Nikhef Annual Meeting 13 Dec 2001 Future Vertexing

1
Nikhef Annual Meeting13 Dec 2001 Future
Vertexing

• Els Koffeman
• for
• Nikhef Vertex Group

2
Topics

• No report on Zeus, Hermes, Alice, LHC-B, Atlas
  in spite of much progress
• No report on beautiful infrastructure
• RD vertex detectors
• Very High Luminosity Hadron Colliders
• Extreme radiation hardness (1x 1016 /cm-2)
• Linear Colliders
• High precision (1-5 micron point resolution)
• Low material (0.1 X0 per layer)
• small detectors
• Medipix
• Time Projection Chamber

3
Electronic Department

• Recent projects
• Alice analoge buffer/line driver, digital
  control ic (jtag glue logic), power supply is
  prevented for single event latchup
• LHCB analog line driver en comparators voor
  beetle chip
• pixel 4 bits adc per pixel
• zeus fail safe token voor helix
• general low noise amplifier
• Four FTE engineers working on VLSI
• Education
• EPFL (Lausanne)
• Advanced Analog IC Design (5 people)
• Advanced Digital IC Design (3 people)
• Practical Aspects in Analog Mixed Mode ICs (3
  people)
• Transistor-level Analog IC Design (2 people)
• expected low voltage analog IC (2 people)

4
Quick Reminder

• Silicon as a sensor
• 300 micron thick wafer
• High resistivity, purity
• Surface strips, pixels, pads
• Silicon as readout
• Poor quality wafer
• Photolitography makes Integrated Circuits
• All structure contained in few micron thickness
• Most important component is transistor
• Current technology CMOS 0.25 micron

Silicon pixel,pad,strip
contact
gate
P
5
Signal!
6
Crystal Damage ! (vacancy, interstitials)
Leakage currents Need High Voltage Less collected
charge
Charge generation Inside CMOS!
Transistor performance degrades Chip blows up
7
RD vertexing

• CERN
• RD 19 Pixels
• RD 39 Cryogenic operation of silicon
• RD 42 Diamond detectors
• RD 48 ROSE radhard silicon
• RD 49 Radhard Electronics
• Proposal for new RD group
• LCFI (linear collider flavour identification)
• CCD detector for TESLA
• 8 UK institutes, CERN, SLAC
• MIMOSA
• Monolithic pixels
• Proposal submitted to DESY PRC
• Strassbourg, Geneve, Nikhef, Liverpool, Glasgow,
  RAL,

8
Radiation Hardness of Silicon

• The leakage current damage parameter is material
  independent
• Radiation damage very different for different
  particles (expressed in hardness factor K)
• 24 GeV protons K 1
• Slow neutrons K0.9
• Fast neutrons K1.7
• Gamma 60-Co K2x10-6
• Effective doping changes (or increasing
  depletion voltage) improved by oxygenation of the
  material
• A macroscopic damage parameter model has been
  developed which can be used to predict detector
  parameters in a given radiation environment
  including annealing effects

9
Radiation harder with oxygen?

• Two methods were found to highly oxygenate
  silicon.
• Firstly, at the ingot growing stage.
• Secondly by diffusion of oxygen into ANY wafer
  using a high temperature drive-in
• Technology has been successfully transferred to
  several silicon detector manufacturers
  (SINTEF,Micron, ST, CIS) and full-scale
  microstrip detectors have been produced.

10
Pixel systems

• MCM multi chip module
• traditional 300 um thick pixel sensor bump
  bonded to a chips with amplifiers and readout.
• CCD
• Charge collection in thin surface layer
• charge transferred through the wafer
• Monolithic pixel
• use standard CMOS wafer
• simple readout per pixel

chip
sensor
Surface
sensor
sensor
11
Monolithic Pixels

• No depletion layer
• charge diffusion only
• lt 1000 electrons
• cell
• Monolithicpart of the CMOS is used as detector
  element
• Will it work ?

12
MIMOSA - I
4000 pixels !
1.2 x 1.2 mm2
13
MIMOSA
Signal / noise 40 Efficiency 99 Resolution
NIKHEF proposed a ladder concept thickness 0.05
mm 12 cm long 3 x 2 cm wide 0.9 g silicon
0.8 g support
14
Diamond Pixel detector
15
Medipix- recent developments

• Chip Design (0.25 mm) (TMR EU project)
• DAC's for Alice/LHCb chip (radhard)
• DAC's for Medipix2 chip
• MUROS2 Interface for Medipix2
• Multi-Chip Board for 2x4 multichip Medipix2
  imager
• Dynamical Defectoscopy
• micro-crack development in Aluminium (Marie Curie
  EU project)

16
Multi-Chip Board
Vbias
PCDIO
Chipboard
MUROS2
10 Mhz
SCSI-5 Cable 160 Mhz LVDS
8 ASIC chips Medipix2 chip size 14 x 16
mm2 1 Sensor 28 x 56 mm2 (fully sensitive
area) 512 x 1024 Pixels of 55 x 55 mm2
(0.5 Megapixel) Prototype, useful for e.g. Small
Animal Imaging
17
3 different micro ADC's
David San Segundo Bello
lt100 x 100 mm area lt1 mW power
18
Chipboard Top layer metal
High Density Interconnect Technology 9 metal
layers (5 in kapton build-up) 1840 staggered
m-via's 366 drilled-through via's 80 SMT
capacitors
19
X-ray Defectoscopy
Si
GaAs
Si FlatField Correction
5 mm
0.5 mm
20
TPC for a linear collider

• Traditional TPC signal collected on wires
• Principle of GEM introduced by Sauli
• Used in conjunction with MSGCs or plain
  electrodes
• New idea get the electrons directly in a chip!
• (Harry v.d Graaf, Jan Visschers, Erik Heijne)
• If successful (with 60 60 micron pitch)
• Resolution limited by diffusion
• Optimise gas max for this
• Much better track separation
• Can improve all time favorite Aleph TPC with
  30-40

21
TPC medipix chip
Medipix chip
kathode
Sensitive area
1mm
1m
GEM
22
TPC plans

• Build proto type
• If charge measured gt connect to Medipix chip.
• Develop prototype for TESLA.
• Need 15 m2 of chips!

23
Conclusion.

• Medipix
• Diamond
• CMOS sensors
• micro-electronics
• Novel TPC

RD is in good shape
we need a vertex group !
Do we need a vertex group ?
24
(No Transcript)