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Summary

• Last Developments for Failure Analysis
• Control of etch profile (isotropic
  anisotropic),
• Selective etching of SiO2 versus TiN and
  silicon,
• Electrical functionality for Cu technology,
• Layer display in microsections,
• 9 metal level deprocessing.

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Control of Etch Profile
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Selective Etching
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Electrical Functionality for Cu Technology
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Layer Display in Microsections
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9 Metal Level Deprocessing
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Summary

• Precise control of ion energy to adjust etch
  profile (isotropic anisotropic),
• Multi-step processes to achieve selective etching
  of SiO2 versus TiN and silicon,
• Anisotropic etching without corrosion to maintain
  electrical functionality for Cu technologies,
• Fast etch with no damages to display all layers
  in microsections,
• Stability of equipment and process for
  deprocessing of integrated circuits with many
  metal levels (9 levels).