A1257787574PfMnV

1

Neutron Transmutation Doping of Silicon Basis of
Technology NTD Facility
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008

• Reactor facility for Neutron Transmutation
  Doping of silicon cylindrical ingots 5 and 6
  inches / max length 500 mm
• Neutron flux uniformity is reached by means of
  mechanical drive and irradiation channel special
  construction (titanium shield)
• Effect of the radial flux gradient is
  eliminated by the container rotation and axial
  neutron flux flattering is realized by two cycles
  irradiation (up and down position / flipping)

2

Neutron Transmutation Doping of Silicon Basis of
Technology NTD Facility
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008
rotation
flipping
Single silicon crystals ingots
Phase I
Phase II
Silicon ingots Ø 5inch / 6inch Lmax 500
mm Neutron flux flattering rotation plus flux
profile linearization
Reactor MARIA pool View on the in-core part
of Neutron Transmutation Doping of Silicon
Facility
3

General View of the NTD SILICON FACILITY
Installed Outside Reactor Pool for Tests
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008
1 - car of container transportation device 3
- turn-around table 8 - irradiation channels
with rotation drive (3-channels A, B, C)
4

General View of the NTD SILICON FACILITY
Installed Outside Reactor Pool for Tests
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008
5

Neutron Transmutation of Silicon Project
Innovativeness
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008
An innovating solution enabling for doping a
large silicon (diameter up to 8 inch) and
realized doping general outline the requirements
for doping uniformity The project encompasses
specific construction condition and possible
achieving of parameters of neutron field in
research reactor MARIA to provide an effective
process of NTD of silicon when meeting acceptable
quality parameters difference between achieved
and required value for axial and radial
uniformity lt3 and for target resistivity lt5
NTD Facility offers annual production
efficiency 6200 kg for crystal ingots Ø 5 inch
to 9500 kg for crystal ingots Ø 6 Test
irradiation was made for different target
resistivity from 20 to 65 Ohm cm
6

Neutron Transmutation Doping of Silicon Current
Status
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008

• Based on experimental facility was designed and
  finished construction of three channels
  irradiation production facility enabling for
  continuous sample handling during of-pile reactor
  operation
• The facility passed full program of out-reactor
  tests including neutron measurements system as
  well as control and automatics systems (please to
  find attached photo and sketch).
• The time for start of the reactor facility in
  full production scale depends on final or
  preliminary agreement with the Japanese
  customers
• Actually annual production efficiency from one
  channel of experimental facility is  from ca
  2000 kg/y (5 inches / 65 Ohm cm) to ca 2900 kg/y
  (6 inches).

7

Scientific, economical and social effects of
practical applications NTD technology
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008

• Successive stage for developing at the IAE the
  highly advanced technologies is of significant
  important on the way to utilizing the only one
  research reactor in Poland for production goals
• There have appeared a real perspective to join
  the scientific-research centers tendering the
  innovating services at the range of advanced
  technologies simultaneously enhance the work
  attractiveness for the young specialists
• Development of research work in the domain of
  the reactor physics and technology, problem with
  neutron and thermal measurements
• Creating due to forecast income financial
  sources for purchase nuclear fuel for successive
  reactor operation period a basic facility for
  production of radioactive isotopes in Poland
• Program as a practical and safety utilization of
  nuclear reaction became support for state
  authorities in the area of the strategic nuclear
  power planning in the near future

8

Neutron Transmutation Doping of Silicon Base
Application
SLOVAK-POLISH BILATERAL MEETING Zilina/Trencin,
27-28 Oct.,2008

• Increasing interest in semiconductors obtained
  by using NTD technology due to their good
  properties and in their application for
  production of high power thyrystores and diodes,
  integrated circuits especially for automotive
  industry, railways and electric energy
  distribution systems
• Global market of neutron transmitted silicon is
  around 120 ton per year and is observed gradual
  growth
• The implemented procedure of neutron
  transmutation doping aimed at gaining the n
  type semiconductors realized at the MARIA reactor
  apart from microelectronics could be used for
  additional application e.g.. on neutron
  transmutation doping of silicon policrystals
  material used to construct photovoltaic cells in
  solar batteries industry

9

SlovakPolish Cooperative Meeting Zilina/Trencin,
27-28 October, 2008
THANK YOU for Your Attention