2005 ITRS Public Conference

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2005 ITRS Public Conference

Emerging Research Materials
San Francisco, CA
July 13, 2005

• Jim Hutchby SRC
• Mike Garner Intel

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ERM Participants
Dimitri Antoniadis MIT Marc Baldo                M
IT Karl Berggren           MIT Charles
Black IBM Dawn Bonnell Penn. Univ. Alex
Bratkovski HP George Bourianoff Intel John
Carruthers Port. St. Univ. Sang Wook Cheong
Rutgers Univ Supriyo Datta Purdue Univ. Alex
Demkov U. Texas Steve Erwin NRL M. Garner Intel,
Chair Bruno Ghyselen SOITECH Dan Herr SRC Susan
Holl Intel Jim Hutchby SRC Berry
Jonker NRL Gerhard Klemick Purdue Univ.
Ted Kamins HP Richard Keihl U. Wisc. Phil
Kuekes HP Louis Lome IDA Cons. Mark
Lundstrom Purdue Kathryn Moler Stanford U.
David Muller Cornell U. Ramamoorthy Ramesh UCB
Mark Reed Yale Univ. Rafael Reif MIT Dave Robert
Air Products Morley Stone DARPA Sadasivan
Shankar Intel Shinichi Tagaki U of Tokyo Tom
Theis IBM Jim Tour Rice Univ. Ruud
Tromp IBM John Henry Scott NIST
Eric Vogel NIST Victor Zhirnov SRC Igor
Zutic NRL Kang Wang UCLA Rainer Waser Aacken
U. Stan Williams HP In Kyeong Yoo Samsung
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Devices Material Interplay
Device Concept Determines Material Properties
Material properties optimized for device
Critical Properties Properties for Device
Operation Example CNT DOS, Eg meff f(chirality
diameter) Critical
Properties Material Properties
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Strategic Thrust

• 1D charge state materials
• Molecular state materials
• Spin state materials
• Strongly correlated electron state materials
• Directed self-assembly mechanisms
• Interface contact materials and processes
• Increased collaboration coordination between
  synthesis, metrology and modeling
• University, Govt, National Labs Industry

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Key Goals

• 1D charge state materials
• Control of properties, location orientation
• Molecular state materials
• Understand transport switching mechanisms
• Spin state materials
• Properties for room temperature operation, and
  spin gain
• Strongly correlated electron state materials
• Determine potential for novel device applications
• Directed self-assembly of nano-structured
  materials
• Establish sub nm location and orientation control
  
• Interface contact materials processes
• Improved metrology modeling for nm scale
  structure and material properties