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8x8 SRAM

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The SRAM project helped us understand the IC design process (schematic and ... SRAM is a 6-transistor bistable latch that stores one of the two possible states ... – PowerPoint PPT presentation

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Title: 8x8 SRAM


1
8x8 SRAM
  • Wing ChanMahavir ShethJunghoon KangShalin Shah
  • Advisor Dave Parent
  • 12/6/04

2
Agenda
  • Abstract
  • Introduction
  • Simple Theory
  • Back Ground information
  • Summary of Results
  • Project Details
  • Results
  • Cost Analysis
  • Conclusions

3
Abstract
  • We designed an 8x8 SRAM that operates at 200Mhz
    and uses 15.2mW of power and occupies an area of

4
Introduction
  • The SRAM project helped us understand the IC
    design process (schematic and layout) keeping in
    mind the delay, power, and area specifications.
  • SRAM is a 6-transistor bistable latch that stores
    one of the two possible states as long as power
    supply is provided.
  • Equations used

5
6
3
4
1
2
5
Project Details
  • The SRAM Circuit is a 8 bit 64 cell in a standard
    8 column by 8 row design.
  • Each Row of the cell is selected by the 3 x 8
    decoder.
  • The Data is read in at the positive edge of the
    clock from the DFF and feed into the 8 input
    lines.
  • Each Row has two write circuits that writes to
    the bit lines and inverted bit lines that
    provides the voltages for the sense amplifier for
    reading when read enable is selected.

6
Calculated
Area 273µcm x 495µcm 0.135µ
Observed
Total delay 3.7ns
Power 6.08mA 2.5V 15.2mW
Or 0.11W/µ
7
Longest Path Calculations
Logic Gate Cg to CDNs CDPs LNs LPs WN WP WN WP WN WP Cg to
Level Gate Drive CDNs CDPs LNs LPs (H.C) (H.C) (S) (S) (L) (L) Gate
1 Decoder                        
2 Inv 20.3fF 1 1 1 1 5.55 3.3 6.3 4.35 7.05 4.95 18.3fF
3 Nand3 16fF 5 3 3 1 4.95 4.8 5.3 5.5 6 6 20.3fF
4 InvBuffer 80fF 1 1 1 1 4.55 2.55 5 3.35 5.4 4.05 16fF
5 DFF 30fF             2.62 4.54 2.62 4.54 8.2fF
                  2.69 2.33 2.69 2.33  

8
Schematic
9
Schematic
10
Schematic
11
Layout
12
Verification
13
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14
Simulations
15
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16
Cost Analysis
  • Spend over 50 hrs verifying circuit logic and
    timing.
  • Over 100 hrs doing layout and post extract
    simulation.

17
Lessons Learned
  • Post extract simulation does not always matches
    the schematic circuit even when LVS
    matches-specially if there are analog circuit
    components.

18
Summary
  • The SRAM project covers many areas thats
    important to learning IC design-from timing
    verification to layout.
  • RESULT
  • - schematic simulation showed correct logic
    for the SRAM
  • - meets timing specification of 5ns
  • - meets power specification of 23mW(15.2mW)
  • - LVS matches the layout with schematic
    successfully

19
Post extracted simulation does not charge and
discharge to correct logic. POSSIBLE
REASONS - larger than expected capacitance on
the bit lines to charge up - needs pre-charge
bit lines before each read cycle.
20
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21
Acknowledgements
  • Thanks to Synopsys for Software donation
  • Professor Parent
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