Title: Operational Characteristics of
1Department of Electronic and Electrical
Engineering
Operational Characteristics of Vertical Cavity
Surface Emitting Lasers (VCSELs) with laterally
non-uniform parameters T.C. Woo, J. Sarma, F.
Causa
Acknowledgements ORS and University of Bath
Scholarship
2Department of Electronic and Electrical
Engineering
Operational Characteristics of Vertical Cavity
Surface Emitting Lasers (VCSELs) with laterally
non-uniform parameters
T.C. Woo, J. Sarma, F. Causa
Acknowledgements ORS and University of Bath
Scholarship
3Present-Day VCSELs Oxide Apertured VCSELs
Schematic of Oxide Apertured VCSEL
- Largely homogeneous medium with no built-in
lateral index guiding. - Traditional modal field analysis not readily
applicable. - Optical field profile best described by
diffraction-type analysis. - Oxide aperture provides both current and optical
confinement. - Non-uniform refractive index profile ?(r,?,z) due
to joule heating (cavity) and carrier (active
layer).
4Optical Field Profile
- Scalar wave equation Field distribution in the
laser cavity obtained by solving the following
scalar wave equation
(1)
Total field expansion
(2)
(3)
- where exp(-jpz) Fast varying
longitudinal phase term - Laguerre-Gauss (LG) Functions ?km(r)
(4)
- Slowly varying F(r,?,z) expanded in terms of LG
functions where Lkm(r) is the generalised
Laguerre polynomial and Cmk the corresponding
normalisation constant. - LG functions are complete and discrete set.
- Suitable in describing
- weakly diffracting fields in homogeneous medium
- waveguide-like fields in laterally inhomogeneous
medium.
5Field Propagation in Inhomogeneous Medium
- Representing axial(z) dependence of refractive
index as piecewise constant segments
?(r,?,z)?q(r,?) where zq lt z lt zq1 - Field propagation in each segment described by
paraxial wave equation
(5)
where (5) obtained using eqns (1)-(3), and
satisfies the paraxial approximation
(6)
Initial Value Problem
- A set of coupled ordinary differential equations
for field propagation in each segment obtained
using (2)-(5) and LG orthogonal condition
(7)
where ? r/w and ?i(?) contains ?q(r,?)
6LG Collocation Method
- Discretises radial (r) axis, rt taken as zeros of
Nth order Laguerre polynomial
(8)
- Transforms integrations in (7) into matrix
multiplications using Gaussian Quadrature Formula
(9)
Eigenmode Solutions for (Arbitrary) Index Guided
Structure ? Separated Variable Analysis
- For index guided structure, F(r,?,z) F(r,?) in
(3). - Hence (7) reduces to the following eigenvalue
problem
(10)
where, now, p corresponds to the eigenvalue,
i.e. propagation constant of
corresponding eigenmode.
7Eigenmode Solution for Lateral Index Guiding
Structure
?1 3.5, ?2 3.496, a 5um
- Exponential Index Profile
8Initial Value Problem Analysis Diffraction in
Homogeneous Medium
- The solution of paraxial wave equation (5) in
homogeneous medium is Laguerre-Gauss Beam. - Field profile obtained using LG function
expansions compared with LG Beam at different
propagation length L.
Matching of the diffracted field profile (IVP)
with the LG beam (LGB) in a homogeneous medium at
propagation distances of 10?m, 20?m and 30?m.
Propagation in Index Guided Medium
- Single mode step index fibre with ?? 0.01 and
radius 0.5?m.
Comparison of computed field intensity profile at
different propagation distances with LP01 mode
(squares) of a step index fibre. Field matches
and stabilises after 20?m length.
9Resonant Cavity Finite Mirrors with Unity
Reflectivity
- Using Fox and Li approach to find the
lowest-order resonator transverse mode.
Resonant cavity length L 1?m, end mirror radius
r 2?m and reflectivities R1 R2 1
Field intensity plot for initial(z0) and final
field(zL) for the last 10 round-trips(391-400)
- After 400 round-trips, field converges in form to
the lowest order eigenmode of the resonator. - Truncation of field at finite end mirrors shapes
the resonant field profile. - Larger mirror radius ? no. of round-trips ?
10Self-Consistent VCSEL Model
- Carrier Distribution N(r) in active layer
- Carrier Diffusion Equation
- LG function expansion for carrier density
- Boundary condition
- Optical Intensity P ? F(r,z) 2
- Hole-burning effect modifies carrier distribution
(11)
11Carrier Distribution in Active Layer
- Self-consistent carrier distribution solved in
iterative manner using LG Collocation Method. - Uniform current injection (J) with disc contact
radius(A).
Plot of carrier distribution with varying contact
radius (A2-5um), diffusion coefficient
Dn5cm2s-1.
Plot of carrier distribution with varying
diffusion coefficient (Dn5-10 cm2s-1), disc
contact radius A5um
Constants J 10kA/cm2, Br 10-10 cm3s-1, N0
1x1016cm-3, d 0.5um
12Oxide Apertured VCSEL Characteristics
Schematic of oxide apertured VCSEL L 1.46um, d
0.25um, A 2um, R1 R2 0.9995, J 2kA/cm2
13Index Guided VCSEL Characteristics
Schematic of index guided VCSEL L 1.46um, d
0.25um, A 2um, R1 R2 0.9995, J 2kA/cm2 ,
?1 3.4, ?2 3.39
14Conclusions
- A versatile model for VCSEL was developed using
Laguerre-Gauss Function Expansion. - LG Collocation Method applied in eigenvalue
problem for index guided structure gives very
accurate results. - Flexibility of LG functions in describing field
diffraction/propagation in both homogeneous and
inhomogeneous medium has been demonstrated. - A self-consistent model for active VCSEL
structure with or without lateral index guiding
has been developed.