Introduction to Nanoheat; Aspel group

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Introduction toNanoheat Aspel group

• 20030910

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TCAD

• Collision-dominated ? quasi-ballistic

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Double gate device/ quantum confinement
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Conduction subband vs. position
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Electron distribution function vs. position under
high gate bias (top of the barrier)
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Average electron velocity (high gate bias)
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Key concepts to develop a ballistic theory
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E-k relation (top of the barrier) under high gate
bias Vds0/ small/ large
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I-V characteristic for ballistic MOSFET (Tgt0,
nondegenerate)
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Ballistic limit characteristic vs. measured I-V
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Backscattering at the top of the barrier
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Average carrier velocity inversion layer
density (ballistic/ with scattering)
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Effect of scattering within channel
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Key concepts to develop a scattering theory
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The scattering model
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Transmission coefficient under low drain bias
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Relating mean-free-path to a macroscopic quantity
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Transmission coefficient under high drain bias
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Electron injected into the channel undergoing its
first scattering event
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Scattering event in momentum space
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Probability of it returning to the source
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Classical ballistic/ quantum ballistic/
drift-diffusion
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Essential physical picture of steady-state
carrier transport in the nanoscale MOSFET
bottleneck
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Monet

• Continuum classical heat diffusion equation
• Boltzmann transport equation (phonon)
• Q electron-phonon interactions

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Energy transfer process
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• Monte Carlo simulation
• Semi-classical approach
• (1) Scattering rate (2) Free flight (Fma)
• Fermi-Golden Rule

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Heat generation profile (10nm DGSOI)
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Cornell Aspel group

• Primary research area- develop high speed
  interconnect system for chip-to-chip
  communication including receivers, transmitters,
  link architectures in CMOS, and stochastic
  encoding

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Optical properties of sapphire substrate
300nm (6um)
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• Commercial 850nm GaAs/AlGaAs-quantum-well
  vertical-cavity surface emitting lasers (VCSELs)
  and 980nm InGaAs/AlGaAs VCSELs were used as front
  and back emitting structures, respectively.

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A high performance SiGe/Si MQW heterojunction
phototransistor, IEEE Trans. Electron Device
(under revision), 2003
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A 7mW 1Gbps CMOS Optical Receiver For Through
Wafer Communication, accepted Proceedings of the
International Symposium on Circuits and Systems,
2003