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ENG6090 VLSI Design

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... provides an introduction to the fundamental principles of VLSI circuit design. ... Typical Fab 1 city block, a few hundred people. Packaging is largest cost ... – PowerPoint PPT presentation

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Title: ENG6090 VLSI Design


1
Lecture 1
ENG6090 VLSI Design
2
Professor Shawki Areibi (OffThorn 2335)
sareibi_at_uoguelph.ca Lecture Mon - Fri 1030 -
1200 pm Thorn2336 Laboratory ENG
2307 (Digital Design Lab) Course Web Page
www.uoguelph.ca/sareibi
3
COURSE INFORMATION
Syllabus - VLSI Design/Reconfigurable
Computing Grading 30 Assign
10 Presentation 40 Project 20
Exams Texts - Kang Leblebici. CMOS Digital
Integrated Circuits
- Rabaey. J. Digital Integrated Circuits,
2002 - Uyemura J. P. Physical Design of CMOS
Integrated Circuits Using L-Edit (optional
reference) Project - Cadence Tools -
Technology Files (0.18? process) Course
Expectations - Must Do a Project to Illustrate
your Understanding
4
ENG6090 COURSE OBJECTIVES
  • This course provides an introduction to the
    fundamental principles of VLSI circuit
    design.
  • Emphasis is placed on the design of basic
    building blocks of large scale digital integrated
    circuits and systems.
  • Understand the concept behind ASIC Design.
  • Implement a complete digital system on silicon
    using state of the art CAD tools.
  • Understand the consequence of scaling down the
    dimensions of transistors and its affect on
    device speed, density, .
  • Have the necessary background to complete CMOS
    designs and assess which particular design style
    to use on a given design from FPGA to Full custom
    design.

5
ENG6090 TOPICS TO BE COVERED
  • Overview of VLSI Design Cycle and Methodologies
  • nMOS, pMOS transistor theory and design equations
  • Overview of VLSI fabrication technology,
  • Basic CMOS digital circuits, transistor-level and
    mask-level design,
  • Complex logic gates, modular building blocks
  • Data path components, ASIC design guidelines,
  • Hardware Descriptive Languages
  • Reconfigurable Computing Systems (FPGAs)
  • Physical Design Automation

6
VLSIVery Large Scale Integration
  • Integration Integrated Circuits
  • multiple devices on one substrate
  • How large is Very Large?
  • SSI (small scale integration)
  • 7400 series, 10-100 transistors
  • MSI (medium scale)
  • 74000 series 100-1000
  • LSI 1,000-10,000 transistors
  • VLSI gt 10,000 transistors
  • ULSI/SLSI (some disagreement)

7
WHY VLSI?
  • Integration Improves the Design
  • Lower parasitics, higher clocking speed
  • Lower power
  • Physically small
  • Integration Reduces Manufacturing Costs
  • (almost) no manual assembly
  • About 1-5billion/fab
  • Typical Fab ?1 city block, a few hundred people
  • Packaging is largest cost
  • Testing is second largest cost
  • For low volume ICs, Design Cost may swamp all
    manufacturing cost

8
Levels of Design
  • Specifications
  • IO, Goals and Objectives, Function, Costs
  • Architectural Description
  • VLHD, Verilog, Behavioral, Large Blocks
  • Logic Design
  • Gates plus Registers
  • Circuit Design
  • Transistors sized for power and speed
  • Discrete Logic, Technology Mapping
  • Layout
  • Size, Interconnect, Parasitics

9
SYSTEM
MODULE
GATE
CIRCUIT
DEVICE
10
What is CMOS VLSI?
  • MOS Metal Oxide Semiconductor (This used to
    mean a Metal gate over Oxide insulation)
  • Now we use polycrystalline silicon which is
    deposited on the surface of the chip as a gate.
    We call this poly or just red stuff to
    distinguish it from the body of the chip, the
    substrate, which is a single crystal of silicon.
  • We do use metal (aluminum) for interconnection
    wires on the surface of the chip.

11
Poly crossed over Diffusion ? Field effect
transistor (FET) Insulated Gate ? Metal Oxide
Semiconductor FET Source and Drain are
Interchangeable
12
N-Channel Enhancement mode MOS FET
  • Four Terminal Device - substrate bias
  • The self aligned gate - key to CMOS

13
CMOSComplementary MOS
  • Means we are using both N-channel and P-channel
    type enhancement mode Field Effect Transistors
    (FETs).
  • Field Effect- NO current from the controlling
    electrode into the output
  • FET is a voltage controlled current device
  • BJT is a current controlled current device
  • N/P Channel - doping of the substrate for
    increased carriers (electrons or holes)

14
Complementary Metal Oxide Semiconductor
15
Four Views
Logic Transistor Layout Physical
16
VLSI Design
  • The real issue inVLSI is about designing systems
    on chips.
  • The designs are complex, and we need to use
    structured design techniques and sophisticated
    design tools to manage the complexity of the
    design.
  • We also accept the fact that any technology we
    learn the details of will be out of date soon.
  • We are trying to develop and use techniques that
    will transcend the technology, but still respect
    it.

17
Help from Computer Aided Design tools
  • Tools
  • Editors
  • Simulators
  • Libraries
  • Module Synthesis
  • Place/Route
  • Chip Assemblers
  • Silicon Compilers
  • Experts
  • Logic design
  • Electronic/circuit design
  • Device physics
  • Artwork
  • Applications - system design
  • Architectures

18
Design Styles
  • Full custom
  • Standard cell
  • Gate-array
  • Macro-cell
  • FPGA
  • Combinations

19
Full Custom
  • Hand drawn geometry
  • All layers customized
  • Digital and analog
  • Simulation at transistor level (analog)
  • High density
  • High performance
  • Long design time

20
Full Custom
Vdd
IN
Out
Gnd
21
Standard cells
  • Standard cells organized in rows (and, or,
    flip-flops,etc.)
  • Cells made as full custom by vendor (not user).
  • All layers customized
  • Digital with possibility of special analog cells.
  • Simulation at gate level (digital)
  • Medium density
  • Medium-high performance
  • Reasonable design time

22
Standard cells
Routing
Cell
IO cell
23
Gate-array
  • Predefined transistors connected via metal
  • Two types Channel based Channel less (sea of
    gates)
  • Only metallization layers customized
  • Fixed array sizes (normally 5-10 different)
  • Digital cells in library (and, or,
    flip-flops,etc.)
  • Simulation at gate level (digital)
  • Medium density
  • Medium performance
  • Reasonable design time

24
Gate-array
Sea of gates
Channel based
Vdd
NAND gate using gate isolation
Vdd
A
B
PMOS
Oxide isolation
B
A
Out
Out
NMOS
Gate isolation
Gnd
Can in principle be used by adjacent cell
Gnd
25
Gate-array
Sea of gates
RAM
26
Macro cell
  • Predefined macro blocks (Processors, RAM,etc)
  • Macro blocks made as full custom by vendor
  • All layers customized
  • Digital and some analog (ADC)
  • Simulation at behavioral or gate level (digital)
  • High density
  • High performance
  • Short design time
  • Use standard on-chip busses
  • System on a chip

DSP processor
LCD cont.
RAM
ROM
ADC
27
FPGA Field Programmable Gate Array
  • Programmable logic blocks
  • Programmable connections between logic blocks
  • No layers customized (standard devices)
  • Digital only
  • Low - medium performance (lt50 - 100MHz)
  • Low - medium density (up to 100k gates)
  • Programmable by SRAM, EEROM, Anti_fuse, etc
  • Cheap design tools on PCs
  • Low development cost
  • High device cost

28
FPGA
29
Comparison
30
High performance devices
  • Mixture of full custom, standard cells and
    macros
  • Full custom for special blocks Adder (data
    path), etc.
  • Macros for standard blocks RAM, ROM, etc.
  • Standard cells for non critical digital blocks

31
ASIC with mixture of full custom,RAM and standard
cells
Single port RAM
Dual port RAM
Full custom
Standard cell
FIFO
32
Pentium
33
ALPHA MOTOROLA POWER PC
Alpha
34
New combinations
  • FPGAs with RAM, PCI interface, Processor, ADC,
    etc.
  • Gate arrays with RAM, Processor, ADC, etc

Processor
FPGA or Gate-array logic
RAM
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