Mg2NiH4 thin films synthesis results

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• Mg2NiH4 thin films synthesis results

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Main goals

• hydrogenation of Mg2Ni thin films in high
  hydrogen pressure and temperature (p,T)
• analysis of Mg2Ni films after hydrogenation (p,T)
  using XRD and SEM methods.

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Parameters of hydrogenation

• Pressure 8 bar
• Temperature 180 - 250 C
• Hydrogenation duration 1 hours

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Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of of Mg2Ni film after
hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
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Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of of Mg2Ni film after
hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
6
Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of of Mg2Ni film after
hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
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Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of Mg2Ni film after hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
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Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of Mg2Ni film after hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
9
Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of Mg2Ni film after hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
10
Mg2Ni films after plasma hydrogenation (p,T)
SEM micrograph of Mg2Ni film after hydrogenation
XRD diffractogram of Mg2Ni film after
hydrogenation
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Conclusions

• 1-4 µm nanocrystalline Mg2Ni thin film was
  successfully formatted using magnetron
  sputtering
• After the hydrogenation of Mg2Ni thin films in
  hydrogen atmosphere, in high pressure and high
  temperature, Mg2NiH4 thin films were successfully
  formed.
• SEM analysis shows that after hydrogenation
  formation of the bubbles in the Mg2NiH4 thin
  films are observed.