Fabrication of Largearea Ultrafine Periodic Nanostructures with Multilayer Processing - PowerPoint PPT Presentation

1 / 11
About This Presentation
Title:

Fabrication of Largearea Ultrafine Periodic Nanostructures with Multilayer Processing

Description:

Fabrication of Large-area Ultra-fine Periodic Nanostructures with ... Trim resist lines with isotropic etch (PE). Simulate efficiency vs phase offset. ... – PowerPoint PPT presentation

Number of Views:28
Avg rating:3.0/5.0
Slides: 12
Provided by: chic3
Category:

less

Transcript and Presenter's Notes

Title: Fabrication of Largearea Ultrafine Periodic Nanostructures with Multilayer Processing


1
Fabrication of Large-area Ultra-fine Periodic
Nanostructures with Multilayer Processing
  • Chih-Hao Chang, Yong Zhao, Ralf K. Heilmann,
  • and Mark L. Schattenburg
  • Space Nanotechnology Laboratory

2
Periodic Nanostructures
(Minseung Ahn, SNL)
Magnetic media (2D)
C. A. Ross et al., J. Appl. Phys., 91 (10), 2002
Template for self-assembly (1D)
J. Y. Cheng et al., App. Phys. Lett., 81 (19),
2002
Diffraction grating (1D)
Photonic crystal (3D)
M. Qi et al., Nature, 429, 2002
3
Nanoruler
A small beam makes a small interference pattern,
which is scanned.
4
Overlay Issues
Spatial-phase locked EBL
Align pattern on mask
Nanoruler Reading mode
5
Spatial-frequency Multiplication
Reference layer
Grating layer 1
Grating layer 2
6
Duty-cycle Binary Resist Model
Positive resist
Negative resist
  • Duty cycle gt 0.875 required for 4X.
  • Negative resist desirable, but acid diffusion
    limits duty cycle.
  • Positive resist with image reversal techniques.

7
Image Reversal with Positive Resist
(a) Overexpose positive resist for duty-cycle lt
0.5.
(d) O2 RIE.
(b) Spin silicon-containing polymer.
(d) CHF3 RIE, resulting in duty-cycle gt 0.5.
Si-containing polymer
Resist
(c) CF4 RIE.
  • Material from Molecular Imprint for Nanoimprint.

8
Phase Overlay
0 phase offset
? phase offset
9
Phase Overlay Error Map
  • Auto-imaging with Raith 11x10 images

10
Spatial-frequency Doubling
11
Future work
  • Improve linewidth control
  • Lithography
  • Processing
  • Trim resist lines with isotropic etch (PE).
  • Simulate efficiency vs phase offset.
  • Convert Nanoruler to 200 nm period.
  • Goal 4x exposure at 200 nm to make 50 nm period.
  • Think about 6x 8x.
Write a Comment
User Comments (0)
About PowerShow.com