Second Generation Microbolometer Fabrication Procedure

1
Second Generation Microbolometer Fabrication
Procedure
2
SEM Picture of a 1x10 Microbolometer Array,
Second Generation
3
Measured Responsivity on Second Generation Devices

• Devices voltage biased, atmospheric pressure

4
Measured Detectivity on Second Generation Devices

• Devices voltage biased, atmospheric pressure

5
Measured Responsivity on Second Generation Devices

• Devices voltage biased, in vacuum

6
Measured Detectivity on Second Generation Devices

• Devices voltage biased, in vacuum

7
Measured Current Noise in Second Generation
Devices

• Devices voltage biased, in vacuum

8
Sample Voltage Response Spectrum Across a Series
Resistor

• Devices voltage biased, atmospheric pressure,
• Chopper frequency200 Hz

9
Summary of Performance Characteristics
10
Conclusions

• Thermal conductance has decreased by an order of
  magnitude.
• Thermal capacitance has decreased.
• Time constant is in the order of 4 - 5 ms in
  vacuum, 0.2 - 0.3 ms in air.
• Detectivity is above 108 cm Hz1/2 /W.
• Further improvements can be achieved by using an
  absorber layer, a passivation layer and by
  reducing thermal mass.