of Raman gain and ?(3) Kerr
  effect for ultrafast light amplification,
  modulation and wavelength conversion
• Exploit femtosecond pulses with extremely high
  peak-intensities
• Confine light in resonant cavity (1D Fabry-Perot
  and 2D microring resonators) devices to enhance
  nonlinear device performances
• Approach
• Optimize broadband fiber-to-waveguide coupling
  with respect to efficiency, reliability, and
  long-term stability
• Increase nonlinear Kerr-effect by hybridization
  of trenched Si waveguides with nonlinear
  materials
• Reduce nonlinear losses in waveguides (free
  carrier absorption) by decreasing free carrier
  lifetimes for cw-operation (e.g. Raman Laser)

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Integration targets
SOINonLin

• Foster collaboration with additional ePIXnet
  partners
• and instruments
• IMEC will join this activity with its know-how on
  simulation, design and fabrication of SOI
  photonic devices
• Interaction with other ePIXnet JRAs
• JRA Infiltration will provide technology for
  hybridization of inorganic SOI devices with
  nonlinear materials
• JRA SOI circuits will address design and
  fabrication of low-loss high-Q waveguide
  resonator devices
• Benefit from services provided by the ePIXnet IT
  platforms
• Integration within this JRA
• Exploit synergetic effects by sharing different
  know-how of involved partners
• Frequent activity meetings to strengthen
  collaboration
• Researcher Exchanges

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Partners structure
SOINonLin

• Partners
• RWTH Aachen Coordination, design, device
  modification (ion-implantation, Si nanocrystal
  deposition), nonlinear analysisAMO Device
  fabrication via EBL and/or UV Nanoimprint
• IMEC Simulation, design and fabrication of SOI
  photonic devices
• IREE Prague Modelling of nonlinear pulse
  propagation
• UT-MESA Design, modelling, cw-characterization
• PlatformsSilicon Photonics Platform
• High-Speed Characterization Platform
• Hybrid Photonic Integration Platform