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Corial 200
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Equipment Control Software

• COSMA Software with
• Edit menu for process recipe edition,
• Adjust menu for process optimizing,
• Maintenance menus for complete equipment control
  via internet with VPN (Virtual Private Network).

• CORS Software for
• Data reprocessing (Measures and data comparison).

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A Tool Organized in Successive Levels
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Diagram Modes
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A Communicant Tool
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System
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System
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Pumping System
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Reactor Features (1)

• New microwave (2.45 GHz) plasma source with hot
  walls to reduce polymer condensation and to
  enhance plasma cleaning. It
  produces High Density Plasma in a wide working
  pressure range (10 to 100 mT) for fast etching of
  up to Ø200 mm wafers,
• Helium assisted heat exchange between cathode,
  shuttle and wafer or packaged die with mechanical
  clamping to maintain sample temperature below
  100C,
• Numerous plasma modes accessible in the same
  process
• Microwave High Density Plasma RF biasing
• Reactive Ion Etching
• Microwave High Density Plasma for silicon
  thinning.

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Reactor Features (2)

• Reactor with hot walls enables
• Highly selective processes,
• Low contamination of the process chamber.
• Very low plasma potential (lt 2 Volts) and
  automatic self bias regulation giving rise to
  precise control of low ion energy levels (lt 15
  eV),
• Enable low damage etching,
• Minimal sputtering of metal lines,
• Isotropic and anisotropic etching.

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High Density Plasma Source
Device
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HDP Reactor Design
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HDP Reactor Design
Reactor walls are thermally isolated. They are
getting hot during etching. This enables
selective etching of SiO2 against SiN, TiN and
polysilicon.
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Loading
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Loading
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Clamping
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Cooling
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Etching
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End of Etching
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Unloading
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Unloading
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Some Process Specifications
Specifications HDP RF biasing
Process
Underlayer
Etch Rate (µm/min)
Selectivity
Polyimide Si3N4 SiO2 SiO2 / TiN () (High
selectivity)
Si3N4 SiO2 SiO2 TiN
gt50 3 1 gt20
3 0.5 0.2 0.05
() High selectivity requires temperature control
of the sample to etch.
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Helium Backside Cooling

• Control of sample temperature by He cooling
• Prevents metal lines lift-off,
• Maintains electrical functionality.

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Example of Shuttle
The shuttles are designed according to wafer
size, the shape of packaged dies for optimum
process results. The use of dedicated shuttles
according to sample to etch facilitates the use
of the system.
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Shuttle for Packaged Dies
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Preventing Overetch

• The latest submicron technology needs precise
  delayering
• Automatic endpoint detection,
• CCD camera with magnification gt 120 X,
• Laser beam diameter 20 ?m.

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Laser Endpoint Detection
Interferences lead to a periodic signal having a
l/2n period versus time
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Laser Endpoint Detection
Al reflects the laser, there is no interference
effect.