Research of CNST

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???????? University System of Taiwan (UST) ???????
? Center For Nano Science And Technology (CNST)
IC-DFN Workshop, Hualian, January 06, 2006
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Establishment

• UST -- Consisted of four national universities,
  i.e.
• National Central University (NCU),
• National Chao Tung University (NCTU),
• National Tsing Hua University (NTHU),
• National Yang Ming University (NYMU).
• CNST -- Formally established on September 4, 2003
• after one year of preparation.

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Objectives

• ?Creating a center of excellence in nano
  science and technology, one of the most
  important developing technology areas in the
  21st century
• ?Establishing core facilities and common labs
  to serve researchers in UST and other
  institutions and high tech companies
• Promoting Taiwans nanotechnology through
  education, research, training courses, and
  collaborative research with Taiwans high tech
  industry
• Putting UST CNST on the World map of nanocenters

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Network of CNST with Other Related Research
Institutions in Hsinchu area
NTRC, ITRI(Nano Technology Research Center)

NSRRC (National Synchrotron Radiation
Research Center)
NCIC (National Chip Implimentation Center)

PIDC(Precision Instrument Development
Center)
NDL(National Nano Device Laboratories )
UST CNST
NCHC(National Center for High-performance
Computing)
Science ParkHigh-tech Industries
NHRI (National Health Research Institutes )
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Budget
2002/10 2003/09 Capital NTD 79,198,000
2003/01 2003/12 Capital NTD 62,991,080
2003/01 2003/12 Expense NTD 30,230,920
Total Total NTD 172,420,000
About 5.2 M US dollars
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Budget
2003/12 2004/11 Capital NTD 37,440,000
2003/12 2004/11 Expense NTD 16,045,714
2004/5 2005/11 Capital NTD 30,096,000
2004/5 2005/11 Expense NTD 20,064,000
Total Total NTD 103,645,714
About 3.1 M US dollars
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• Action Plan
• Promoting academic exchange
• Strengthening teaching and training of personnel
  in the field of nano science and technology
• Establishing core facilities and common labs
• Advancing academic research

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UST CNST Research Areas and Common Labs
Nano-electronics
UST CNST Common Labs NTHU Center Common Labs NCTU
Branch Common Labs NCU Branch Common Labs NYMU
Branch Common Labs
MEMS clean room
TCFST semiconductor clean room
Nano-photonics
Nano-biotechnology
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UST NCST Core Facilities(I) (1)Clean
Room Total areas
are about 1030 m2, details as follows
Clean Room Areas (m2 ) Remark
Class 10 40 Special purpose
Class 100 300 Mostly MOS
Class 10000 450 Mostly MEMS
Class 1000 240 Nanolithography and nanoprocessing
Total 1030
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UST NCST Core Facilities (II)
(2) Equipments

Technology Equipments
Thin Film Deposition Furnace, LPCVD, APCVD, PECVD, DC-Sputter, E-Gun, RF-Sputter
Lithography PR-Coater, Aligner, PR Stripper, Double-Side Aligner, Anodic Wafer Bonder
Wet Cleaning/Etching Wet Etching Bench, RCA clean Bench, THAH/KOH Bench
Dry etching RIE, Metal-RIE, ICP, XeF2 Etcher
Mask Maker Laser Mask Maker
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2003 National Nano Core Facilities Program
FY Equipments Location
2003-2004 Low Temp./High Magnetic Field System UST-NCTU
2003-2004 High-Resolution Transmission Electron Microscope UST-NCTU
2004-2005 MBE UST-NCTU
2004-2005 ICP-RIE for III-V Compound UST-NCTU
2004-2005 High Resolution X-Ray Diffractometer UST-NCU
2005-2006 Sb Based Molecular Beam Epitaxy UST-NCU
Total grant 114,000,000 NTD 3.45 M USD
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2004 National Nano Core Facilities Program
FY Equipments Location
2004-2006 Nano-imprint lithography system UST-NTHU
2004-2006 Near-field scanning magnetic optical microscope UST-NTHU
2004-2007 Live-cell/tissue imaging system UST-NYMU
2004-2007 Functional modules for bio-study UST-NYMU
2004-2007 Multi-probe system upgrade UST-NTHU
2005-2007 E-beam lithography system (pending for more funding) UST-NTHU
Total grant 82,960,000 NTD 2.51 M USD
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2002 Major Core Equipments Acquisition
Item Equipment Location Current status
1 Multifunctional Solution Atomic Force Microscope NTHU Purchasing completed, operation tested, open to general users
2 Multi-probe Nano-Electronics Measurement System NTHU Purchasing completed, operation tested, open to general users
3 AL-CVD System NTHU Purchasing completed, operation tested, Accepting orders
4 Simplified Laser Tweezers System NTHU Purchasing completed, operation tested, Collaborations welcomed
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Multi-probe Nanoelectronics Measurement System
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Single-CNT Manipulation Step by Step
Single-CNT origin position
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2004 National Nano Core Facilities Program
FY Equipments Location
2004-2006 Nano-imprint lithography system UST-NTHU
2005-2007 Near-field scanning magnetic optical microscope UST-NTHU
2004-2007 Live-cell/tissue imaging system UST-NYMU
2004-2007 Functional modules for bio-study UST-NYMU
2004-2007 Multi-probe system upgrade UST-NTHU
2005-2007 E-beam lithography system (pending for more funding) UST-NTHU
Total grant 82,960,000 NTD 2.51 M USD
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The Nanoimprint Lithography Facilities
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Ministry of Economics Affair 2005 Program for
Developing Industrial Technologies Main
proposalNext generation Nano CMOSFET
Technologies (PIHui Liang Hwang)
Subproject AALCVD high-K Materials and
Characterization
(Co-PIRaynient Kwo, and T.B. Wu)
Subproject BMetal-gate/high K integration
(Co-PI Albert Chin and
K.M. Chang) Subproject C Carbon
Nanotube FET (Co-PI
C.H. Tsai and K. J. Hwang)
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Research Programs

• Nanoelectronics
• High-k Materials and Nano Devices
• Devices based on Nano Tubes, Wires and Dots
• Spintronics
• Nanophotonics
• Semicondutor-Based Quantum-Dot Light Sources and
  Detectors
• Nano Organic-Based Photonics
• Photonic Crystal Devices
• Nanobiotechnology
• Single Molecule/Cell Detection and Manipulation
  
• New Tools for Bio Research
• Biomimetic Devices

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Advancing Academic Research2003 Research
Programs
Nano-electronics 4
Nano-biotechnology 5
Nano-photonics 3
The total number of participating professors 35 The total number of participating professors 35
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Advancing Academic Research2004 Research
Programs
Nano-electronics 3
Nano-biotechnology 8
Nano-photonics 8
The total number of participating professors 80 The total number of participating professors 80
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Advanced High k Dielectrics for Nano-Electronics
PI and Co-PIsMing-Hui Hong (NTHU)?Raynien Kwo
(NTHU)?Hui-Liang Huang (NTHU)?Albert Chin (NCTU)
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Intel Semiconductor CMOS Scaling Road Map
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Electrical Properties of the High k Gate
Dielectrics
Good News !!
Low electrical leakage is common, EOT under
1.2-1.4 nm

• Major problems
• High interfacial state density
• Large trapped charge
• Low channel mobility
• Electrical stability and reliability

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Advanced Hig?h k Dielectrics for Si-CMOS
Interfacial Structure and Thermal Stability
HRTEM
MEIS Study With Rutgers University
As grown HfO2 on Si By MBE
HfO2 50
Å
Si(100)
After annealing up to 950C
Broadening of the O peak and small increase in
the Si peak indicate some interfacial SiO2
formation 0.4nm wide.
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C-V Electrical Characteristics
Comparison between the MBE and ALD films
Corrections were applied by an improved
two-frequency method to remove mostly the
frequency dispersion.
Our MBE grown Au/HfO2/Si diodes are denoted in
red hexagons
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Summary of High k Gate Dielectrics of HfO2 for
Si

• Have demonstrated for the first time an
  atomically abrupt HfO2/Si interface free of SiO2
  or silicate formation by our MBE method
• At lower anneal temperature(lt530oC), the
  interface between HfO2 and Si shows good thermal
  stability. At higher anneals gt 630C, an thin,
  but stable interfacial layer 0.4 nm thick
  appears up to 950C.
• Have achieved low leakage current density HfO2
  film(0.4A /cm2 at 1V ) with an EOT of 0.9 nm.
• Plan to improve the quality of epitaxial growth,
  interfacial structure formation, and electrical
  properties.

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Other than HfO2
Epitaxial Crysalline Oxides on Si
A. Single crystalline Al2O3 (k 9)on Si (111)
B. Single crystalline Sc2O3 (k 12) on Si (111)
Single crystal x-ray scan of Sc2O3 3.1 nm thick
along the surface normal of Si (111)
A single-crystal scan along the surface normal,
and single crystal scan on a ?-Al2O3 044
Phi-cone.
HRTEM cross-sectional micrograph of Sc2O3, Si,
and their interface
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La2O3 for EOTlt1.0 nm
Our developed La2O3 has potential to achieve EOT
lt1.0 nm for high-k beyond HfO2, according to H.
Iwais paper. The moisture problem is also solved
by our recent work!
H. Iwais paper _at_ IEDM 2002 (IEEE ED president,
Ebers Award owner)
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MBE Clustered Tool Now Located in Nano Center,
ITRI
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New High k dielectrics on III-V semiconductors
B. Depletion mode GaAs MOSFET with Ga2O3Gd2O3
oxide as gate dielectric
A. HfO2 on GaAs (100)
MOSFET top view and angle view of the finished
device.
Leakage current density J(A/cm2) vs E field
(MV/cm) for HfO2/GaAs films grown at room temp.
(amorphous), and 320oC (epitaxial)
MOSFET drain current at different gate bias and
the trans- conductance (Gm) with maximum Gm of
171 mS/mm
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Carbon Nanotube-based Nanoelectronics
PI Prof. C. H. Tsai chtsai_at_ess.nthu.edu.tw http
//www.ess.nthu.edu.tw/cnt/index.htm
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The Challenges

• Positioning of the CNTs on the designated
• locations with controlled orientations.
• (2)Controllability of desired chirality and
• electronic properties of CNTs.
• (3)Low contact resistance from CNTs
• to the electrodes.

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ICP Plasma-enhanced CVD (K.C. Leou, C.H. Tsai,
NTHU)
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Control of Nanocatalyst Size for CNT Synthesis
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In-situ Growth of Single-Wall CNTs
? E-beam Lithography
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Directional Control and Lateral Growth of SWNTs
Across the Electrodes
(3) Direct synthesis of suspended SWNTs using
sharpened CNFs as templates

• in-situ post-treatment
• Feed gas Ar 6 sccm,
• Pressure 20 mTorr,
• ICP Power 1500 W,
• Self-bias voltage 400 V,
• Surface Temp 550 oC,
• Treatment Time 20 min

• ICP-CVD growth
• C2H2/H2/Ar 8/24/0.5 sccm,
• Pressure 20 mTorr,
• ICP Power 1000 W,
• RF Bias Power 300 W
• Surface Temp 550 oC,
• Growth Time 10 min

C. H. Weng et al, Appl. Phys. Lett. 85, 4732
(2004).
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Directional Control and Lateral Growth of SWNTs
Across the Electrodes

• Thermal CVD growth
• CH4/H2 180/20 sccm,
• Pressure 760 Torr,
• Temperature 900 oC.
• Growth Time 30 min

Raman spectrum at one SWNT level
The absence of PL-like background
D/G
The splitting of G-band peaks (each FWHM 7
cm-1 after de-convolution)
RBM
No RBM(resonant with the scattered photons)
PL-like background (from PT-CNF templates)
C. H. Weng et al, submitted to Nano Letters.
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Metal/CNT Contact Resistance
An aligned process to form multiple metal / CNT
contacts are developed.
Contact resistance is strongly dependent on the
heat of formation of metal oxides and is almost
independent on metal work function. (B.Y. Tsui,
NCTU)
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In-situ Catalytic Growth of SWNTs
Pretreatment Ar 400 sccm /
NH3 80 sccm 1 Torr 900 ?
10 min Growth CH4 200 sccm / H2 10 sccm
760 Torr 900 ? 5 min
K.Y. Shih et al. 1st Int. Conf. on
One-dimensional Nanomaterials (ICON), Jan. 10-14,
2005 J. Vac. Sci. Technol. B, under review.
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Semiconductor Nanoelectronics
PI and co-PIs J.-I. Chyi , T.-M. Hsu, C. P. Lee
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InAs Quantum Dot Array
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Multi-color QDIP for LW IR Detection
Upper Stack
Lower Stack
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1.3 ?m Quantum dot laser

• 1.33 mm QD lasers on GaAs substrate with output
  power as high as 138 mW under pulsed operation
• 1.33 mm QD laser with low threshold current (50
  mA) and high internal quantum efficiency (63 )
  under CW operation

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1.55 mm Quantum Dot Emission

• InAs QDs with Emission wavelength of 1.55 mm and
  a narrow linewidth (30 meV)
• 1.47 mm light-emitting diodes

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Single Photon Source

• Single QD emission spectrum is obtained through
  an e-beam defined nano-aperture (100-500 nm).
• Single photon source form the single exciton
  state is confirmed by time-correlated photon
  counting measurements.

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Quantum Dot in Photonic Crystal Microcavity
Q2500
a 0.44

• The spontaneous emission from InAs QDs is
  successfully coupled into the resonant mode of a
  single-defect photonic crystal membrane
  microcavity.

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Stacked layers of quantum wires InAs/InGaAs

• 3ML InAs

InAs

• Characteristics
• 2540 nm width
• 24 nm height
• No dislocation
• QWrs
• Spatial Correlation

InGaAs
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Stacked layers of quantum wires InAs/InAlAs

• 3.75ML InAs

InAs

• Characteristic
• 1423 nm width
• 24 nm height
• No dislocation
• QWrs
• Spatial Anti-Correlation

InAlAs
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Nanobiotechnology-Based Studies on Cell and
Biomolecular Activities
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Applications of Patterned Growth Substrates for
Nerve Regeneration
Patterned substrate
Homogeneous substrate
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Patterned Growth Substrates
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Molecular dynamics and interactions following
ligand binding to integrinaIIbb3 in living cells
??? NYMU ??? NYMU ??? NYMU ??? NCTU ??? NCU
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Adhesion molecule involve in cell-cell and
cell-substrate interaction
Lodish et al. Molecular cell biology
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Current Progress

1. A variety of photonic tools are used in
   combination with conventional life science
   methodologies to address molecular dynamics and
   molecular interactions in living cells using
   integrin biology as a paradigm.
2. Binding strength between a single molecular pair
   of ligand and integrin receptor can be determined
   by optical tweezers-based measurement.
3. Ligand binding to the integrin appears to induce
   lateral molecular associations on the plasma
   membrane between the receptor and two ion
   exchangers such interactions can be detected and
   monitored by time-resolved fluorescence analyses.
   

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A Nano NMR for High-Sensitivity Biomolecule
Analysis
PI Long-Sheng Fan ??? (Institute of MEMS,
NTHU) Co-PIs Po-Jeng Chu ??? (Chemistry,
NCU) Jay Yeh ??? (Institute of MEMS,
NTHU) Wen-Guey Wu ??? (Life Science, NTHU)
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Nano-NMR
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Project Status Summary

• Initial micro RF coil design completed.
• Base-line microfabrication process for RF coils
  established.
• Prototype nano NMR made.
• In the process of interface optimization for
  measurements.

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Looking for Early-Stage Collaborators

• Access and interface to a 800MHz NMR system, a
  small-animal 7T MRI system.
• Compact 14T NMR magnet construction.
• Collaborations in NMR studies in the development
  of cluster of stem cells, small blood vessels,
  nervous cells etc. and the inter and
  intracellular signaling and metabolic pathways.
• Other biomedical and life science applications of
  submicron imaging and manipulations.

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Thank you for your attention!