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Laser-assisted Silicon Substrate Cleaning for UHV Systems

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Removement of organic impurities and silicon oxide at T 700 C. The answer: Removement of organics at room temperature and. Significant reduction of SiO2 at T ... – PowerPoint PPT presentation

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Title: Laser-assisted Silicon Substrate Cleaning for UHV Systems


1
Laser-assisted Silicon Substrate Cleaning for UHV
Systems
A. Assmuth, J. Bock, U. Abelein, T. Sulima, I.
Eisele
  • The question
  • Low tempterature (LT) wafer cleaning processes?
  • Removement of organic impurities and silicon
    oxide at T lt 700C
  • The answer
  • Removement of organics at room temperature and
  • Significant reduction of SiO2 at T lt 450 C
  • By laser-assisted chemical processing with
    reactive gases.
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