Facilities Include:

1
Surrey Ion Beam Centre
Successes
New Projects
Implantation
Analysis

• Facilities Include
• 2 MV Tandem accelerator
• Rapid elemental depth profile techniques include
  RBS, EBS, ERD, PIXE and NRD
• Sub-micro size microbeam with full scanning
  capability
• Advanced sample goniometer for channelling
  spectroscopy
• Automatic data analysis system
• External (in air) microbeam for vacuum sensitive
  samples
• Future Developments
• Just installed state-of-the-art accelerator
• Developing routine, accurate, cheap
  characterisation
• Plan to extend capabilities by installing
• Nano ion beam for nano analysis and proton beam
  lithography
• Vertical ion beam for liquid and biological
  applications
• Continue and expand interaction with both
  University and Industrial groups

• Light from silicon LEDs at room temperature
  (patent)
• Spin-out company formed Si-Light Technologies
• Ion beam synthesis of superconducting MgB2
  (patent)
• Elevated temperature implants, for increased
  thermal stability and larger process window, for
  the production of high resistivity layers in GaAs
• Control of transient enhanced diffusion of boron
  in silicon (2 patents)
• Room temperature formation of ultra-thin (2nm)
  conducting silicides
• DataFurnace for ion beam analysis (sold under
  license)
• Centre supported 48M of grants over 4 years
• Queens Anniversary Prize for Further and Higher
  Education

• Si, SiGe, SOI for CMOS, modelling, TCAD (Philips,
  Applied Materials, Silvaco, ISE)
• Modeling Simulation - energetic molecule
  cluster surface interactions
• Ultra-thin silicides for displays and CMOS
  (Philips/LG)
• Virtual substrates ion beam synthesis, layer
  transfer
• Photonics for silicon laser (and LED), integrated
  optics, III-V compounds (LEDs and lasers)
• Development of ion beam analysis techniques and
  applications for Cultural Heritage and the
  Environment
• Proton beam lithography for high aspect ratio and
  buried structures
• Application of Ion Beams to biomedical
  applications

• Facilities Include
• 2MV High Energy Implanter
• 200kV High Current implanter
• Implantation 2 keV ? 6 MeV
• Sample sizes up to 40cm x 40cm
• Hot (1000 oC) or cold (LN) implants
• In situ measurements can be made
• Sample Chambers in clean room (class 100)
• Up to 10mA beam currents available
• Future Developments
• Precision implantation of novel devices and
  modification of a wide range of materials
• Have state-of-the-art facilities (keV-MeV) -
  (long lifetime)
• Developing ultra-low energy capability - for
  nanotechnology, ion beam deposition, ion beam
  synthesis
• Developing ultra-low-dose capability
• Continue close interaction with both University
  and Industrial groups

• Industrial Users of the IBC include
• QinetiQ
• Applied Materials
• Filtronic
• e2v Technologies
• PRP Optoelectronics
• Bookham Technology
• Philips Research Labs
• Canberra
• FOM-AMOLF NL
• CRP - Belgium
• MATS UK
• Coherent - Germany
• Cascade Scientific
• Mesaphotonics
• LG/Philips
• ABB Switzerland
• Zetec
• EIF