Phasechange random access memory: A scalable technology

1
Phase-change random access memory A scalable
technology

• S. Raoux, G.W. Burr, M.J. Breitwisch, C.T.
  Rettner, Y.-C. Chen, R.M. Shelby, M. Salinga, D.
  Krebs, S.-H. Chen, H.-L. Lung, C.H. Lam
• Presentation by
• Ioannis Papadopoulos
• ipapadop_at_cse.tamu.edu

2
Phase-Change Memory Overview

• Phase Change Memory (PCRAM) is based on
  phase-change materials
• At least two phases with completely different
  properties
• In the case of PCRAM, electrical conductivity
  differs at least 5 orders of magnitude between
  the two states
• Crystallized phase (SET) logical 1 (low
  resistance)
• Amorphous phase (RESET) logical 0 (high
  resistance)
• Change from SET to RESET short, powerful current
  pulse
• Change from RESET to SET longer, less powerful
  pulse
• Read short, weak pulse

3
"Problems" with PCRAM

• Compared to Flash Memory
• Higher longetivity
• Longer data retention
• Significant investments to flash-memory research
  and production
• Flash memory works, PCRAM also works
• But it is known that the former scales
• How much can PCRAM scale?
• Manufacturers need to be convinced to change
  their production lines
• Scaling has to be there for later generations as
  well

4
Paper Results

• It is not a research-presentation paper
• It is a paper trying to prove through other
  papers that
• PCRAM scales
• Is highly intergratable
• The authors attempt to convince manufacturers and
  investors that
• PCRAM research can lead to competitive products
• PCRAM is as good, if not better, compared to
  Flash-Memory