Power Semiconductor Devices

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Power Semiconductor Devices
Power Diodes
Cross-sectional view of a pn-junction diode
intended for power applications.
I-V characteristics of a pn-junction diode
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Breakdown Voltage of Non-Punch-through Diodes
for silicon.
Breakdown Voltage of Punch-through Diodes
Punch-through in a reverse-biased diode (a)
reverse-biased diode with depletion layer
extending completely across the drift region-
punch-through condition (b) electric field
profile of the punch-through condition in a
reverse-biased diode
doping in the n- drift region is negligible
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Depletion Layer Boundary Control
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Depletion Layer Boundary Control
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On-State Losses Role of On-Resistance
Turn-On Transient
Turn-Off Transient
Reverse Recovery
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Schottky Diodes
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Power MOSFETs
Basic Structure
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Power MOSFETs
Basic Structure
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Power MOSFETs
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Insulated Gate Bipolar Transistor
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Insulated Gate Bipolar Transistor