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SOI Detector

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SOI Detector (1) Mateusz Baszczyk, Piotr Dorosz, Sebastian G b, Wojciech Kucewicz, ukasz Mik, Maria Sapor (2) Imran Ahmed, Tomasz Fiutowski, Marek Idzik, Jakub ... – PowerPoint PPT presentation

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Title: SOI Detector


1
SOI Detector
(1) Mateusz Baszczyk, Piotr Dorosz, Sebastian
Glab,Wojciech Kucewicz, Lukasz Mik, Maria
Sapor (2) Imran Ahmed, Tomasz Fiutowski, Marek
Idzik, Jakub Moron (3) Piotr Kapusta
(1) Department of Electronics, (2) Department of
Particle Interaction and Detection Techniques AGH
University of Science and Technology, Al.
Mickiewicza 30, 30-059 Krakow, Poland (3)
Institute of Nuclear Physics Polish Academy of
Science Radzikowskiego 152, 31-342 Krakow, Poland
2
Agenda
  • Chip topology
  • Pixel circuit
  • Band Gap voltage source
  • Analogue to digital converter
  • Digital library
  • Summary
  • Future work.

3
Assumptions
  • Detector has to work but its parameters are not
    so important.
  • Pixels with CDS and rolling shutter readout
    scheme.
  • Possibility to measure wafer temperature.
  • Functional 10 bit ADC with parallel data output
    (LVDS).
  • We will take part in July submission.

4
Chip layout
  • Detector has 32 pix x 32 pix
  • Two slightly different layouts of pixel
  • Two Band Gaps
  • Two 10 bit SAR ADCs
  • Differential voltage signal.

5
Chip
6
Pixel
Designed by Piotr Kapusta
7
Pixel layout (30 um x 30 um)
Designed by Piotr Kapusta
8
Negative temperature coefficient
Forward voltage of p-n junction VBE has negative
TC.
Temperature exponent of mobility
Thermal voltage
Bandgap energy of silicon
With VBE 750 mV, T 300 K
9
Positive temperature coefficient
It was recognized in 1964 that if two bipolar
transistors operate at unequal current densities,
then the difference between their base-emitter
voltages is directly proportional to the absolute
temperature.
10
Band Gap
11
Band Gap (280 um x 425 um)
12
Band Gap (cold diode model)
13
Band Gap (hot diode model)
14
ADC (theory)
VIN
-
111 110 101 100 011 010 001 000
VDA
Vin
DAC
SAR
SAR register 100 110 111
110
Bn-1 Bn-2 B0
Shift register
15
ADC
Designed by Marek Idzik and Tomasz Fiutowski
16
ADC (100 um x 400 um)
Designed by Marek Idzik and Tomasz Fiutowski
17
Sampling circuit with bootstrap
Designed by Marek Idzik and Tomasz Fiutowski
18
Sampling circuit with bootstrap
M. Dessouky, A. Kaiser, Input switch
configuration suitable for rail-to-rail operation
of switched opamp circuits Elect. Lett., vol.
35, no. 1, pp. 8-10, Jan. 1999.
19
Sampling circuit with bootstrap
M. Dessouky, A. Kaiser, Input switch
configuration suitable for rail-to-rail operation
of switched opamp circuits Elect. Lett., vol.
35, no. 1, pp. 8-10, Jan. 1999.
20
Sampling circuit with bootstrap
Designed by Marek Idzik and Tomasz Fiutowski
21
9 bit DAC (segmented)
Designed by Marek Idzik and Tomasz Fiutowski
22
Dynamic comparator
Designed by Marek Idzik and Tomasz Fiutowski
23
Dynamic comparator
Designed by Marek Idzik and Tomasz Fiutowski
24
Delay based on thyristor
Designed by Marek Idzik and Tomasz Fiutowski
25
Delay based on thyristor
Designed by Marek Idzik and Tomasz Fiutowski
26
Digital library
94 Cells (81 completed, 13 missing
layout). Adders, AND, AndOrInvert, Buffer,
Buffer with Enable, Tristate Buffer, D
Flip-Flops,D Latches, INV, JK Flip-Flops,
Multiplexers, NAND, NOR, OR, T Flip-Flops, XNOR,
XOR.
27
DigitalLib
  • Two libraries Gates and DigitalLib.Gates
    contains parameterized symbols and is used to
    draw schematics of DigitalLib.
  • HDF_DYNAMIC and DF_DYNAMIC were drawn by Tomasz
    Fiutowski. These cells have different layout
    constraints.MESH is a template for layout
    drawing.
  • These cells do not have layout D Flip-Flops with
    Enable,all JK Flip-Flops, most of T Flip-Flops.
  • All cells have passed simulation, DRC and LVS
    test. But I do not give any guarantee for correct
    operation of digital circuit you must test it
    by yourself!!!

28
Conclusions
  • We have designed first SOI detector in Lapis
    technology. It is starting point for further
    improvements
  • Simulation results have shown correct operation
    of ADC and Band gap voltage source
  • Digital library containing low height cells was
    made(not tested yet)

29
Future work
  • IC will be measured immediately after
    shipment.It is possible to use SeaBoard as
    acquisition system.
  • We plan to use column ADC to increase readout
    speed. Due to large amount of digital data we
    will design serializer and phased locked loop.
  • We would like to take part in January MPW run.

30
Thank you for your attention
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