The%20BABAR%20Silicon%20Vertex%20Tracker - PowerPoint PPT Presentation

About This Presentation
Title:

The%20BABAR%20Silicon%20Vertex%20Tracker

Description:

The BABAR Silicon Vertex Tracker. Douglas Roberts. University of ... UBE Industries Ltd, Japan. 4.5 m Cu layer deposited on an adhesive 150nm Cr layer ... – PowerPoint PPT presentation

Number of Views:46
Avg rating:3.0/5.0
Slides: 40
Provided by: hep
Category:

less

Transcript and Presenter's Notes

Title: The%20BABAR%20Silicon%20Vertex%20Tracker


1
The BABAR Silicon Vertex Tracker
  • Douglas Roberts
  • University of California, Santa Barbara
  • BABAR Collaboration

2
Outline
  • BABAR and PEP-II Design and Physics Goals
  • Silicon Vertex Tracker (SVT) Design
    Considerations
  • SVT Description
  • Layout
  • Silicon Wafers
  • Upilex Fanouts
  • Readout Electronics
  • Front End IC (AToM Chip)
  • Hybrid and Tails
  • Mechanical Support
  • Assembly and Testing
  • Prelim. Results From Recent System Test and Beam
    Test
  • Project Status

3
BABAR SVT Collaborators
  • Italy
  • INFN, Ferrara
  • INFN, Milano
  • INFN, Pavia
  • INFN, Pisa
  • INFN, Torino
  • INFN, Trieste
  • U.S.A.
  • U.C., San Diego
  • U.C., Santa Barbara
  • U.C., Santa Cruz
  • Lawrence Berkeley National Laboratory
  • Stanford University
  • U of Wisconsin

4
BABAR Physics Goals
  • International collaboration of 530 physicists
    and engineers from 10 countries
  • Primary physics goal of the BABAR experiment is
    the systematic study of CP asymmetries in the
    decays of B0 and B0 mesons.
  • Reconstruct one of the B0 mesons in an exclusive
    CP-study final state
  • Tag the flavor of the other B meson in the event
  • Measure the relative decay time of the two B
    mesons.

B0,zCP
ee- ????(4s),?? 0.56
5
BABAR Physics Goals (cont.)
  • Standard Model predicts a time-dependent CP
    asymmetry
  • Time integral of Af(t) 0 at ?(4s), which makes
    a measurement of the time dependence essential
  • Reason for asymmetric collider
  • Good vertex determination extremely important

6
PEP-II at SLAC
  • Asymmetric ee- collider
  • E- 9.000GeV, E 3.109GeV
  • L 3.0 x 1033 cm-2 s-1 , ultimately 1034.
  • 30M BB/107s
  • Time between beam crossings 4.2ns
  • 0? crossing angle
  • Final focus dipoles 20cm from IP
  • Very little space for SVT readout electronics

7
SVT Design Considerations
  • Vertexing Requirements
  • Mean vertex separation of 250?m ???want single
    vertex resolution better than 80?m.
  • Readily achieved with silicon strip detectors
  • Acceptance
  • Want as close to 4? as possible
  • Magnets at 17.2?, both forward and backward
  • Boost makes forward region very important
  • Move most manifolds and flanges to the rear
  • Coverage from 20? lt ? lt 150?.
  • In center-of-mass, 0.84 gt cos?cm gt-0.95
  • All electronics outside of active tracking volume
  • Stand-alone tracking
  • Drift chamber begins at 22.5cm, so need to
    reconstruct particles with pt lt 100MeV in SVT
    alone.
  • Radiation Tolerance
  • Layer 1 averages 33 krad/yr
  • Non-uniform in ?
  • Local max of 240 krad/yr for 6?

8
SVT Layout
  • 5 Layers of double sided AC coupled silicon
    microstrip detectors
  • Inner 3 layers have six modules arranged
    azimuthally around the beampipe
  • Outer 2 layers have 16 and 18 modules,
    respectively.

9
SVT Layout (cont.)
Kevlar/Carbon Fiber Support Structure
Hybrid
Carbon Fiber Support Cone
Silicon
350mr
30?
Beam Pipe (1 X0)
  • Each layer has strips oriented parallel (?
    strips) and perpendicular (z strips) to the beam
    line
  • Total of 340 silicon wafers of 6 different types
  • About 0.94m2 of silicon
  • 150,000 readout channels

10
SVT Layout (cont.)
End View of BaBar Silicon Vertex Detector
11
Silicon Wafers
  • 6 different wafer models
  • Wafers manufactured by Micron
  • Made of 300?m thick high resistivity silicon with
    a 111 orientation

12
Silicon WafersMechanical Specifications
  • Physical Strip Pitch includes floating strip
    (strips not connected to readout electronics)
  • Models I, II and III have ??strips on the ? side
    Models IV, V and VI have ? strips on the J side
  • ? strips on wedge detector vary such that the
    ratio between width and pitch is a constant

13
Model II Wafer, ?-Side (?)
14
Model II Wafer, J-Side (z)
15
Model VI Wafer (wedge),J-Side (?)
16
Summary of Measured Wafer Parameters
  • Quantity
  • Rbias
  • Vdepl
  • Ibias
  • CIS
  • CAC
  • Cback
  • Rs (implant)
  • Rs (metal)
  • Radiation Damage
  • Value
  • 5 M? (varies)
  • 15-40 V
  • lt100nA/cm2
  • 1 pF/cm
  • 20-40 pF/cm
  • 0.2, 0.4 pF/cm
  • 27, 55 k?/cm
  • 7, 13 ?/cm
  • 300 nA/cm2/Mrad

Depends on model number
17
Upilex Fanouts
Layer 2 Fanouts
Z Fanout
Testing Area
? Fanout
  • Provide an electrical connection between the
    metal strips on the silicon wafers and the
    front-end chip
  • Gang together z strips on outer 2 layers (2
    strips read out by same electronics channel)
  • Testing area allows for testing before readout
    electronics are attached

18
Upilex Details
  • 50?m thick Upilex substrate
  • UBE Industries Ltd, Japan.
  • 4.5?m Cu layer deposited on an adhesive 150nm Cr
    layer
  • Cu and Cr are etched to create circuit
  • 150nm of Cr followed by 1?m Au (for wire bonding)
    are then electrolithically deposited
  • Trace resistance is typ. 2?/cm
  • Inter-trace capacitance 0.52pF/cm

19
Front-end IC(AToM Chip)
  • Must amplify, shape and digitize input in
    parallel for all channels
  • Buffer for duration of Level 1 trigger latency
  • Sparsify data for readout
  • High rates and small time between beam crossings
    (4.2ns) implies data acquisition, digitization,
    buffering and readout must occur simultaneously

20
Photo of Rad-Soft AToM
????????? 128 channels
21
Shaper Output
  • Shaping time set to 100ns (setable to 100, 200,
    300 or 400ns)
  • Charge injected via on-chip calibration circuitry

22
Time-Over-Threshold Output
  • Comparison of analog ToT measured at comparator
    output and digitized ToT

23
Expected Noise Performance
  • Based on full SPICE simulation
  • Front-end circuit
  • Detector network based on measured detector
    parameters
  • Upilex fanout

24
Test Bench ResultsLayer 2 Module
  • Test bench consists of prototype of full SVT
    readout system
  • Silicon Upilex
  • Rad-Soft AToM chip and Hybrid
  • Prototype data transmission and DAQ

Threshold Scan
Decreasing Threshold
Firings/(50 events)
Threshold (DAC cnts)
Firings/(50 events)
Threshold (DAC cnts)
25
Test Bench ResultsLayer 2 Module
Measured Offsets and Gains for 2 ICs
26
Test Bench ResultsLayer 2 Module
Noise (in DAC counts) Measured from Threshold
Scan
? Side ENC???1070 e- (calc 880 e-)
J Side ENC???860 e- (calc 600 e-)
27
Hybrid
  • Double sided, multi-layer, thick-film circuit
    fabricated on 1.2mm thick AlN
  • 3 Different Models
  • H1 (Layers 1 and 2) has 7 ICs/side
  • H2 (Layer 3) has 10 ICs/side
  • H3 (Layers 4 and 5) has 4 ICs on ? side, 5 on z
    side
  • Connects to power and data transmission system
    via flexible multi-layer kapton/copper tail (2
    per hybrid)

28
Hybrid Pictures
Component Layout of H1 (Layers 1 and 2) with 7
ICs per side
Photograph of H3 prototype (Layers 4 and 5)
29
Mechanical SupportRibs and Foot
Layer 2 Rib and Endpiece Assembly
Exploded View of Foot Region
CF Endpiece
Kevlar/CF Ribs
Berg connector and tails
Cooling Ring
Silicon
UpilexFanouts
AToM IC
AlN Hybrid
30
Mechanical Support
  • Modules mounted on brass cooling rings, which are
    mounted on carbon fiber support cones
  • Forward and Backward cones held together with
    carbon fiber space frame
  • Entire assembly mounted on B1 magnets (final
    focus RE dipoles)

31
Finished Space Frame
32
Module Assembly and Testing
? Side
Layer 2 Half-Module in Ringframe
fixture. Upilex testing area still attached.
z Side
33
Testing Probe
  • Automated probe for testing modules before
    readout IC is attached
  • Uses 256-pin probe array to contact testing area
    on Upilex fanout
  • Connects to pA meter / Voltage source, LCR meter,
    single channel Q-amp

34
Attachment of Hybrid
  • Upilex testing area is removed
  • Hybrid is attached to Upilex
  • Still utilizes same ringframe fixture

35
Module Stiffening
Gluing carbon fiber / Kevlar ribs to a Layer 2
Module
Finished Module after rib attachment(upside-down)
36
Arch Module Assembly
  • Module is assembled flat
  • Wafer-to-wafer gluing (except at bend)
  • Upilex fanout glued to silicon
  • Wirebonding and testing
  • Attachment to hybrid
  • Bend angles vary from 21? to 28?
  • Bending operation done on three fixtures that
    simulate the positions of the support cone
    mounting buttons
  • Defines rotation angle and axis
  • Stiffening ribs attached after bending is
    complete.

37
Prelim. Testbeam Results
  • CERN testbeam run with prototype layer 2 and
    layer 5 modules
  • Just finished data taking Monday, Aug. 25
  • All results are VERY PRELIMINARY
  • Chip calibration not done.
  • No alignment corrections made

Correlation between projected track position and
hits in the SVT module
PRELIM
38
Prelim. Testbeam Results
  • Position correlation vs. angle of incident track.

PRELIM
39
Project Status
  • Many mechanical parts fabricated support cones,
    space frame, ribs, endpieces...
  • Silicon wafer production underway all 6 models
    perform as expected
  • 60 of wafers already delivered from Micron
  • System test has verified a working readout system
    with reasonable noise performance
  • Final version of AToM IC has been submitted for
    rad-hard fabrication expect chips in Dec.
  • First Layer 2 and Layer 5 modules have been
    constructed
  • Goal for installation End of 1998
Write a Comment
User Comments (0)
About PowerShow.com