[e-mail]

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• ???
• zjqiu_at_fudan.edu.cn
• ???????435?

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???????
????? ??????? ???,???,???(???,???,?????)
???????????
??/???(????)????
???(????)???????MTF?????S
?????/?? ?????? i?/g?(PAC) DUV(PAG)
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??? ?? ??? ???? ??? ?????????? ???
?? ??? ??? ??? ??? ???
???? ??? ???? ??? ?? ???
??????? ???? ???????
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???????? 1???????????????
mJ/cm2mW/cm2sec
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???
Df ????
??g??i???????????????, DUV????
DUV???????,????????,??????????DUV?????????????????
????,??????? ??, g??i???????23,?DUV??????510?
????????,???????????????????,?????????????
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2?????????CMTF (critical modulation transfer
function)????????????????MTF?
?????????????,?????????
??

• CMTF?MTF,?????????
• g??i??CMTF?0.4,DUV??0.10.2?

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????????
1???????????,?????????????
??????!
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2?????????,????????????
DUV?gtARC g??i??gt?????,???????,?????????????????
????
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??????
???

• ??????
• ????
• ????? ???????(HMDS)

??30006000 rpm,0.51 mm
??
??1030 min,90100 ?C
?????????,??????????,?????,???????????
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????,??
?????? ????150 mJ/cm2
?????(PEB)10 min,100 ?C
??3060 s
????????? ????
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??1030 min,100140 ?C
????????????????????????,??????????????
????????????????????,?????????
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Stepper Scan System
??????????? ??? ?????? ???
Canon FPA-4000ES1 248 nm, 8wafer80/hr, field
view 25 mm33 mm, alignment ?70 nm, NA 0.63,
OAI
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??????(lift-off)
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?? ???? (strip)Piranha (H2SO4H2O2)? ????
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????????
??
1?Using light source with shorter l
?? ???(nm) ?? ????
?? 436 g? gt0.5mm
?? 365 i? 0.5/0.35mm
KrF(??) 248 DUV 0.25/0.13mm
ArF (??) 193 193DUV 90/6532nm
F2 (??) 157 VUV CaF2 lenses
????Xe???? 13.5 EUV Reflective mirrors
NGL X??(5Å),???(0.62Å),???(0.12 Å)
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248 nm
193 nm
157 nm
13.5 nm
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2?Reducing resolution factor k1
1.?????? PSM (phase shift mask)
Phase Shift Mask
Normal Mask
???????? ????,????

• Pattern dependent
• k1 can be reduced by up to 40

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????????????? ????,????
Alternating PSM Attenuated PSM
???????????
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2.???????????(RET)
??????OPC (optical proximity correction)
???????????,??????????????
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OPC??
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3??????? OAI (off-axis illumination)
???????????????????????MTF
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OAI???
????1NA(1S)?,R????1?!
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• ???????????????,?????NA,????????
• ????????,????????????(MTF)?????????????1??????????
  ???????????,???????????????????????????????????,??
  ???????????

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4?????????
Mask design and resist process Mask design and resist process
l nm k1
436 0.8
365 0.6
248 0.3-0.4
193 0.3-0.4
Contrast 436,365 nm ?2-3, (Qf/Q0?2.5) 248,193
nm ?5-10 (Qf/Q0?1.3)
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5???????
Lens fabrication Lens fabrication
l nm NA
436 0.15-0.45
365 0.35-0.60
248 0.35-0.82
193 0.60-0.93
Immersion Lithography
Numerical Aperture NAnsina
State of the Art l193 nm, k10.3, NA0.93 ?
R?60 nm
1.36 ? R?40 nm
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45, 32, 22 nm Technology nodes
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EUV
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Minimum feature size
Production 2003 2005 2007 2009 2011
Technology Node 90 nm 65 nm 45 nm 32 nm 22 nm
Half pitch nm 110 105 80 55 39
LG nm 60 42 30 21 16
l193 nm
l193 nm immersion
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EUV(Extreme ultra violet)
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PMMA??? ?????
NGL(next generation lithography E-Beam ??)
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???????1)???!
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???????2)????????????gt??

• ?????
• ???
• ??,????

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???? ????? ??? ???

• ??????, ??????,????? 20 kV
• ???? 100 Å
• ???????

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????????????

• ????(Nanoimprint)
• ????????????????(Sidewall/Spacer transfer
  lithography)
• X??????(XRL)
• ???????(IBL)
• ????????(Shaped Beam / Multi-Column /
  Multi-Beams)

???
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????
????? ?NA??????? ?k1RET?????????
?????
PSM OPC OAI
??
????????????????