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Shape Memory Alloy

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below transition temperature, unstrained SMA will have twinned ... Austenite crystalline structure is regained upon heating, returning to its original shape. ... – PowerPoint PPT presentation

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Title: Shape Memory Alloy


1
Shape Memory Alloy
  • Shape memory alloys (SMA) form group of metals
    that recovers particular shape when heated above
    their transformation
  • temperatures.
  • Shape recovery is due to solid-to-solid phase
  • transformation from martensite to austenite.
  • SMA is typically formed above 500700oC
  • where the material exhibits highly ordered
  • austenitic crystalline structure. Upon cooling
  • below transition temperature, unstrained SMA
    will have twinned martensitic structure.
  • SMA deforms easily under stress due to twin
    boundaries propagating throughout the structures
    in
  • the direction of stress.
  • Austenite crystalline structure is regained upon
    heating, returning to its original shape.

2
Shape Memory Alloy (cont.)
  • Stress-strain curve for SMA has non-linearlity
    referred as pseudoelasticity.
  • Pseudoelastic behavior causes SMA to strain up
    to 68!
  • Mechanisms for pseudoelasticity involves either
    twinning or stressed-induced martensitic
    transformation (superelasticity) .
  • Twinning pseudoelasticity caused by formation
    of twins or by motion of twin boundaries.
  • Superelasticity SMA in austentite phase
    seemingly shows plastic deformation that is
    fully recoverable when stress is removed.
    Martensite reverts back to the austenite phase
    providing the shape recovery.

3
Thin Film Shape Memory Alloy
  • Drive to miniaturization forces attention to
    sputter deposited thin film SMA for MEMS
    applications.
  • Sputter deposition is performed in an ultra high
  • vacuum (UHV) system.
  • SMA thin films strongly depend on metallurgical
  • factors and sputtering conditions.
  • Sputtering involves ejection of particles by
    momentum
  • transfer from a SMA target on to a substrate.
  • Ejection of target particles is furnished by ion
  • bombardment using argon gas flow (causes plasma).
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