GPD Optoelectronics Corp.

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GPD Optoelectronics Corp.

• Company Overview
• May, 2004

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Outline

• Company Overview
• Products
• R D
• Tour

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Company History

• 1973 Founded (as Germanium Power Devices
  Corp.)
• 1980 Introduced Ge pn detector products
• 1993 Introduced InGaAs detector products
• 2000 Relocated to Salem, NH, doubling
  capacity

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Company HeadquartersSalem, NH
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Facilities

• 28,000 square feet includes
• 1,000 Square feet Class 1,000 Cleanroom
• 6,000 Square feet Class 10,000 Cleanroom
• 8,000 Square feet Manufacturing Test
• 6,000 Square feet Offices

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Products

• Germanium Detectors
• p-i-n and p-n detectors
• Standard
• Large area
• Two-Color detectors
• Avalanche photo diodes
• InGaAs Detectors
• Large area
• High speed

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Research Development

• InGaAs avalanche photodiode
• High linearity, low-distortion InGaAs pin
• Low PDL detectors
• Cryogenic Ge diodes and transistors
• Cryogenic SiGe diodes and transistors

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Company Tour
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Photolithography
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Photolithography
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Etching
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Deposition, Metallization
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Optical Characterization
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Wire Bond, Die Bond
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Fiber Pigtailing
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Cryogenic Measurement