ANNEALING EFFECTS ON SEQUENTIALLY SPUTTERED

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ANNEALING EFFECTS ON SEQUENTIALLY SPUTTERED Co -
HfO2 GRANULAR FILMS
Poster Number- 7
Presenter M. Chadha Information Storage
Materials Laboratory National University of
Singapore
Granular Systems Exhibit Tunneling
Magnetoresistance (TMR) along with high
resistivity and soft magnetic properties.
Attractive For Applications such as magnetic
sensors, information storage media and high
frequency devices, etc.
One Of The Issues The TMR effect is diminished
due to presence of antiferromagnetic component
cobalt oxide formed during deposition.
Addressed By - A Exploring a new granular
system, Co- HfO2.
B Further annealing of the as-sputtered
films. Motivated By The HfO2 has higher heat of
formation than other oxides.
Results (1) The as-sputtered Co-HfO2 granular
film contains smaller amount of cobalt oxide as
compared to other systems. This amount decreases
further with annealing. (2) The MR ratio is
enhanced from 1.21 of as-sputtered film to 3.01
for films annealed at 373 K. (3) The magnetic
properties are dramatically changed with
annealing, showing a co-relation with the MR
properties.