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Figure 2. Physical properties of ZnO microtubes.

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Microwave Growth and Characterization of Zinc Oxide Single Crystal Microtubes for Optoelectronic Applications Jiping Cheng & Ruyan Guo, Pennsylvania State University ... – PowerPoint PPT presentation

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Title: Figure 2. Physical properties of ZnO microtubes.


1
Microwave Growth and Characterization of Zinc
Oxide Single Crystal Microtubes for
Optoelectronic Applications
Jiping Cheng Ruyan Guo, Pennsylvania State
University (DMR-0505946)
  • A novel microwave growth technique has been used
    for fabrication of high quality and high purity
    ZnO single crystal microtubes with unique
    crystalline structure and excellent
    opto-electronic properties.
  • The microwave grown ZnO microtubes are
    colorless, fully transparent, and of near-perfect
    crystallinity as shown in Fig. 1. The wall
    thickness of the ZnO microtubes is typically
    between 0.5-1 mm. By adjusting microwave growth
    parameters, the ZnO tubes can be fabricated into
    various cross-sectional dimensions ranging from
    100 to 250 mm and different length up to 5 mm.
  • Some unique physical properties of ZnO single
    crystal microtubes shown in Fig. 2 indicate
    potential applications of ZnO microtubes in
    optoelectronic devices
  • (A) The photoluminescence Spectra at
    room-temperature shows strong near band-edge
    emission for light emission applications deep as
    deep blue LEDs and laser diodes.
  • (B) ZnO microtubes demonstrated high ultraviolet
    (UV) photoresponse that can be used as UV
    detection devices.
  • (C) The strong electric field emission
    properties of the ZnO microtube reveal a
    promising application in flat panel display
    devices.
  • P-type ZnO regions are formed successfully with
    verification of I-V characteristics. The
    significant results are the potential increase of
    solubility limit by the microwave-assisted plasma
    processing to make p-n junction on ZnO crystals
    for the optoelectronic applications.

Figure 1. SEM images of ZnO microtubes.
Figure 2. Physical properties of ZnO microtubes.
(A) Photoluminescence spectra. (B)
Photoresponse spectra. (C) Electrical field
emission properties.
2
Microwave Growth and Characterization of Zinc
Oxide Single Crystal Microtubes for
Optoelectronic Applications
Jiping Cheng Ruyan Guo, Pennsylvania State
University (DMR-0505946)
  • Education and Outreach
  • Paris Y. Liu, graduate student, passed her PhD
    candidacy exam and is making excellent progress
    in this research project conducting fabrication
    and characterization of p-n junction on ZnO
    crystals.
  • Piezoelectric properties of ZnO microtubes are
    investigated using high precision optical
    interferometer method. Microtube ZnO is found to
    have larger d33 coefficient than bulk crystals.
  • EE412 Optical Engineering Lab - the
    interferometric measurement set up has been
    adapted and added as an advanced optical
    engineering lab for the undergraduate students of
    Dept. of Electrical Engineering.
  • Technology Transfer the project was represented
    at the Open House, Pennsylvania Center for
    Optical Technologies, 2005 and 2006.
  • REU Hosting Lab tour for undergraduate students
    participating in NSF EEREU program (Dr. Guo
    serves as PI in EEREU program).
  • Several talks on fabrication and characterization
    of ZnO microtubes and related crystal materials
    were presented at professional conferences.
  • Collaborative Research Lehigh University and
    Penn State University have formed partnership
    through Center for Optical Technologies (COT),
    funded by the Commonwealth of Pennsylvania. The
    early effort developing the ZnO microtubes was
    supported through COT seed grant and
    collaboration.

Paris Y. Liu, a graduate student, is using the
microwave plasma PVD system to fabricate p-n
junction on ZnO single crystal materials.
The PI, Dr. Cheng, gives a invited talk entitled
Advancements in microwave fabrication of ZnO
crystal materials at the 2005 International
Workshop on Advanced Material held in Wuhan
University of Technology, China.
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