Title: Snmek 1
1Relaxation of Structural Units in MD Simulated
Silicate Glasses
Jan Machácek, Ondrej Gedeon Institute of
Chemical Technology, Technická 5, Prague, CZ-166
28, Czech Republic, Jan.Machacek_at_vscht.cz Marek
Lika Vitrum Laugaricio - Joint Glass Center of
Institute of Inorganic Chemistry SAS, Alexander
Dubcek University of Trencín and RONA Lednické
Rovne, tudentská 2, Trencín, SK-911 50,Slovak
Republic
2Introduction
- Structure of silicate glass - described by
Q-species - Si4n - NMR, Raman spectroscopy
- Unusual coordination of silicon, high-pressure
systems - CRD(Si) 5, 6
- Si55 - evidence from MAS-NMR /Stebbins 1988/
- high pressure
- high cooling rates
- binary potassium silicate
- 20 mol alkali oxide
- Role of Si55 in diffusion of alkalis? /Farnan
1998/ - intermediate in diffusion mechanism of oxygen ?
- Presence of Si55 in MD glasses
- pair-wise potentials
- caused by rapid cooling rates
- maximum of Si5n 20 mol Na2O
3Introduction
Na
Na
Na
/Farnan 1998/
4Aim of this all
- Exploration of behaviour of Simn units (m is
O n is BO) - at various temperatures (1000K - 2500K)
- Description of reactions or mutual
- transformations Simn ? Sikl
- Tracing of decay of initial number
- of various Simn in time
- Discussion of such decay in term of ionic
migration
5Some computational details
- MD simulation, DL_POLY program /Smith 1995/
- Na2O2SiO2 glass, 1494 atoms
- Pair-wise potential
- LR Coulombic SR Buckingham /van Beest 1990,
Yuan 2001/ - (A) Preparation of MD glass
- cooling from random configuration at 5000 K down
to 300 K, - total time 960 ps
- configurations from 1000 K to 2500 K collected
every 100 K - (B) Tracing of Simn units for one temperature
value - NVE ensemble, system relaxed
- 50 ps run
- atom positions collected every 0.01 ps into
HISTORY file - cut-off for NBO(BO) identification 2.46 Å
- determination of Simn units
- summation of coordination changes Simn ?
Sikl
6Results and Discussion
- Most frequent Simn?Sikl reactions
- Chem. equilibrium, temperature 2500 K
- Red numbers absolute number of
- transformations per 1 ps
- Vertical lines BO ? NBO conversions
- Horizontal lines changes in Si
- coordination
- Diagonal line addition/subtraction of
- oxygen (NBO is formed) less
- probable, non-elementary
- Most frequent are 55 ? 44, 54 ? 43 transitions
- At lower temperatures Si6n and Si53 units
vanish
7Results and Discussion
Decay of Si43 units at various temperatures.
Newly generated units during a simulation run are
not included in the curves.
8Results and Discussion
- Decay curves cannot be described by a simple
exponential decay - We assume two decay processes with different
reaction rates
- A is norm. number of Simn, k1 and k2 are
kinetic constants of fast and slow processes ? - Half time of decay of Simn unit is defined by
eq. ti ln(2) / ki - Temperature dependence of ti reveals two
processes ? - Fast - can be attributed to fast moves or
thermal vibrations of oxygen atoms crossing
cut-off distance 2.46 Å - Slow - dominates at lower temperatures,
Arrhenian fit of t2(T) dependence gives energy
barrier of 0.69 eV (close to Eact for diffusion
in Na-disilicate glass)
9Results and Discussion
Temperature dependence of half times of decay of
Si43 units. The inset demonstrates the
superposition of two processes fast - dominating
the beginning of the decay, and slow -
determining decay after the fast process is
exhausted.
10Conclusions
- Analysis of glass structure in terms of Simn
units was performed - Elemental transformations comprise only the
addition/subtraction of BO and the interchanges
between NBO and BO - Decay of Si43 units can be decomposed into
two processes - fast was attributed to the vibration of atoms
(mainly oxygen) - slow revealed the Arrhenius temperature
dependence with an energetic barrier of 0.69 eV
and was attributed to the ionic migration. - Acknowledgements
- This work was supported by the Slovak Grant
Agency for Science through the grant No.1/0218/03
and by the Grant Agency of the Czech Republic
through the grant No 104/03/0976. It was alsoa
part of the research project CEZ MSM 223100002
Preparation and properties of advanced materials
- modelling, characterization, and technology.