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Chapter 4 Components for Electronic Systems

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Title: Chapter 4 Components for Electronic Systems


1
Chapter 4 Components for Electronic Systems
  • Description of geometrical, thermal and some
    electrical properties of main types of
    components. No description of electrical
    properties of monolithic circuits.

The course material was developed in INSIGTH II,
a project sponsored by the Leonardo da Vinci
program of the European Union
2
Hole Mounted Resistors
  • Mature design, fig. 4.1
  • Carbon composite (a)
  • Metal film (b)
  • Wire wound (c)

3
Surface Mounted Resistors
  • Fig.4.2.a Thick film layers on ceramic
    substrate, rectangular shape

4
Surface Mounted Resistors
  • Fig. 4.2 b) Metal system for termination on SMD
    resistors.

5
Surface Mounted Resistors
  • Fig. 4.2 c) MELF-resistors have cylindrical
    body.(MELF is acronym for Metal Electrode Face
    Bonding)

6
Surface Mounted Resistors
  • Table 4.1 Properties of SMD resistors

7
Surface Mounted Resistors
  • Table 4.2 The resistance series E24, 12 and 6

8
Hole Mounted Resistors
  • Coding

Color Value Multiplier Tolerance()
Black 0 0 -
Brown 1 1 1
Red 2 2 2
Orange 3 3 0.05
Yellow 4 4 -
Green 5 5 0.5
Blue 6 6 0.25
Violet 7 7 0.1
Gray 8 8 -
White 9 9 -
Gold - -1 5
Silver - -2 10
None - - 20
9
Capacitors
  • In addition the capacitance, the following
    properties are important
  • Maximum voltage rating
  • Temperature dependence of the capacitance
    (temperature coefficient)
  • Loss tangent (tan d), see below
  • Equivalent series resistance
  • Long term stability and ageing phenomena
  • High frequency properties
  • Leakage current
  • Ability to withstand various production processes
    (high temperature, etc.)
  • Price, physical size, etc.
  • Web www.interq.or.jp/japan/se-inoue/e_capa.htm

10
Capacitors, continued
  • Main types
  • Ceramic multilayer
  • Electrolytic dry, polarized
  • Electrolytic, wet, polarized
  • Metallized plastic film
  • Mica

11
Capacitors, continued
  • Electrical modelC (eo er A) /d Z
    Rs2 (wL - 1/wC)21/2Rs series
    resistance (Rp neglected),L inductance, fig.
    4.5 Resonance frequency will be whenwL
    1/wC Loss tangenttan d R / Im Z
    Rp Rs 1 (wCRp)2 / wCRp2 - w L (1
    (wCRp)2

C
A electrode area
d electrode distance
12
Capacitors, continued
  • Fig. 4.3 Electrical equivalent model for
    capacitor. If Rp can be neglected the impedance
    is given by Z Rs2 (wL - 1/wC)21/2
  • Fig. 4.4 The frequency dependence of impedance
    for multilayer ceramic capacitors (below) and
    tantalum electrolytic capacitors (top), all
    having 100 nF capacitance value.

13
Capacitors, continued
  • Fig. 4.5 Frequency dependence of the loss
    tangent tan d schematically.tan d R / Im Z
    Rp Rs ( 1 ( wCRp)2) / ( wCRp2 - w L (1 (
    wCRp)2)

14
Capacitors, continued
  • Multilayer Ceramic Capacitors

Fig. 4.7.a SMD Multilayer Ceramic Capacitor
Fig. 4.7.b Metal system for the end termination
of multilayer ceramic capacitors.
15
Multilayer Ceramic Capacitor, continued
  • Class 1 Low capacitance, good electrical
    properties, types NP0, N220, N750, COG, etc.
  • Class 2 High capacitance, poorer electrical
    behaviour, types X7R, Z5U

Fig. 4.8 Relative dielectric constant for
ferroelectric ceramic compositions (class 2), as
a function of temperature, near the Curie point
16
Multilayer Ceramic Capacitors, continued
  • Fig. 4.9 Properties of dielectrics of the types
    NP0, X7R and Z5U in SMD ceramic multilayer
    capacitors. Top The voltage dependence of
    capacitance.
  • Middle Loss tangent as function of
    temperature.Bottom The temperature coefficient
    of the capacitance (Philips).

17
Multilayer Ceramic Capacitors, continued
  • Fig. 4.10 Crack formation because of thermal
    stress in ceramic capacitors

18
Capacitors, continued
  • Tantalum, Dry Electrolytic
  • Very high capacitance, low voltages, low leakage
    current

Fig. 4.11 a) Tantalum SMD electrolytic capacitor
(Philips), and hole mounted tantalum capacitors
(Siemens) Tantalum oxide is Ta2O5.
19
Capacitors, continued
  • Electrolytic Capacitors why they are polarised
  • The capacitance is the oxidised surface of the
    anode
  • Reversed polarity will remove the oxide by
    reduction reaction at the anode and loss of
    dielectric isolation leading to short-circuiting

Fig. 4.11 a) Tantalum SMD electrolytic capacitor
(Philips), and hole mounted tantalum capacitors
(Siemens)
20
Capacitors, continued
  • Tantalum, Dry Electrolytic

Fig. 4.11 b) Electrical properties of dry
tantalum electrolytic capacitors. (Data from
Philips)
21
Wet Electrolytic Aluminium Capacitors
  • Fig. 4.12 a) Aluminium electrolytic capacitor
    for SMD mounting. (From Philips)

22
Wet Electrolytic Aluminium Capacitors
  • Fig. 4.12 b) Aluminium electrolytic capacitor
    properties (Philips).
  • Top Temperature dependence of the capacitance,
    relative to the value at 20 C.
  • Middle Temperature dependence of tan d.
  • Bottom Temperature dependence of impedance at a
    frequency of 10 kHz.

23
Diodes and Transistors
  • Fig. 4.13 Axial, plastic encapsulated, hole
    mounted diodes to the left.
  • Centre A plastic can with metal base for power
    diodes. It can be hole mounted or surface
    mounted, depending on how the leads are bent. The
    base is screwed to the substrate.
  • Right A higher power diode in a metal can. Screw
    mounted to the substrate for efficient thermal
    contact.

24
Diodes and Transistors, continued
  • Fig. 4.14 Various types of hole mounted
    transistor packages
  • a) Left Plastic packages, b) Centre Low power
    metal packages
  • c) Right Metal package for high power
    transistors. For the high power package, the
    collector is connected to the metal body.

25
Diodes and Transistors , continued
  • Fig. 4.15 MELF-package for SMD diodes. The
    standard size is designated SOD-80, with
    dimensions shown to the right. (MELF Metal
    Electrode Face Bonding)

26
Diodes and Transistors, continued
  • Fig. 4.16 SOT-packages for SMD diodes and
    transistors The most common, SOT-23 top left,
    SOT-89 for power transistors in the middle, and
    SOT-143 with four terminals to the right. The
    dimensions for SOT-23 are shown bottom left, and
    a cut-through SOT-89 in the middle. Ceramic SMD
    transistor packages with terminal placement like
    for SOT-23 are shown bottom right.

27
IC Packages
  • Plastic or Ceramic IC Packages?
  • Plastic
  • Not hermetic
  • Low price in large quantities
  • High initial cost
  • Low thermal conductivity
  • Limited time at high temperature
  • Thermal mismatch to Si chip and metals
  • Not suitable for for high frequency circuits
  • Ceramic
  • Hermetic, good reliability
  • Costly, but OK for prototyping
  • Good thermal conductivity
  • Low thermal coefficient of expansion, matches
    well with Si, mismatch to organic substrates
  • Gold metallization must be removed
  • Well defined high frequency properties

28
Packages for Hole Mounted ICs
  • Fig. 4.17a) DIP (Dual-in-line) IC package. b)
    Partly cross-sectioned DIP package which shows
    the silicon chip, bonding wires, lead frame and
    plastic body. c) The terminal organisation for 4
    two-input NOR gates in a 14 pins package.

29
Packages for Hole Mounted ICs, continued
  • Fig. 4.18 Pin grid packages To the left a
    cavity up ceramic package, and to the right a
    plastic moulded package.

30
SMD IC Packages
  • Small Outline (SO)
  • Plastic Leaded Chip Carrier (PLCC)
  • Leadless Chip Carrier (LLCC)
  • Leaded Ceramic Chip Carrier (LDCC)
  • Flatpack, mini-flatpack
  • TapePak
  • Chip Scale Packages

31
SMD IC Packages, continued
  • Fig. 4.19 Surface mounted SO (Small Outline) IC
    package. (From Philips)

32
SMD IC Packages, continued
  • Table 4.3 Dimensions for SO- and VSO packages.
    Centre-to-centre lead distance is normally 50
    mils, except for VSO-40 with 30 mils and VSO-56
    with 0.75 mm.

33
SMD IC PackagesPlastic Leaded Chip Carrier
(PLCC)
  • Fig. 4.20 Plastic leaded chip carrier with
    (PLCC). They are normally square with an equal
    number of terminals on all four sides (top). For
    large DRAMs, the package has terminals on only
    two sides, also being called SOJ. The bottom
    figure shows a 1 or 4 Mbit DRAM package.

34
SMD IC PackagesPlastic Leaded Chip Carrier
(PLCC)
  • Table 4.4 Dimensions for PLCC packages. Format
    means the number of terminals on two neighbouring
    sides.

35
Leadless Chip Carrier (LLCC)Leaded Ceramic Chip
Carrier (LDCC)
  • Fig. 4.21 a) The various types of ceramic chip
    carriers 4.15. Types A -D to the left are
    leadless (LLCC), whereas types A and B to the
    right are meant for mounting leads (LDCC).

36
Leadless Chip Carrier (LLCC)
  • Fig. 4.21 b) LLCC packages, additional details.
    The longest terminal is to designate electrical
    terminal number 1 in the circuit.

37
Leadless Chip Carrier (LLCC), continued
  • Table 4.5. LLCCs, dimensions.

38
Leaded Ceramic Chip Carrier (LDCC)
  • Fig. 4.22 Leaded ceramic chip carriers.

39
Leaded Ceramic Chip Carrier (LDCC), continued
  • Fig. 4.23 Various shapes of the leads, and
    leadless termination for comparison.

40
Flatpacks
  • Fig. 4.24 Quad flatpack with leads on all four
    sides. Flatpacks are usually made of plastic or
    ceramic. They have leads on four or two sides.

41
Mini-flatpacks
  • Fig. 4.25 Mini-flatpacks is a name for higher
    density flatpacks Typically 84 - 244 terminals
    and a pitch of 25 mils.

42
TapePak
  • Fig. 4.26 National Semiconductors TapePak
    component packages are specified with terminal
    numbers between 40 and close to 600. To the left
    we see a 40 leads TapePak in the form it is
    received by the user with a protective ring
    around it, and test points outside the ring. To
    the right is TapePak 40 after excising and lead
    bending, seen from above and from the side.

43
High Performance Packages
  • Multilayer ceramic, Al2O3 or AlN
  • Ground planes
  • Controlled characteristic impedance
  • Thermal vias

44
High Performance Packages
  • Fig. 4.27 Thermal via-holes in the printed
    circuit board, for better heat conduction.

45
High Performance Packages
  • Fig. 4.28 Multilayer package for high frequency
    GaAs circuits with 3 ground planes, 2 voltage
    planes, 1 signal layer and a top conductor layer
    for contacts and sealing (Triquint).

46
High Performance Packages, continued
  • Fig. 4.29 Multichip package for memory module in
    a Hitachi high-performance computer 4.18. The
    module contains 6 ECL chips, mounted by flip chip.

47
Packages Future Trends
  • Fig. 4.30 Comparison between the size of various
    package forms for an integrated circuit with
    approximately 64 terminals.

48
Packages Future Trends, continued
  • Fig. 4.31 History and prognosis for the use of
    various sizes of passive SMD components, in
    percentage of the total number.

49
Metallization of Terminals
  • Passives
  • Ag in alloy with Pd, Ni barrier, Sn/Pb
  • Ag in solder alloy
  • With adhesive mounting
  • No Sn/Pb on terminal
  • ICs
  • Au removed
  • Sn/Pb coating

50
Terminal Metallization, Solderability and
Reliability
  • Fig. 4.32 Strain at fracture of solder fillet as
    function of gold concentration in the solder
    metal, relative to value without gold.

51
Electrostatic Discharges (ESD)
  • Unprotected MOS Max 5 - 80 V on input before
    destroyed
  • Triboelectricity gtgt1000 V discharge
  • Billions of damage annually
  • Protected circuits tolerate 500 - 8000 V
  • Extensive precautions in industry, handling and
    packing

52
Electrostatic Discharges - Component Damages and
Precautions
  • Fig. 4.33 MOS transistor schematically. The gate
    oxide is very vulnerable for damage by
    electrostatic discharge. Gate oxides down below
    200 Ã… (20 nm) are now used.

53
Electrostatic Discharges - Component Damages and
Precautions, continued
  • Fig. 4.34 CMOS circuit exposed to electrostatic
    damage Silicon has molten in a small area.
    Picture size ? 5?m x 5?m.

54
Electrostatic Discharges - Component Damages and
Precautions, continued
  • Fig. 4.35 ESD protection circuit at in- and
    outputs for MOS and for bipolar circuits.

55
Component Packaging
  • Paper tape (hole mounted passives)
  • Blister tape (SMD passives, discretes, small ICs)
  • Sticks (DIPs, SMD ICs)
  • Waffle trays (Flatpacks)
  • Stack magazine
  • Bulk Not suited for automatic mounting

56
Component Packaging for Automatic Placement
  • Fig. 4.36 Blister tape for surface mounted
    components. Standard dimensions for 8 mm wide
    tape.

57
Component Packagingfor Automatic Placement
  • Fig. 4.37 Plastic sticks as packaging for SMD
    integrated circuits.

58
Component Packagingfor Automatic Placement
  • Fig. 4.38 Waffle trays packaging for flatpacks
    to the left, frame for stacking of single
    component to the right.

59
End of Chapter 4 Components for Electronic
Systems
  • Important issues
  • Components
  • Distinguish between the different components
  • Packages for electronic devices
  • Distinguish between the different packages
  • Electrostatic discharges
  • Component packaging
  • Used for automatic assembly machines
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