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Pixel Electronics slides for UCSC

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Pixel Electronics s for UCSC Cover 0.13 FE chip ROD Other Activities (except DC-DC) Progress in FY07 Epilogue from 2004 test chip Preamp chip submission ... – PowerPoint PPT presentation

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Title: Pixel Electronics slides for UCSC


1
Pixel Electronics slides for UCSC
  • Cover 0.13 FE chip
  • ROD
  • Other Activities (except DC-DC)

2
Progress in FY07
  • Epilogue from 2004 test chip
  • Preamp chip submission testing
  • Workshop at CERN
  • Work-plan for full size chip submission
  • Includes non-US manpower
  • CPPM
  • Bonn
  • Genova
  • US to focus on unique capabilities
  • Analog design
  • Architecture
  • Full chip integration

3
2004 test chip epilogue
  • CPPM has prepared an SEU measurement setup using
    the LBNL 2004 0.13um test chip.
  • They are irradiating with 20GeV protons at CERN
    right now to extend the studies done at the LBNL
    88 cyclotron in FY06.
  • LBNL simply provided test boards, a few chips,
    and advice, but we are getting a great deal in
    return
  • More on collaboration with European institutes
    later

4
Analog test chip submitted Feb. 07
  • 130nm bulk CMOS
  • 840 pixels complete with threshold and bias
    registers.
  • 2 basic charge-integrating amplifier designs
  • resistor continuous reset.
  • current source continuous reset.
  • nominal current 22mA/pixel
  • Goal for final chip is 10mA/pixel
  • Simulated ENC 200e- for 400fF input load and
    20ns peaking time
  • Exact value depends on many tunable parameters

3.6mm
2.8mm
5
Analog test chip plans
  • Expected chip delivery late May
  • Test board in fabrication now
  • Initial checkout by Abder at LBNL
  • Distribution of chips to other test efforts in
    June/July
  • Interest from European collaborators to
    participate in testing
  • Some irradiation possible in FY07, but mainly in
    08
  • Hope that European colleagues will set up
    irradiation tests in FY08- no project fund
    request for this.
  • Note that all transistors are linear (with guard
    rings around Nmos)
  • Critical initial measurements expected
  • Threshold dispersion
  • Uniformity across array. Operating margin.
  • Current consumption, noise and timewalk

6
Pixel Upgrade Electronics Workshop
  • Held on March 22 at CERN following ATLAS-CMS
    Electronics (ACES) workshop. http//indico.cern.ch
    /conferenceDisplay.py?confId13957
  • 7 electical engineers not presently involved in
    pixels attended this meeting
  • CPPM, Bonn, Nikef, Genova
  • Clearly there is interest
  • Work Plan drafted in April to foster efficient
    collaboration
  • First global chip designers pone meeting to go
    over this plan isnext week

7
Plans for FY08
  • Work-plan milestones
  • Architecture definition September 2007
  • Initial Design review January 2008
  • Final Design review September 2008
  • First full size chip submission December 2008
  • LBNL engineering manpower
  • 100 Abder Mekkaoui Lead IC designer, analog
    front end, integration
  • 40 Dario Gnani IC designer, High level
    description, readout logic
  • 30 George Chao Pad frame
  • 10 Peter Denes Organization, pads. (no cost to
    project)
  • LBNL purchases/fabrications
  • Assume a second iteration of front end design (if
    nothing else to fine tune lower current
    modifications) 65K including test board.

8
FY09
  • Continue same level of design effort until
    submission
  • For Dec. submission this is 25 of FY08 manpower
    cost
  • Reduced effort still needed after submission in
    FY09 for simulation and testing
  • Take 50 of FY08 cost for remaining 75 of FY09
  • Finally need to cover test board design (based on
    existing TPLL) and fabrication
  • EE, drafter, and board fab cost.
  • Student-like personnel to operate test setup
  • Cost of engineering run to be paid out of BL
    replacement ATLAS project, which is MO-B with
    the usual sharing.
  • 20 of 400K

9
LBNL FE chip Cost breakdown FY08-09
10
Chip Requirements
Pixel size 50 x 250 mm2
Bump pad diameter 12 mm
Input DC-coupled negative polarity
Normal pixel input capacitance range 300-500 fF
Long pixel input capacitance range 450-700 fF
In-time threshold with 20ns gate 4000 e
Two-hit time resolution 400 ns
DC leakage current tolerance 100 nA
Single channel ENC sigma (400fF) 300 e
Tuned threshold dispersion 100 e
Analog supply current/pixel _at_400fF 10 mA
Radiation tolerance 200 MRad
Average hit rate 200 MHz/cm2
Acquisition mode Data driven with time stamp
Time stamp precision 8 bits
Readout initiation Trigger command
Max. number of continuous triggers 16
Trigger latency 3.2 ms
Single chip data output rate 160 Mb/s
Very difficult. Critical for power distribution
and material
High luminosity and small radius. Wants new ROD
Low value given by planar sensors and high
value by 3D.
11
ROD development
  • ROD total bandwidth limited by output s-Link at
    1.28Gb/s.
  • This is only enough for 8 chips at 160Mb/s each.
  • This would have to fed into the ROD on 32 40Mb/s
    inputs.
  • To read out a single R4cm layer would need 94
    RODs!
  • It would be much cheaper and reliable to build
    fewer new, faster RODs using modern components
  • Can keep the basic data flow architecture, but
    simply implement within new FPGA.
  • This is NOT yet an urgent need. Could in
    principle start in FY09 instead of FY08, but
  • There is available manpower in FY08
  • Early design would feed-back into chip I/O
    architecture, leading to a better system
  • There is synergy with PLL-based test setup needs

12
ROD PLL test setup
  • Interface definition is common to ROD and PLL
    test setup work, and is needed for chip
    architecture design.
  • Expertise at LBNL is common to ROD and PLL test
    setup (same people)
  • FY08 Tasks to be covered in the ROD/PLL area are
  • Interface definition
  • Schematic layout of revised PLL test card
  • Initial look at new generation candidate FPGA for
    replacement ROD.
  • FY08 requested resources (split between chip and
    ROD)
  • 0.2 FTE under 4.1.2.1
  • 0.083 FTE under ROD
  • 10K MS under ROD (Xilinix evaluation boards)
  • FY09 requested resources (split between chip and
    ROD)
  • 0.53 FTE under 4.1.2.1 (includes PLL test card
    layout fab)
  • 0.3 FTE under ROD (prototype BOC and ROD design)
  • 30K MS under 4.1.2.1 (PLL test card fab)

13
LBNL ROD Cost breakdown FY08-09
14
Other LBNL activities
  • Progress in FY07 in
  • 3D sensor testing and
  • Nanowire carpet hybrid pixel development
  • 3D sensor testing
  • Minor involvement but very positive impact
  • Established characterization setup at CERN
    enabling test work by U. of Oslo
  • Provided test boards and debugging help
  • Results from this work used to specify load
    requirement on new 130nm amplifier.
  • Will need to increase involvement in FY09 once
    first 130nm full chip is available
  • Note request for tester support in FY09 4.1.2.1.

15
Nanowire carpet hybrid pixelsW. Kim (molecular
foundry), C. Tindall (eng.), H. Spieler (phys.),
M. Garcia-Sciveres (phys.), and brand new
addition CERN Medipix group
Concept shown at UCSC upgrade meeting Nov. 2005
2007 Realized implementation
16
Nanowire carpet hybrid pixels (cont.)
  • Funding sources so far
  • LBNL molecular foundry (FY06)
  • LBNL LDRD surplus (FY06)
  • ATLAS project RD 0.07FTE (FY07)
  • No explicit ATLAS RD request for FY08

Diode behavior of NW carpet sample fabricated by
C. Tindall in FY07
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