SEMICONDUCTOR DEVICE FABRICATION

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SEMICONDUCTOR DEVICE FABRICATION

• AN OVERVIEW
• Presented to
• ECE 1001
• 25 September 2001
• by
• Stan Burns
• sburns_at_d.umn.edu
• 271 MWAH

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OUTLINE

• What is a Monolithic Integrated Circuit (IC)?
• Dimensions
• State-of-the-art in size and density
• Materials
• Basic process sequence
• Photolithography
• Define some key terms
• Typical Device Cross-Sections
• Packaging
• ECE Student Challenges in the Semiconductor
  Industry

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• Stanley G. Burns
• UMD-ECE

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DIMENSIONS AND UNITS

• 1 micrometer (1 mm) 10-6m 10-4cm
• 1 Å 10-10m 10-8cm
• 10,000 Å 1 mm
• Wavelength of visible light 0.4 mm(violet) to 0.7
  mm(red) 400 nm to 700 nm, 4,000 Å to
  7,000 Å
• 1 mil 0.001 inch 25.4 mm
• 1 human hair 75 mm to 100 mm
• Atomic spacing in a crystal 3-5 Å
• Fingernail growth rate about 1-3 mm/hour (Not
  personally verified)
• Production ICs minimum feature sizes 0.25 mm
• Aggressive production minimum feature sizes 0.12
  to 0.18 mm
• Research lt 0.1 mm

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BASIC PROCESSING STEPSRepeated Application Of

• Oxidation
• Nitridation
• Photolithography
• Wet Etching (Chemical)
• Dry Etching (Plasma)
• Diffusion
• Evaporation
• Sputtering
• Plasma Assisted Deposition
• Ion Implantation
• Epitaxy
• Many Processing Steps are at temperatures to
  1200C

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ECE Student Challenges in the Semiconductor
Industry

• Design complexity
• Device design
• Device modeling
• Circuit/system simulations
• Testability
• Materials
• How small?
• How large?
• Speed and performance, for analog, digital and
  mixed-mode applications

• Increased functionality Optoelectronic
  integration
• Non-traditional substrates
• Packaging
• Process development
• Process Control
• Tool and plant design
• Cradle to grave waste handling