Betsy Natter Instructor

1
Microelectronics, Nanoelectronics and
Electromagnetics Dr. Branimir Pejcinovic, Dr.
Melinda Holtzman and Betsy Natter
Betsy Natter Instructor Phone [phone]Fax
503.725.3807Email natterb_at_pdx.edu EducationM.S
. 1998, Electrical Engineering, Oregon Graduate
InstituteB.S. 1986, Physics, California
Institute of Technology/Caltech Research
InterestsMicroelectronics Semiconductor device
fabrication, optimization, and parameter
extraction.
Betsy Natter is enthusiastic about teaching
undergraduate design classes

• P.K. Wong, B. Pejcinovic, J.J. Lee, and S.T.
  Hsu,
• Characterization and Comparison of SOI and
  Strained-SOI N-MOSFETs,'' Solid-State
  Electronics, in preparation.
• E. Sijercic, K. Mueller and B. Pejcinovic
  Simulation of InSb
• Devices Using Drift-Diffusion Equations,''
  Solid-State Electronics, vol. 49, pp.1414-1421,
  August 2005.
• O. Woywode and B. Pejcinovic, Nonlinear Second
  Order
• Current Cancelation in HBTs,'' Solid-State
  Electronics, vol. 41, no. 9, pp. 1321--1328,
  1997.
• M. Persun, B. Pejcinovic and S. Zhou, Design
  of Si and SiGe p-Channel SOI MOSFET,''
  Solid-State Electronics, vol. 41,
• no. 5, pp. 761--769, 1997.
• B. Pejcinovic, H.K. Tang, J.L. Egley, L.R.
  Logan, and G.R. Srinivasan, Two-dimensional
  tensor temperature extension of the hydrodynamic
  model and its application,'' IEEE Trans.
  Electron Devices, vol. 42, no. 12, pp.
  2147--2155, 1995.
• B. Pejcinovic, T.-W. Tang, S.-C. Lee, and D.H.
  Navon,
• A Numerical Study of Performance Potential of
  Si_1-xGe_x Pseudomorphic Heterojunction
  Bipolar Transistors,'' IEEE Trans. Electron
  Devices, vol. 39, no. 9, pp. 2021-2027, 1992.
• B. Pejcinovic, L.E. Kay, T.-W. Tang, and D.H.
  Navon,
• Numerical Simulation and Comparison of Si BJTs
  and Si_1-xGe_x HBTs,'' IEEE Trans. Electron
  Devices, vol. 36, no, 10, pp. 2129-2137, 1989.
• B. Pejcinovic, T.-W. Tang, and D.H. Navon,
  High-Frequency Characterization of
  Heterojunction Bipolar Transistors Using
  Numerical Simulation,'' \em IEEE Trans. Electron
  Devices, vol. 36, no. 2, pp. 233-239, 1989.

• Selected Publications
• M.B. Tayahi, B. Johnson, M. Holtzman, G. Cadet,
  "Piezoelectric Materials for Powering Remote
  Sensors," IEEE-IPCCC-2005, Phoenix, AZ, 2005.
• M.J. Holtzman, B.P. Johnson, L. Lautzenhiser, "A
  Digital Integrator for an S-band High-Speed
  Frequency-Hopping Phase-Locked Loop," Proc. 39th
  Annual International Telemetering Conf., Las
  Vegas, NV, 2003.
• M.J. Holtzman, M.S. Fadali, B.P.Johnson, L.
  Lautzenhiser, "Robust Stability Analysis of a
  Phase-Locked Loop Voltage-Controlled Oscillator
  Circuit," Proc. American Control Conf., San
  Diego, CA, 1999.
• B.P. Johnson, B.A. Lautzenhiser, M.J. Holtzman,
  L. Lautzenhiser, "Overcoming Traditional High
  Frequency Phase-Locked Loop Synthesizer
  Limitations," Proc. 7th International Symposium
  on Recent Advances in Microwave Technology,
  Malaga, Spain, 1999.
• P.K. Wong, B. Pejcinovic, J.J. Lee, S.T. Hsu,
  "Microwave Testing and Characterization of
  Strained Silicon SOI Technology," IEEE Int.
  Mixed-Signals Testing Workshop, 2004.
• H. Xiao, R. Schaumann, W.R. Daasch, P.K. Wong,
  B. Pejcinovic, "A Radio-Frequency CMOS Active
  Inductor and Its Application in Designing High-Q
  Filters," Proc. IEEE Int. Symposium on Circuits
  and Systems, 2004.
• V. Ceperic, A. Baric, B. Pejcinovic, "Artificial
  Neural Network in Modeling of Voltage Controlled
  Oscillators With Jitter," Proc. IEEE MELECON,
  2004.
• E. Sijercic, K. Mueller, B. Pejcinovic,
  "Simulation of the Exclusion/Extraction InSb
  MOSFETs," IEEE Workshop on Microelectronics and
  Electron Devices, 2004.
• J. Castelino, P. Wong, E. Sijercic, B.
  Pejcinovic, A. Baric, "Comparison of non-linear
  MESFET models over 1-12 GHz range," IEEE ICECS,
  2003.