Ge nanostressors on silicononinsulator SOI

1
Ge nanostressors on silicon-on-insulator (SOI)
Discovered that a quantum dot crystal can exert
enough stress to bend the underlying Si template
layer in SOI, and cause the oxide to flow.
Molecular dynamics simulations confirm the
bending. Implications for nanoflow of amorphous
materials, electronic properties of locally bent
Si (local valley splitting), membrane
electronics
Feng Liu, et al., Nature 416, 498 (2002), PRL 89,
126101-1 (2002)