ION BEAM NEUTRALIZATION

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Ion-beam and plasma technologies and equipments
Presenting author Dr. Sergey M. Zavadskiy
Dr. Dmitriy A. Golosov Dr. Sergey M.
Zavadski e-mail svad_at_bsuir.by phone
375-17-2-93-80-79 fax/phone [phone]
Minsk 2013
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1. Thin film research laboratory
The Thin Film Research Laboratory is engaged in
research and development of equipment and
technologies for ion-plasma deposition of thin
films applied in optics, micro- and
optoelectronics, as well as of wear-resistant,
protective decorative thin films.
The Laboratory activities and fields of
research        Development of technological
ion sources, such as ion beam sputtering, double
ion-beam sputtering, ion-beam assisted deposition
(IBAD)        Design of magnetron sputtering
and unbalanced magnetron sputtering systems,
including those intended for low-pressure
magnetron sputtering         Processes of
reactive ion-beam and magnetron
sputtering        Processes of unbalanced
magnetron sputtering        Ion beam
neutralization        Development of ion-plasma
deposition processes for reflecting multilayer
structures characterized by high constancy of
parameters        Development of compositions
and processes for deposition of high-K and low-K
dielectrics        Development of compositions
and processes for deposition of magneto-resistive
thin films        Development of compositions
and processes for deposition of solid electrolyte
and cathode layers for solid oxide fuel cell
        Ion polishing of optical parts
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4. DOUBLE-BEAM ION SOURCE BASED ON HALL-CURRENT
ACCELERATOR DBIS-001
 Applications         Ion-beam
sputtering         Reactive ion-beam
sputtering         Double ion-beam
sputtering         Ion pre-cleaning of
surfaces         Ion-beam assisted
deposition         Ion mixing         Ion
etching. Specifications of an ion source with a
target of ? 80 mmSputtering stage        
Anode voltage 450 6000 V         Ion
energy 300 2000 eV         Discharge
current up to 300 mA         Ion beam
current up to 250 mA         Working
pressure 0.01 - 0.06 Pa         Gas
flow up to 50 sccm         Working gases
Ar, O2, N2, CH4, etc.         Deposition
rate up to 0.8 nm/sec Assisting
stage         Anode voltage 450 3000 V
(max. - 6000 V)         Ion energy 300 1000
eV (max. - 2000 eV)         Ion beam
current up to 120 mA         Working
pressure 0.01 - 0.06 Pa         Gas
flow up to 30 sccm         Working gases
Ar, O2, N2, CH4, etc.
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2. SPUTTERING ION SOURCE BASED ON HALL-CURRENT
ACCELERATOR SPIS-002
The sputtering ion source based on Hall-current
accelerator is designed for deposition of thin
films of dielectric, metals and
semiconductors. Applications        Ion-beam
sputtering        Reactive ion-beam
sputtering. Specifications of an ion source
with a target of ? 80 mm        Anodic
voltage 450 6000 V        Ion
energy 300 2000 eV        Discharge
current up to 300 mA        Ion beam
current up to 250 mA        Working
pressure 0.01 - 0.06 Pa        Gas flow up
to 50 sccm        Work gases Ar, O2, N2,
CH4, etc.        Deposition rate up to 0.8
nm/sec The ion source allows sputtering of
metallic, semiconductor and dielectric (SiO2, BN,
graphite, etc.) targets. It may be equipped with
a rotary target holder for four targets of
different material to form multilayer structures
within a single vacuum cycle (Fig. 2). It is
possible to obtain component films by applying
mixtures of rare and reactive gases (oxygen,
nitrogen, etc.) when sputtering metallic targets.
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3. ION SOURCE BASED ON HALL-CURRENT ACCELARATOR
FOR ION-ASSISTED DEPOSITION ASIS-002
Applications        Ion-beam assisted
deposition (IBAD) in combination with
electron-beam laser or arc evaporators and
ion-beam sputtering systems        Ion
mixing        Ion pre-cleaning       
Ion-beam etching with chemically active gases
used        Direct beam deposition
(DiBD)        Ion-beam assisted magnetron
sputtering (IBAM) Advantages        High
layer adhesion        Possible to control
internal stresses within the layer        Low
porosity of deposited layers       
Controllable stoichiometry when depositing
compositions. Specifications of the ion
source        Anode voltage 1200 - 6000 V
        Ion energy 400 - 2000 eV       
Ion beam current up to 200 mA        Working
pressure 0.01 - 0.06 Pa        Gas flow up
to 40 sccm        Working gases Ar, O2, N2,
hydrocarbons, chlorine- and fluorine
containing gases.
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5. RF/DC MAGNETRON SPUTTERING SYSTEM
MIRAGE-010.080
Specifications         magnetic system . . . .
. . . . . . . . . . . . . . . . . . . . . .
Nd-Fe-B permanent magnets        target . . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . ? 80 mm (thickness 1 6
mm)        substrate size . . . . . . . . . .
. . . . . . . . . . . . . . . . . . 60?60
mm        discharge voltage DC . . . . . . .
. . . . . . . . . . . . . . . .300 600
V        discharge current DC. . . . . . . .
. . . . . . . . . . . . . . . up to 3.0
A        RF power (13.56 ???) . . . . . . . .
. . . . . . . . . . . . . up to 1.0 kW       
working gases . . . . . . . . . rare or mixture
of rare and reactive gases (O2, N2,
CxHy)        gas flow . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 45
60 sccm        working pressure . . . . . . .
. . . . . . . . . . . . . . . . . . . . . 0.06 -
1.0 Pa        deposition rate (Al target) DC
1 kW . . . . . . . . . . . . . . . . . . . . . .
. . up to 20.0 nm/s RF (13.56 MHz, 1000 W) .
. . . . . . . . . . .up to 5.0 nm/s       
overall dimensions . . . . . . . . . . . . . . .
. . . . . . . . . ? 12780 mm        mass . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . no more than 5.0 kg.
 Application        DC magnetron
sputtering        Pulse MF magnetron
sputtering        RF magnetron sputtering
        DC/RF reactive magnetron sputtering
        Pulse magnetron sputtering.
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6. RF/DC MAGNETRON SPUTTERING SYSTEM RIF-001.036
ApplicationsDC/RF magnetron sputtering system
RIF-001.036 is designed for deposition precious
metals and metals of platinum group,
semiconductor and dielectric thin film by are
methods of DC, RF (13.56 MHz), pulse MF (10
200 kHz) magnetron sputtering and reactive
magnetron sputtering. Specifications        
magnetic system . . . . . . . . . . . . Nd-Fe-B
permanent magnets        target . . . . . . .
. . . . . . . . . . . . ? 36 mm (thickness 1 4
mm)        substrate size . . . . . . . . . .
. . . . . . . . . . . . . . .30?30 mm       
discharge voltage DC . . . . . . . . . . . . . .
. . . . 300 600 V        discharge current
DC. . . . . . . . . . . . . . . . . . .up to 1.0
?        RF power (13.56 MHz) . . . . . . . .
. . . . . . . . up to 200 W        working
gases . . . . . . . . . rare or mixture of rare
and reactive gases (O2, N2, CxHy)         gas
flow . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . .45 60 sccm        working
pressure . . . . . . . . . . . . . . . . . . . .
. . . . .0.06 - 1.0 Pa        deposition rate
(Al target) DC 200 W . . . . . . . . . . . . . .
. . . . . . . up to 20.0 nm/s         RF
(13.56 MHz, 200 W) . . . . . . . . . . up to 5.0
nm/s        overall dimensions . . . . . . . .
. . . . . . . . . . . . . .? 12780 mmmass . .
. . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . .no more than 2.0 kg.
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7. ION-BEAM AND ION-PLASMA THIN FILM TECHNOLOGIES
One of the laboratory's areas of expertise is
development and implementation of new
multi-tasking thin-film technology. The interests
include ion-beam and ion-plasma deposition
technologies for multi-layer structures for
optics and optoelectronics (films of SiO2, ZnO,
TiO2, Y2O3, Ta2O5, In2O3, AlN, Al2O3, ITO etc.)
on large-format substrates         ion-plasma
deposition technologies for reflecting structures
(laser mirrors with high laser radiation
tolerance, IR mirrors and heat shields with high
stability of parameters under high temperatures
and humidity)         multi-layer structure
deposition technologies based on refractory
compositions (TiB2, Si3N4, AlN, CrN, TiN,
etc)         development of processes for
super-hard coatings based on diamond-like
coatings (DLC), cubic Boron nitride (c-BN), and
Carbon nitride (?-C3N4) by methods of IBAD,
unbalanced magnetron sputtering and double-beam
ion sputtering development of compositions and
processes for high-K and low-K dielectrics.
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8. PROTECTIVE THERMOCONDUCTING COATING FOR
THERMOPRINTING HEAD

• REQUIREMENTS
• High thermal conductivity
• High wear-resistance

Themoprinting head with deposited by reactive
magnetron sputtering AlN coating
Thickness of AlN film gt 1.2 ?mWear-resistance
gt 25 km of paper
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9. PRODUCTION OF HEATER ON THE ALUMINUM SUBSTRATE
Developed the composition of multicomponent
resistive alloy and technology of ion-beam
deposition
Advantages        Low mass        High
power       Possibility to mounting on heating
object Specifications   Overall dimensions
60?48?1, 60?24?1, 30?48?1 mm
      Working voltage 12, 36,
220 V       Power density up to
8.5 W/cm2       Overheating temperature gt
60o C
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10. The technology and equipment for vacuum
decorative metallization of ABS plastic
Developed the technology and equipment for
vacuum decorative metallization of ABS plastic.
Its technology and equipment now used in foreign
company Alcopack
Magnetron sputtering system ?SPR.830.001 with
target 830100 mm
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11. The technology and equipment for depositing
IR mirror onto the inner surface of Epiquar
121/8.00.00 products
Ion-plasma system for deposition IR mirror onto
the inner surface of products
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12. REFLECTION SPECTRUMS OF IR MIRRORS
The Epiquar 121/8.00.00 product with deposited
Al/SiO2 IR mirror
a Al mirror after depositionb Al mirror in
two month later after deposition c structure
Al/SiO2 in two month later after deposition d
structure Al/SiO2 after thermal processing at 300
?? (30 min)
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13. The ion plasma technology of high
thermostability conducting coatings for CRT
displays electron gun
REQUIREMENTS        sheet resistance lt 300
Ohm/?        ???????? ?????? ??????????? ??????
???????? ???????? ?????? ? ??????? 6 ? ???
????????? ?????????????.         ???????????
??????????? ? ??????????????? ???????? ?????
??????????? ????????? ???????.        Change of
sheet resistance after influence of fire no more
than 10 Developed the ion plasma technology
of high thermostability conducting coatings for
CRT displays electron gun. Productivity up to
2400 parts in shift.Manufactured more than 1 000
000 parts.
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14. The technology of magnetron deposition for
Ni/Cr contact layers for thermo-resistors
Developed the technology for magnetron
deposition of Ni/Cr contact layers for
thermo-resistors. Its technology now used in
Vitebsk factory of radio component Monolit
Double layer films deposited on two side of
thermo-resistorProductivity up to 1800
substrate at one timeProcess time 50 min
Thermo-resistors with deposited Ni/Cr contact
layers