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To develop active semi-conductor devices and rf amplifier systems, including ... Joz Sly. James Sexton. A. Bouloukou. Sobih. Plus many, many more! ACKNOWLEDGEMENTS ...
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Large gate periphery InGaAs/InAlAs pHEMT: Measurement and Modelling for LNA ... A. Sobih, A. Bouloukou, S. Boulay, J. Sexton, T. Tauqueer, J. Sly and M. Missous ...
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Base de datos de desastres. Un nuevo modelo experimental Dr. A. Rossodivita Fundaci n San Rafael Italia Red del Supercurso y Supercurso de Salud Global ...
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... WHY? Gate leakage due to impact ionization! 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 NFmin (dB) ... (GHz) NFmin (dB) LNA Elements InGaAs/InAlAs pHEMTs Noise ...
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Albert-Jan Boonstra (chair from July'06)), ASTRON, ... Mike Jones, University of Oxford, United Kingdom. Alan Langman, SKA Project ... re-ordering prior ...
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