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Universal Microsystems

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Universal Microsystems Gas Flow Restrictors for the Semiconductor Industry Company founded in 1999 Partnership with TEM Filter 3350 Scott Blvd. Santa Clara, CA – PowerPoint PPT presentation

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Title: Universal Microsystems


1
Universal Microsystems
  • Gas Flow Restrictors for the Semiconductor
    Industry
  • Company founded in 1999
  • Partnership with TEM Filter
  • 3350 Scott Blvd. Santa Clara, CA

2
Uses for Gas Flow Restrictors
  • Replace MFC in fixed process applications
  • steady pressure, single flow set point
  • Safety limit flow in case of line failure
  • Tamperproof needle valve replacement
  • Flow splitting
  • eliminates multiple MFCs
  • Back fill a chamber in a fixed time

3
UMS Gas Flow Restrictors
  • Orifice inside 316L SS container
  • High accuracy calibration ( 1.0)
  • Three orifice materials available
  • SS, Single crystal sapphire or silicon
  • Quick turn production

4
Orifice Flow vs Pressure
5
Orifice Characteristics
  • Completely stable
  • No Particle Generation
  • Minimal dry down time
  • Precision of flow at specified pressure
  • /- 5 standard, /- 2 available
  • Orifice will not clog like a filter

6
Restrictor body types available
  • 1/4 Male/Male VCR
  • 1/8 Male/Male VCR
  • 1/4 Female/Male VCR
  • 1/4 BulkHead VCR
  • Ni media Filter/Restrictor Combination
  • 1 1/8 surface mount sandwich

7
B-Series M/M VCR Flow Restrictor
.625
22-161414-00
.75
1.55
  • VCR Male Union
  • Flow Direction Arrow
  • External Part No. Label

8
F/M or M/F Versions
  • Gland to gland 1.80
  • Diameter 0.75
  • Wrench Flats 5/8

9
Filter/Restrictor Combination
Precise flow at a specified pressure
  • Specifications
  • No more than 1 particle/ft3
  • Less than 10 ppb THC
  • Less than 10 ppb moisture
  • 99.9999999 removal rating
    at rated flow
  • He leak check to 10-9 atm
    sccm/sec

10
Surface Mount Sandwich Restrictor
  • Restrictor can be inserted into either port
  • 3 Port version available

2-port IGS configuration1 1/8 body size
11
UMS Flow Restrictor Specifications
  • Surface finish, 7-8 Ra electropolish
  • Base Material, 316L SS,
  • Orifice material, Si, Sapphire, or SS
  • Seal for Si (Viton or Kalrez)
  • He leak check 10-9 atm-cc/sec
  • Maximum pressure, 200 psia
  • Temperature range, 50 to 250 oF

12
Sapphire Orifices
Orifice diameters from 0.003 to 0.040 Variation
in diameter is /- 2.5µm Different
manufacturing runs likely to see different
means but tight distribution
Nozzle side
Cross-Section
-2.5 µm
2.5 µm
13
Silicon Orifices
  • Used for diameters lt 0.003
  • or non-integer .001 units
  • Flow from nozzle side 10-15 greater
  • Avoid placing downstream from F plasma
  • Option sputter deposit Al203 (both sides)
  • Opportunity to enlarge undersized orifices
  • Oxidation and strip - 50 - 1000 nm

14
Stainless Steel Orifices
  • Mechanical drill OK down to 0.030 Use EDM down
    to 0.004
  • EDM precision is /- 1.5 at .008
  • EDM most expensive of three types

15
Standard Orifices N2 flow _at_ 20 psig
  • Flow range -15 sccm to 40 slm
  • Flow steps in 10
  • Sapphire orifices designated with N or R, SS
    orifices with F and Si orifices with S
  • N orifices nozzle side inletR orifices nozzle
    side outlet

16
How to find required orifice
  • This procedure converts the application gas flow
    at the application pressure into the equivalent
    N2 flow at 20 psig
  • Match the converted flow to the flow table
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