Diapositive 1

1
Task 4.15 Wafer scale benchmarking of 50 nm
features in imprint lithography

• Objective comparison of the different processes
  and equipments of hot embossing and UV-NIL at the
  wafer scale in 50 nm features
• Hot embossing / full wafer printing
• 100 mm TASC, PSI, MIC, CNM
• 200 mm LETI, LTM
• Step and repeat hot embossing VTT
• Step and repeat UV-NIL LTM, LETI, VTT (?)
• Hybrid process LU
• Mold design NPL, LETI
• Characterization Tyndall, LTM

2
Planning

• Deliverable D4.21 at M36 March 2007
• Delivery of the molds during the Glasgow meeting
  September 11th
• Imprint processes until end of October
• November 1st wafers sent to Tyndall and LTM for
  characterization
• November and December characterization, and
  eventually new imprints if needed
• January characterization of the new imprints
• February redaction of the deliverable

Mold fabrication
Imprint 1
Redaction
Characterization Imprint 2
Characterization
3
Mold fabrication in LETI

• Si wafers 100mm (and 200 mm for LTM-LETI)
• E-beam lithography in NEB22 resist
• thickness after development 100 nm for 50 nm
  resolution
• Etching on LAM equipment in LTM
• etching depth 100 nm (limited by the small
  resist budget)
• Wet deposition of the anti-sticking layer
  Optool
• Quartz molds for UV-NIL E-Beam lithography on
  100 mm quartz wafers
• Resolution we will try to achieve 50/50 but with
  no guarantee
• 50/100 nm already achieved
• VTT what is the mold size and thickness for the
  stepper?
• LU What molds do you need?
• The molds will be given back to LETI after the
  benchmarking

4
NIL process Hot embossing

• PSI Jenoptik HEX03 TASC Weber press
• MIC EVG520HE (100mm) LETI/LTM EVG520HE (200mm)
• CNM Obducat VTT step and repeat on NPS200
• LU Obducat (process has to be precised)
• Imprints 1
• - Two wafers with the best process achievable
  each partner chooses the resist, its thickness
  and the process parameters, but the rule is to
  try to minimize the residual thickness
• Two wafers with the mr-I7010 using a 100 nm film
• Imprints 2 depending on the characterization
  results

5
NIL process UV-NIL

• LTM imprints on the EVG NIL-Stepper (the
  installation is just finishing)
• Material NILTM105 or AMONIL
• VTT which materials do you use?

6
Mold layout
Limitation exposure time since LETI has to
produce 5 100mm molds and 1 200mm mold, but it is
important that all the molds are fabricated in
the same place with the same process
1 mm² lines 50/50 nm
Line gratings with various densities 100/100,
100/200, 100/500 Surface1mm x 200µm for each
grating
T- Lines 100/100 Line length 500 µm 50 periods
Pb charac Tyndall 3x1 mm Or 0.5x1.5 mm
Mold depth 100nm
7
Characterization Tyndall and LTM

• Scatterometry
• LTM ellipsometer spot size 20µm, but only for
  non contaminated wafers only for the 200 mm
  wafers
• We have also a ellipsometer for contaminated
  wafers, but the spot size is 2x2mm
• Tyndall ellipsometer spot size 1x3 mm but could
  be reduced to 0.5x1.5mm
• If the grating area is large enough, the spectra
  will be recorded in Tyndall and LTM will help for
  the fit and analysis.
• Problem 0.5x1.5mm spot size printed grating
  1x2 mm !!
• Is it achievable by LETI? If yes, only for one
  structure size. Is 1x2mm large enough to get rid
  of the border effect?
• Conclusion is there someone having an
  ellipsometer with a smaller spot size?
• MEB will be very useful but not for all the
  materials for example, it is very difficult to
  measure precisely the residual thickness in
  mr-I7010 for charging reasons.

8
Scatterometry
CD, hi and hr measured in 50 nm lines Error
parameter to indicate if the fit is good
enough Error gt 1 non uniform hi or hr
Morphology we can characterize the slope in case
in case of non vertical lines, but the
calculation is longer / no information on the
roughness
9
summary

• If we are able to produce the molds for the next
  NAPA meeting, and if everybody is able to respect
  the planning, we should have nice results for
  next march!!