Title: Logic Gate Delay Modeling -1
1Logic Gate Delay Modeling -1
- Bishnu Prasad Das
- Research Scholar
- CEDT, IISc, Bangalore
- bpdas_at_cedt.iisc.ernet.in
2OUTLINE
- Motivation
- Delay Model History
- Delay Definition
- Types of Models
- -RC delay Models
- -Logical Effort
- Limitation of Logical Effort
- Summary
3Motivation
- Why Model is required?
- For fast simulation
- Solving differential equation is difficult
- For creating optimal design
- Real design will be always more costly and time
consuming.So model is used to simulate the system
before actual implementation.
4Types of Models
- Physical Models
- Based on Physical phenomena of device
- Empirical Models
- Based on curve fitting ( i.e. Quadratic,Cubic
etc.) - No physical significance.
- Table Models
- Storing the data in a Lookup Table
- Do interpolation between stored data
5Delay Model History
Courtesy Synopsys
6Delay Definitions
- tpdr rising propagation delay
- From input to rising output crossing VDD/2
- tpdf falling propagation delay
- From input to falling output crossing VDD/2
- tpd average propagation delay
- tpd (tpdr tpdf)/2
- tr rise slew
- From output crossing 0.2 VDD to 0.8 VDD
- tf fall slew
- From output crossing 0.8 VDD to 0.2 VDD
7Delay Definitions
- tcdr rising contamination delay
- From input to rising output crossing VDD/2
- tcdf falling contamination delay
- From input to falling output crossing VDD/2
- tcd average contamination delay
- tpd (tcdr tcdf)/2
8Delay Definitions
- tpdr rising propagation delay
- From input to rising output crossing VDD/2
- tpdf falling propagation delay
- From input to falling output crossing VDD/2
- tpd average propagation delay
- tpd (tpdr tpdf)/2
- tr rise time
- From output crossing 0.2 VDD to 0.8 VDD
- tf fall time
- From output crossing 0.8 VDD to 0.2 VDD
9Delay Definitions
- tcdr rising contamination delay
- From input to rising output crossing VDD/2
- tcdf falling contamination delay
- From input to falling output crossing VDD/2
- tcd average contamination delay
- tpd (tcdr tcdf)/2
10RC Delay Models
- Use equivalent circuits for MOS transistors
- Ideal switch capacitance and ON resistance
- Unit nMOS has resistance R, capacitance C
- Unit pMOS has resistance 2R, capacitance C
- Capacitance proportional to width
- Resistance inversely proportional to width
11Example 3-input NAND
- Sketch a 3-input NAND with transistor widths
chosen to achieve effective rise and fall
resistances equal to a unit inverter (R).
12Example 3-input NAND
- Sketch a 3-input NAND with transistor widths
chosen to achieve effective rise and fall
resistances equal to a unit inverter (R).
13Example 3-input NAND
- Sketch a 3-input NAND with transistor widths
chosen to achieve effective rise and fall
resistances equal to a unit inverter (R).
143-input NAND Caps
- Annotate the 3-input NAND gate with gate and
diffusion capacitance.
153-input NAND Caps
- Annotate the 3-input NAND gate with gate and
diffusion capacitance.
163-input NAND Caps
- Annotate the 3-input NAND gate with gate and
diffusion capacitance.
17Elmore Delay
- ON transistors look like resistors
- Pullup or pulldown network modeled as RC ladder
- Elmore delay of RC ladder
18Example 2-input NAND
- Estimate worst-case rising and falling delay of
2-input NAND driving h identical gates.
19Example 2-input NAND
- Estimate worst-case rising and falling delay of
2-input NAND driving h identical gates.
20Example 2-input NAND
- Estimate rising and falling propagation delays of
a 2-input NAND driving h identical gates.
21Example 2-input NAND
- Estimate rising and falling propagation delays of
a 2-input NAND driving h identical gates.
22Example 2-input NAND
- Estimate rising and falling propagation delays of
a 2-input NAND driving h identical gates.
23Example 2-input NAND
- Estimate rising and falling propagation delays of
a 2-input NAND driving h identical gates.
24Delay Components
- Delay has two parts
- Parasitic delay
- 6 or 7 RC
- Independent of load
- Effort delay
- 4h RC
- Proportional to load capacitance
25Contamination Delay
- Best-case (contamination) delay can be
substantially less than propagation delay. - Ex If both inputs fall simultaneously
26Layout Comparison
27Delay in a Logic Gate
- Express delays in process-independent unit
- Delay has two components
- f is due to external loading
- p is due to self loading
t 3RC FO1 delay without parasitic delay
28Delay in a Logic Gate
- Express delays in process-independent unit
- Delay has two components
- Effort delay f gh (a.k.a. stage effort)
- Again has two components
t 3RC FO1 delay without parasitic delay
29Delay in a Logic Gate
- Express delays in process-independent unit
- Delay has two components
- Effort delay f gh (a.k.a. stage effort)
- Again has two components
- g logical effort
- Measures relative ability of gate to deliver
current - g ? 1 for inverter
t 3RC FO1 delay without parasitic delay
30Delay in a Logic Gate
- Express delays in process-independent unit
- Delay has two components
- Effort delay f gh (a.k.a. stage effort)
- Again has two components
- h electrical effort Cout / Cin
- Ratio of output to input capacitance
- Sometimes called fanout
t 3RC FO1 delay without parasitic delay
31Delay in a Logic Gate
- Express delays in process-independent unit
- Delay has two components
- Parasitic delay p
- Represents delay of gate driving no load
- Set by internal parasitic capacitance
t 3RC FO1 delay without parasitic delay
32Effort Delay
- Logical Effort g Cingate/Cin_unit_inv
- Electrical Effort h Cout / Cingate
- f gh (Cingate/Cin_unit_inv)(Cout /
Cingate) - (Cout / Cin_unit_inv)
- (Dactual)ext gh t (Cout /
Cin_unit_inv)3RC - (Cout /
Cin_unit_inv)RCin_unit_inv
CoutR
33Computing Logical Effort
- DEF Logical effort is the ratio of the input
capacitance of a gate to the input capacitance of
an inverter delivering the same output current. - Measure from delay vs. fanout plots
- Or estimate by counting transistor widths
34Catalog of Gates
- Logical effort of common gates
Gate type Number of inputs Number of inputs Number of inputs Number of inputs Number of inputs
Gate type 1 2 3 4 n
Inverter 1
NAND 4/3 5/3 6/3 (n2)/3
NOR 5/3 7/3 9/3 (2n1)/3
Tristate / mux 2 2 2 2 2
XOR, XNOR 4, 4 6, 12, 6 8, 16, 16, 8
35Catalog of Gates
- Parasitic delay of common gates
- In multiples of pinv (?1)
Gate type Number of inputs Number of inputs Number of inputs Number of inputs Number of inputs
Gate type 1 2 3 4 n
Inverter 1
NAND 2 3 4 n
NOR 2 3 4 n
Tristate / mux 2 4 6 8 2n
XOR, XNOR 4 6 8
36Delay Plots
37Delay Plots
- d f p
- gh p
- What about
- NOR2?
38Example Ring Oscillator
- Estimate the frequency of an N-stage ring
oscillator - Logical Effort g
- Electrical Effort h
- Parasitic Delay p
- Stage Delay d
- Frequency fosc
39Example Ring Oscillator
- Estimate the frequency of an N-stage ring
oscillator - Logical Effort g 1
- Electrical Effort h 1
- Parasitic Delay p 1
- Stage Delay d 2
- Frequency fosc 1/(2Nd) 1/4N
40Example FO4 Inverter
- Estimate the delay of a fanout-of-4 (FO4)
inverter - Logical Effort g
- Electrical Effort h
- Parasitic Delay p
- Stage Delay d
41Example FO4 Inverter
- Estimate the delay of a fanout-of-4 (FO4)
inverter - Logical Effort g 1
- Electrical Effort h 4
- Parasitic Delay p 1
- Stage Delay d 5
The FO4 delay is about 200 ps in 0.6 mm
process 60 ps in a 180 nm process f/3 ns in
an f mm process
42Multistage Logic Networks
43Limits of Logical Effort
- Chicken and egg problem
- Need path to compute G
- But dont know number of stages without G
- Simplistic delay model
- Neglects input rise time effects
- Interconnect
- Iteration required in designs with wire
- Maximum speed only
- Not minimum area/power for constrained delay
44Summary
- RC Delay Model
- Delay measurement using Logical Effort Method
- Gate sizing using Logical Effort for minimum
delay - Limitations of Logical Effort
45Reference
- N. H. E. Weste and D. Harris, CMOS VLSI Design,
A circuits and Systems Perspective 3rd edition
Pearson Addison Wesley - Rabaey, Chandrakasan and Nikolic, Digital
Integrated Circuits, a Design Perspective,
Pearson Education