Proposed at Feb 2004 Team Meeting Subteam activities:

1
Proposed at Feb 2004 Team MeetingSub-team
activities
Materials Chemistry and Analysis

• Quantify Cu-Te-O chemistry
• Determine chemical-electronic relationships
• Determine role of O2 during CdTe deposition and
  CdCl2 treatment
• Determine role of interfaces, grain boundaries,
  surfaces, microstructure
• Identify grain defects
• Identify electronic defects

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Pressing Sub-Team Questions
1. How does CdTe/CdS processing chemistry affect
defect formation and distribution, how do these
defects limit or enhance device operation and
stability, what is the processing sensitivity,
how do we measure them, and what effect do they
have on device simulations and modeling of device
behavior? 2. Can we separate fundamental device
performance limits from processing-related
limitations? 3. Do film structure and morphology
exert a direct influence on device operation, or
do they merely change the kinetics during film
growth, treatment and contacting?
3
Materials Chemistry and Analysis Team Scope
Device Modeling (Simulations vs Data Modeling)
Cell Processing
Electronic Defect Formation
Film Chemistry
Device Operation
J-V, C-V, QE
PL
EDS, XRD, XPS, AES
Intrinsic
Cd, Te, O, Cu, Cl
Recombination Transport Fermi level Bands
Extrinsic
Grain Surfaces Grain Boundaries Grain Interior
Complexes
4
Materials Chemistry and Analysis Presentations
Alan Fahrenbruch, "Choosing Defects for Device
Modeling" Al Compaan, "Photoluminescence Studies
of CdTe Crystals with Cu, Cl and P Ion
Implantation" Caroline Corwine, "Luminescence
Studies on Cu and O Defects in Crystalline and
Thin-Film CdTe" Al Enzenroth, "Steady State
Photocapacitance Study of CdS/CdTe PV
Devices" Fred Seymour, "Cu and CdCl2
Influence on Deep Defects Detected in CdTe Solar
Cells" Brian McCandless, "Sensitivity of Thin
Film CdTe Device Operation to Processing
Chemistry"