Title: CMOS PA provides a path to continued system enhancements through further integration
1ISSCC 2008 Any semiconductor component which
can be implemented in CMOS will be implemented in
CMOS
- CMOS PA provides a path to continued system
enhancements through further integration
Donald McClymont February 2008
2Overview of Presentation
- Cellular market and associated cost pressures
- The drive to CMOS utilization
- CMOS PA
- Further integration possibilities
- Conclusion
3Market Size
Greater than 1 billion units and growing
Source, Strategy Analytics, Axiom
4 Cost Pressures
- Increase in market size is driven to a large
extent by the Ultra Low Cost market - Emerging economies
- Basic telephony requirements only
- Cost of ownership is key to expanding the market
5Drive to CMOS
- Transceiver has been converted from BiCMOS to
CMOS in the last years - Many technological problems were overcome
- Examples
- It was thought that 1/f noise made direct
conversion receivers impossible - Low phase noise VCOs were developed
6Cost Argument
- If digital content is low, it can be argued that
an older process technology with Bipolar
extensions may be lower cost than a CMOS process
of finer geometry - But smaller geometries catch up eventually
economies of scale - Advantage can be taken of digital heavy
architectures
7CMOS PA
8Axiom CMOS PA
- The PA had remained a bastion of specialty
technology - Currently represents an increasing proportion of
the RF BOM - CMOS PA offers a significant cost reduction
- The CMOS PA is now a reality
- Axiom AX502 quad band GPRS PA
- Shipped 10m units in first year of production
- Volume growing steadily
9Axiom AX502 GPRS Power Amplifier
DCS/PCS Output
DCS/PCS Input
- Quad band GSM/GPRS PA
- Fully integrated power control
- Superior Reliability
RF Detector
Power Control
BS
TXEN
VRAMP
RF Detector
Full technical presentation will be made later
this week
EGSM/850 Input
EGSM/850 Output
10Axioms Single-Chip CMOS PA Compared to GaAs PA
Modules
SINGLE DIE ADVANTAGE
Typical Module-based PA
CMOS PA
Quad-Band GSM/GPRS
- Many off-chip passive components
- Expensive laminate packaging
- Proprietary GaAs process
- No external components
- Standard 5x5mm package
- Mainstream Silicon CMOS
11Breakdown Issues
- Voltage breakdown is a key issue to solve in ANY
power amplifier - Especially problematic when using standard CMOS
- Output voltage swing exceeds 20V at maximum
output power for the GSM case - Breakdown of a 0.13u core transistor is 3V
- An impedance transformation provides the core of
the solution - Other circuit techniques must be employed to
further enhance reliability - Design must demonstrate full compliance with
foundry design rules
12LC Match vs Magnetic Transformer
Resonant Match
Transformer Match
Inductor Stored Energy 49 VA
Inductor Stored Energy 7 VA
Transformer stored energy less than LC match
Transformer can have lower Q
13Transformer Match versus Resonant Match
- High Transformation ratio is required to
accommodate the low drain voltage of the CMOS
transistor - The higher the transformation ratio, the higher
the energy stored in the matching network - Higher stored energy in resonant match makes the
Q extremely high - A transformer offers a lower Q match which makes
it possible to cover multiple bands while
maintaining a high impedance transformation ratio
14Output Match Integration DAT
- GSM power into 50O output
- - Transformation ratio 18
- - Drain impedance 6 O
- - Power combining 8
- - Equivalent impedance ratio
- from the drains to the output 164
- Equivalent drain impedance 0.8 O
- Passive Efficiency
85 (0.7dB)
Active transformer topology
15Current Consumption in a Phone
16Further Integration Possibilities
17Advantages of Further Integration
- Interface Optimization
- Opportunities to employ more complex systems to
enhance performance and reduce cost - More sensors and more actuators to feed control
loops
18Interface Optimization 1 PA/Transceiver
- Traditionally transceivers are single ended
outputs to support single ended PA input - Transceiver would prefer to be differential
(harmonic generation, noise) - Having PA input differential reduces current
consumption of buffer
19Interface Optimization 2 PA/Switch
- Customer generally drives vendors to margin stack
20Interface Optimization 2 PA/Switch
- Antenna spec for harmonic suppression is -30dBm
- PA may be specified with -16dBm harmonic
generation, switch module with 30dB of harmonic
rejection gt provides -46dBm at antenna - A combined device may be specified with -36dBm
which is more than enough margin - Margin stacking of filter rejection typically
increases insertion loss, which means that the PA
must produce more power - gt Higher current consumption
21Advantages of Further Integration
- Interface Optimization
- Opportunities to employ more complex systems to
enhance performance and reduce cost - More sensors and more actuators to feed control
loops
22Increased complexity 1 Sensors
- In power control having multiple measurement
points may aid in power setting accuracy and
immunity to load variations - Addition of multiple measurement points is
significantly easier in monolithic
implementations - Saves pins etc.
23Increased complexity 2 Actuation points
- Control PA bias to set power levels
- Control VCO bias to save current at lower power
levels where drive power may not be required
24Increased Complexity why is it useful ?
- Example Polar transmit architectures
- Main goal is to linearize a saturated power
amplifier - Both AM/AM and AM/PM response
- Pre-distortion architectures are simple, but
depend on characterization of PA block and
extensive production calibration - Feedback provides more immunity to process
variation - More feedback points can lead to a more accurate
linearization - Better RF performance
- Lower production calibration time
25Whats our target ?
- Typical 3G Front End
- 5 PAs
- 1P9T switch
- 3 Duplexers
- 4 SAW filters
- Comes back to cost
- How do we replicate the cost curve of GSM ?
26Conclusion
- Our challenge as an industry is to continue to
innovate to integrate impossible blocks in CMOS
27Thank You
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