JRA1: Lithography Limits for Nanophotonic Devices

1
JRA1 Lithography Limits for Nanophotonic Devices
Liam OFaolain1, David OBrien1, Giuseppe
Pagnotta1,8, Thomas F Krauss1, Franck Robin2,
Robert Wueest2, Douglas McIntyre3, Stephen
Thoms3, Harald Chong3, Richard De La Rue3, Fouad
Karouta4, Guido Piazenski5 , Wim Bogaerts6 ,
Xiaodong Yuan7

• 1 School of Physics and Astronomy, University of
  St Andrews, North Haugh, St Andrews, Fife,
  Scotland.
• 2 Communication Photonics Group, Electronics
  Laboratory, ETH Zurich, Gloriastrasse 35, CH-8092
  Zurich, Switzerland.
• 3 Dept. of Electronics Electrical Engineering,
  University of Glasgow, Rankine Building, Oakfield
  Avenue, Glasgow, G12 8LT, Scotland.
• 4 COBRA Research Institute, TU Eindhoven,
  PT-10.28, NL-5600MB Eindhoven, Netherlands.
• 5 Raith GmbH, Hauert 18, D-44227 Dortmund.
• 6 Ghent University IMEC, Dept. of Information
  Technology (INTEC), Sint-Pietersnieuwstraat 41,
  9000 Gent, Belgium.
• 7 School of Optical Engineering, National
  University of Defense Technology, Changsha,
  Hunan, China.
• 8 Politecnico di Torino, C.so Duca degli Abruzzi
  24, 10129 Turin, Italy.

TA-B(xC)2
Fitting the above formula to the data allows the
extraction of a number of important parameters,
A- coupling, B- dependence on disorder, C-
intrinsic positional disorder. At low levels of
disorder, coupling remains the most important
factor (can be seen as the intercepts, above). A
examination of the dependence of B on group
velocity shows a slightly sublinear dependence
(important as previous reports have suggested a
1/vg2 dependence). The parameter C gives a
measure of the positioning disorder introduced by
the electron beam writer (LEO/RAITH hybrid). This
was zero within the measurement error of 0.5nm.
This shows that beam drift and writefield
distortion only create non random variations and
do not result in appreciable disorder (though the
variations may be significant for other reasons).