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Corial 200RL
A Reactive Ion Etcher
For SAW Devices
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Corial 200RL
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Equipment Control Software

• COSMA Software with
• Edit menu for process recipe edition,
• Adjust menu for process optimizing,
• Maintenance menus for complete equipment control
  via internet with VPN (Virtual Private Network).

• CORS Software for
• Data reprocessing (Measures and data comparison).

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A Tool Organized in Successive Levels
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Diagram Modes
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A Communicant Tool
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(No Transcript)
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Pumping System
Reactor
Load-lock
Load-Lock Valve
TV
TMP
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Reactor Features

• Reactive Ion Etching source designed to operate
  with a wide working pressure range (10 to 200
  mT),
• The large cathode size enables batch etching of
  up to three 3 wafers or up to one Ø150 mm wafer,
• Shuttles for loading and to enable etching of
  different sizes and numbers of wafers,
• Helium assisted heat exchange between cathode,
  shuttle with mechanical clamping to maintain
  shuttle temperature below 50C during etching.

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Loading
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Loading
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Clamping
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Cooling
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Etching
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End of Etching
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Unloading
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Unloading
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ALUMINUM ETCHING

• Aluminum etching requirements
• High etch rates and anisotropic profiles,
• Aluminium etch rate 250 nm/min,
• After the aluminium etching phase, a passivation
  step avoids corrosion due to AlCl3 trapped on the
  side walls during aluminium etching,
• No damage after a week long moisture exposure
  test at atmospheric pressure.

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Process Specifications For Aluminum Etching
Guaranteed Process Results
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Precise Monitoring
End of etching can be monitored using a CCD
camera with magnification gt 120 X and a laser
beam diameter 20 ?m. The laser spot is located
with a precise XY stage on the area to etch. When
the substrate is exposed the system detects
automatically the change in reflectivity.
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Laser Endpoint Detection
Photodiode
When laser beam reaches the substrate, the signal
level drops. This change enables automatic
endpoint detection.
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TRIMMING

• Trimming Specifications
• Uniformity of etching on 4 wafers 0,5.
• Uniformity of shift in frequency on packaged
  devices 5 KHz for a 120 KHz. Shift.

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Recap of Corial 200RL Features

• Reactive Ion Etching source which produces a
  uniform plasma in a wide range of working
  pressure (10 to 200 mT) for fast etching of Al
  and Al/2Cu on up to ?150 mm wafers,
• Helium assisted heat exchange to control shuttle
  temperature,
• Al Plasma passivation step provided with the
  process,
• Pumping system with gate valve for quick reactor
  maintenance,
• Laser endpoint with high magnification and small
  laser spot (25 µm) for precise process
  monitoring,
• Possibility of SAW devices trimming using a
  dedicated shuttle.