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ECE 802-604: Nanoelectronics

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ECE 802-604: Nanoelectronics Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv_at_msu.edu Lecture 15, 17 Oct 13 Outline of the ... – PowerPoint PPT presentation

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Title: ECE 802-604: Nanoelectronics


1
ECE 802-604Nanoelectronics
  • Prof. Virginia Ayres
  • Electrical Computer Engineering
  • Michigan State University
  • ayresv_at_msu.edu

2
Lecture 15, 17 Oct 13
In Chapters 02 and 03 in Datta How to correctly
measure I GV Add scattering to
Landauer-Buttiker Buttiker approach for dealing
with incoherent scatterers 2.6 occupied states
as scatterers 3.1 scattering/S matrix
3
1 Deg, M 1
mR
mL
X
X
O
probe
m
m
4
Outline of the solution
Goal V IR, solve for R What is V mA
mB What is I I I1 I2
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Lec 14
where
Ielectron
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Lec 14 Further benefit from I3 I4 0 with
Unitarity and symmetry, found m
8
Lec 14 Used 3 conditions
1/ I3 I4 0
2/
3/
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Datta Sec. 2.6
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1 Deg, M 1
mR
mL
X
X
O
probe
m
mA
mB
m
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NT(E)
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Where from
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Where from
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Where from
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above mB
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Datta Sec. 3.1
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What is a scattering S matrix?
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Introduce an S-matrix to describe both probe and
occupied state scattering while maintaining
Landuaer-Buttiker approach of treating all
terminals alike
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Datta, Sec. 3.1
Two propagating modes into one propagating
mode expect scattering due to occupied states
Game plan for each Si j element determine
is it a reflection or a transmission?
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Start with a more familiar example from a paper
by Engquist
The single in/out channel for the incoherent
scatterer gives an experimentally wrong
resistance. The Buttiker two-channel probe
description turned out to be correct.
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Example find the S-matrix for the diagram shown.
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Example find the S-matrix for the diagram shown.
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Example find the S-matrix for the diagram shown.
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Example find the scattering matrix S for the
Engquist diagram
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Example find the scattering matrix S for the
Engquist diagram
aout
bin
gin
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Datta Sec. 3.1
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Example find the S-matrix for the diagram shown.
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