ERD TWG Emerging Research Devices Telecon Meeting No. 3

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ERD TWG Emerging Research Devices Telecon
Meeting No. 3

• Jim Hutchby - Facilitating
• Thursday, January 15, 2009
• 900 am 1030 Eastern US Time

ERD WG Telecon January 15, 2009 Pacific US
Central US Eastern US Europe
Taiwan Japan/Korea 6am
8am 9am 3pm
10pm 11pm
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Jan. 15, 2009 ERD Telecon Meeting Objectives

• Review structure and content of 2007 ERD Logic
  Section tables
• Review and discuss Japan ERD proposal for a new
  structure for the 2009 ERD Logic Section tables.

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January 15, 2009 ERD Telecon Meeting Agenda

• 900 am Check in review meeting
  Hutchby Objectives/Agenda
• 910 Review 2007 ITRS/ERD Logic Table
  Bourianoff structure
• 930 Present the Japan ERD Proposal for
  Hiramoto-san
• the 2009 ERD Logic Table structure
• 950 Discuss 2009 ERD Logic Table
  Bourianoff structure
  Hiramoto-san
• 1030 Adjourn Meeting

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Table ERD7a Emerging Research Logic
DevicesDemonstrated and Projected Parameters
Device Device
Device Device FET Extension FET Extension
Device Device FET A 1D structures Channel replacement SET Molecular Ferromagnetic logic Spin transistor
Typical example devices Typical example devices Si CMOS CNT FET NW FET NW hetero-structures Nanoribbon transistors with graphene III-V compound semiconductor and Ge channel replacement SET Crossbar latch Molecular transistor Molecular QCA Moving domain wall M QCA Spin Gain transistor Spin FET Spin Torque Transistor
Cell Size (spatial pitch) B Projected 100 nm 100 nm D 300 nm I 40 nm O 10 nm U 140 nm Y 100 nm C
Cell Size (spatial pitch) B Demonstrated 590 nm 1.5 mm E 1700 nm J 200 nm K, L 2 mm V 250 nm Z, AA 100 mm AB
Density (device/cm2) Projected 1E10 4.5E9 6.1E9 6E10 1E12 5E9 4.5E9
Density (device/cm2) Demonstrated 2.8E8 4E7 3.5E7 2E9 2E7 1.6E9 1E4
Switch Speed Projected 12 THz 6.3 THz F gt1 THz 10 THz Q 1 THz W 1 GHz Y 40 GHz AC
Switch Speed Demonstrated 1.5 THz 200 MHz G gt300 GHz 2 THz R 100 Hz V 30 Hz Z, AA Not known
Circuit Speed Projected 61 GHz 61 GHz C 61 GHz C 1 GHz O 1 GHz U 10 MHz Y Not known
Circuit Speed Demonstrated 5.6 GHz 220 Hz H Data not available 1 MHz P 100 Hz V 30 Hz Z Not known
Switching Energy, J Projected 3E-18 3E-18 3.00E-18 11018 O gt1.51017 S 5E-17 X 1E-17 Z 3E-18
Switching Energy, J Demonstrated 1E-16 1E-11 H 1E-16 J 81017 T gt1.31014 S 3E-7 V 6E-18 AA Not known
Binary Throughput, GBit/ns/cm2 Projected 238 238 61 10 1000 5E-2 Not known
Binary Throughput, GBit/ns/cm2 Demonstrated 1.6 1E-8 Data not available 2E-4 2E-9 5E-8 Not known
Operational Temperature Operational Temperature RT RT RT RT M, N RT RT RT
Materials System Materials System Si CNT, Si, Ge, III-V, In2O3, ZnO, TiO2, SiC, InGaAs, InAs, InSb III-V, Si, Ge, Organic molecules Ferromagnetic alloys Si, III-V, complex metals oxides
Research Activity AD Research Activity AD Research Activity AD 379 62 91 244 32 122
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Table ERD7b Alternative Information Processing
Devices
Resonant Tunneling Diodes Multi-ferroic Tunnel Junctions Single Electron Transistors Molecular Devices Ferro-Magnetic Devices Frequency Coherent Spin Devices
State Variable Charge Dielectric and magnetic domain polarization Charge Molecular conformation Ferromagnetic polarization Precession frequency
Response Function Negative differential resistance Four resistive states Staircase I/V from Coulomb blockade Hysteretic Nonlinear Nonlinear
ClassExample Multi-ferroic tunnel junction Voltage tunable transfer function CMOL, cross bar latch Amplifiers, buses, switches Spin torque oscillator
Architecture Heterogeneous Morphic Heterogeneous,morphic MQCA, morphic Morphic
Application Elements in hybrid magneto electric circuits Analog pattern matching Associative processing , NP complete, Elements in hybrid magneto-electric circuits Microwave power, tunable rectifiers
Comments Additionalfunctionality Density, functionality Density, cost functionality Radiation hard, environmental rugged RF functionality
Status Demo Demo Demo Demo Simulation
Material Issues Stray charge RT DMS
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Logic Table
T. Hiramoto, Dec. 14, 2009.
2007 Version 2 1 Table
2009 Version (Proposed) 3 1 Table
(1) Emerging Logic (General Purpose)
(1) CMOS Extension
(2) Alternative Info. Processing Devices
(2) Beyond CMOS (CMOS Supplement)
(3) Pure Beyond CMOS (CMOS replacement)
Transition Table
Transition Table
Classified by Operation Principles
Classified by Principles and Materials
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CMOS Extension
CMOS Supplement
CMOS Replacement
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(1) CMOS Extension Table
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(2) Beyond CMOS (CMOS Supplement)
- Spin MOSFET (Including STT) - SET (including
Molecular SET) - CMOL
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(3) Beyond CMOS (CMOS Replacement)
- Spin Wave - Domain Wall - NEMS -
Electrochemical (Atom Switch, Memoristor?) -
Molecular Computing Devices - Spin Transistor
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Operation Principles and Materials