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Lesson 4:

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Rp,Rn: Ron of respective transistors. N = number of Inputs. Estimation of Gate Delay: ... When FETs in series, the effective W is respectively smaller. ... – PowerPoint PPT presentation

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Title: Lesson 4:


1
Lesson 4 Just like LEGO
  • The NAND gate
  • Reading CMOS gates
  • Designing CMOS gates

2
Logic
3
NAND 2-inputs
Gates areinverters in disguise!
4
NAND 3-inputs
5
NAND 3-inputs
6
NAND Switching Time, Propagation Delay
  • tLow2High Rp/N (NCout,pCout,n/NCload)
  • tHigh2Low NRn (Cout,n/NNCout,pCload)
  • Gate Delay1/2(tL2H tH2L)
  • n,p n-channel, p-channel transistors.
  • Rp,Rn Ron of respective transistors.
  • N number of Inputs.

7
Estimation of Gate Delay
Gate Delay K1(pSec) K2 (pSecum/fF) Cload /
WnWnWidth of n-channel FET (Wp/Wnconstant)K1
K2 determined from spice simulation of cascaded
inverters. Wp/Wn K1 K2 1 39 12.8 2 38 8.78
3 41 6.35 When FETs in series, the effective W
is respectively smaller. Cload calculated from
Fan-out Capacity(per Gate) Capacity of Line.
8
NAND 3-inputs
9
NAND 3-inputs
10
Reading CMOS gates
11
Designing CMOS gates
12
Complex CMOS gates
  • Can a compound gate be arbitrarily complex?
  • NO, propagation delay is a strong function of
    fan-in
  • FO ? Fan-out, number of loads connected to the
    gate
  • 2 gate capacitances per FO interconnect
  • FI ? Fan-in, Number of inputs in the gate
  • Quadratic dependency on FI due to
  • Resistance increase
  • Capacitance increase
  • Avoid large FI gates (Typically FI ? 4)

13
NAND Switching PointVSP(bn /
(Nbp))1/2VT,n(VDD-VT,p)
--------------------------------------1(bn /
(Nbp))1/2 N number of Inputs.n,p
n-channel, p-channel transistors.
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