PHY 5660: Semiconductor Physics and Devices

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PHY 5660 Semiconductor Physics and Devices
Total of 39 hours Lectures
Task nature Description Weight
Homework Projects Presentation Solving about 15 problems related to the course materials to strengthen students understanding. Two projects in reviewing particular applications of semiconductor physics, aimed for strengthening students ability in literature search and scientific writing One survey with presentations 40 50 10
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References

• M. Balkanski and R. F. Wallis, Semiconductor
  physics and applications, Oxford University Press
  (Oxford, 2000). QC611.B185 2000
• Peter Y. Yu, M. Cardona, Fundamentals of
  semiconductors, Springer (Berlin, 2005)  QC611
  .Y88 2005
• S. M. Sze (ed.), Modern semiconductor device
  physics, John Wiley Sons, Inc. (New York, 1998)
  QC611.M674 1998
• C. Weisbuch, B. Vinter, Quantum semiconductor
  structures, Academic Press, Inc. (Boston, 1991)
  QC611.W38
• K. Seeger, Semiconductor physics, Springer
  (Berlin, 1999) QC611.S43 1999
• H. T. Grahn, Introduction to semiconductor
  physics, World Scientific (Singapore, 1999)
  QC611.G73 1999
• R. Enderlein, N. J. M. Horing, Fundamentals of
  semiconductor physics and devices, World
  Scientific (Singapore, 1997) QC611.E655 1997
• S.M. Sze K. K. Ng, Physics of semiconductor
  devices, 2007, QC612.S4.S95 2007

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Chapter 1 Structures of semiconductors
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What do you know about a semiconductor?

• Resistivity is between a metal and an insulator

• Resistivity decreases with temperature, vs,
• resistivity of metal increases with temperature

• Photoconductivity light illumination increases
  conductivity

• Rectifier it conducts when forward biased in
  p-n
• diode and Schottky diode

• Transistor discovered by Bardeen and Brattain

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Inventors of the transistor William Shockley
(seated), John Bardeen (left) and Walter H.
Brattein (right) in 1948. They received the
Nobel Prize in Physics in 1956.
The first point-contact transistor invented in
1947.
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Review Structure of Solid
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Lattice
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Common structures and chemical bonding of
semiconductors
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Diamond Structure
Group IV elements such as Si and Ge
Two interpenetrating fcc structures displaced
with respect to each other along (111) direction
by one quarter the body diagonal of the elemental
cube
The basis two atoms locate at (0,0,0) and
(1/4,1/4,1/4,)a
The hard sphere filling factor is only 0.34
Simple fcc is 0.74. There are 4 first nearest
neighbors ? second nearest neighbors
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Zincblende Structure
III-V semiconductor such as GaAs and InSb
Two fcc structures displaced with respect to each
other along (111) direction by one quarter the
body diagonal of the elemental cube
The basis two atoms locate at (0,0,0) and
(1/4,1/4,1/4,)a
The hard sphere filling factor is only 0.34
? Simple fcc is 0.74. There are 4 first nearest
neighbors ? second nearest neighbors
Ga (1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p) As
(1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p)3
How to construct sp3 orbitals?
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Wurtzite Structure
II-V semiconductor such as CdS
Cd (1s)2(2s)2(2p)6(3s)2(3p)6(4s)2(4p)6(5s)2 S
(1s)2(2s)2(2p)6(3s)2(3p)4
How to construct sp3 orbitals?